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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
UF1506S-B

UF1506S-B

DIODE GEN PURP 800V 1.5A DO41

Diodes Incorporated

6,330 -
UF1506S-B

数据表

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 800 V 1.7 V @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 800 V 20pF @ 4V, 1MHz 1.5A - - Through Hole DO-41 -65°C ~ 150°C
NXPLQSC10650Q

NXPLQSC10650Q

DIODE SIL CARB 650V 10A TO220AC

WeEn Semiconductors

8,476 -
NXPLQSC10650Q

数据表

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 1.85 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 250pF @ 1V, 1MHz 10A - - Through Hole TO-220AC 175°C (Max)
NXPSC04650Q

NXPSC04650Q

DIODE SIL CARB 650V 4A TO220AC

WeEn Semiconductors

5,389 -
NXPSC04650Q

数据表

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 170 µA @ 650 V 130pF @ 1V, 1MHz 4A - - Through Hole TO-220AC 175°C (Max)
NXPSC06650Q

NXPSC06650Q

DIODE SIL CARB 650V 6A TO220AC

WeEn Semiconductors

7,517 -
NXPSC06650Q

数据表

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 190pF @ 1V, 1MHz 6A - - Through Hole TO-220AC 175°C (Max)
NXPSC08650Q

NXPSC08650Q

DIODE SIL CARB 650V 8A TO220AC

WeEn Semiconductors

3,421 -
NXPSC08650Q

数据表

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 230 µA @ 650 V 260pF @ 1V, 1MHz 8A - - Through Hole TO-220AC 175°C (Max)
IDH10G65C5ZXKSA2

IDH10G65C5ZXKSA2

DIODE SCHOTTKY 650V 10A TO220-2

Infineon Technologies

8,552 -
IDH10G65C5ZXKSA2

数据表

* - Tube Obsolete - - - - - - - - - - - - -
STTH30RQ06G2-TR

STTH30RQ06G2-TR

DIODE GEN PURP 600V 30A D2PAK HV

STMicroelectronics

400 -
STTH30RQ06G2-TR

数据表

ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 2.95 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 40 µA @ 600 V - 30A - - Surface Mount D2PAK HV 175°C (Max)
IDH10G65C5ZXKSA1

IDH10G65C5ZXKSA1

DIODE SIL CARB 650V 10A TO220-2

Infineon Technologies

6,500 -
IDH10G65C5ZXKSA1

数据表

CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 650 V 300pF @ 1V, 1MHz 10A - - Through Hole PG-TO220-2 -55°C ~ 175°C
VS-E5TH1512S2L-M3

VS-E5TH1512S2L-M3

DIODE GEN PURP 1.2KV 15A TO263AB

Vishay General Semiconductor - Diodes Division

1,154 -
VS-E5TH1512S2L-M3

数据表

FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 2.5 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 95 ns 50 µA @ 1200 V - 15A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
IDT04S60CHKSA1

IDT04S60CHKSA1

DIODE SCHOTTKY 600V TO220-2

Infineon Technologies

4,843 -
IDT04S60CHKSA1

数据表

- - Tube Obsolete - - - - - - - - - - - - -
RFNL10BGE6STL

RFNL10BGE6STL

DIODE GEN PURP 600V 10A TO252GE

Rohm Semiconductor

2,265 -
RFNL10BGE6STL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 10 µA @ 600 V - 10A - - Surface Mount TO-252GE 150°C
MURHD560W1T4G

MURHD560W1T4G

DIODE GEN PURP 600V 5A DPAK

onsemi

988 -
MURHD560W1T4G

数据表

MEGAHERTZ™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 2.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 600 V - 5A - - Surface Mount DPAK -65°C ~ 175°C
RFNL15TJ6SGC9

RFNL15TJ6SGC9

DIODE GP 600V 15A TO220ACFP

Rohm Semiconductor

388 -
RFNL15TJ6SGC9

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 1.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 160 ns 10 µA @ 600 V - 15A - - Through Hole TO-220ACFP 150°C
VS-E5TX3006THN3

VS-E5TX3006THN3

DIODE GEN PURP 600V 30A TO220AC

Vishay General Semiconductor - Diodes Division

464 -
VS-E5TX3006THN3

数据表

FRED Pt® TO-220-2 Tube Active Standard 600 V 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 41 ns 20 µA @ 600 V - 30A Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 175°C
S3D06065A

S3D06065A

DIODE SIL CARB 650V 6A TO220AC

SMC Diode Solutions

949 -
S3D06065A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 8 µA @ 650 V 382pF @ 0V, 1MHz 6A - - Through Hole TO-220AC (TO-220-2) -55°C ~ 175°C
VS-10ETS08FP-M3

VS-10ETS08FP-M3

DIODE GP 800V 10A TO220-2FP

Vishay General Semiconductor - Diodes Division

879 -
VS-10ETS08FP-M3

数据表

- TO-220-2 Full Pack Tube Active Standard 800 V 1.1 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 800 V - 10A - - Through Hole TO-220-2 Full Pack -40°C ~ 150°C
VS-20ETS12THM3

VS-20ETS12THM3

DIODE GEN PURP 1.2KV 20A TO220AC

Vishay General Semiconductor - Diodes Division

1,498 -
VS-20ETS12THM3

数据表

- TO-220-2 Tube Active Standard 1200 V 1.1 V @ 20 A Standard Recovery >500ns, > 200mA (Io) - 100 µA @ 1200 V - 20A Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 150°C
RF1005TF6SC9

RF1005TF6SC9

DIODE GEN PURP 600V 10A TO220NFM

Rohm Semiconductor

2,163 -
RF1005TF6SC9

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 10 µA @ 600 V - 10A - - Through Hole TO-220NFM 150°C
VS-E5TX2112S2L-M3

VS-E5TX2112S2L-M3

DIODE GEN PURP 1.2KV 20A TO263AB

Vishay General Semiconductor - Diodes Division

1,495 -
VS-E5TX2112S2L-M3

数据表

FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 3.6 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 50 µA @ 1200 V - 20A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
IDK04G65C5XTMA2

IDK04G65C5XTMA2

DIODE SIL CARB 650V 4A TO263-2

Infineon Technologies

803 -
IDK04G65C5XTMA2

数据表

CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.8 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 670 µA @ 650 V 130pF @ 1V, 1MHz 4A - - Surface Mount PG-TO263-2 -55°C ~ 175°C
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