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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
RB075BGE40STL

RB075BGE40STL

DIODE SCHOTTKY 40V 5A TO252GE

Rohm Semiconductor

2,424 -
RB075BGE40STL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 40 V 750 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 40 V - 5A - - Surface Mount TO-252GE 150°C
VS-E5TH2106S2L-M3

VS-E5TH2106S2L-M3

DIODE GEN PURP 600V 20A TO263AB

Vishay General Semiconductor - Diodes Division

1,600 -
VS-E5TH2106S2L-M3

数据表

FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 1.68 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 39 ns 10 µA @ 600 V - 20A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
DURF1060

DURF1060

DIODE GEN PURP 600V 10A ITO220AC

Littelfuse Inc.

11,418 -
DURF1060

数据表

DUR TO-220-2 Full Pack, Isolated Tab Tube Active Standard 600 V 2.2 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 32 ns 10 µA @ 600 V - 10A - - Through Hole ITO-220AC -55°C ~ 150°C
TST30H200CW

TST30H200CW

DIODE SCHOTTKY 200V 15A TO220AB

Taiwan Semiconductor Corporation

1,723 -
TST30H200CW

数据表

- TO-220-3 Tube Not For New Designs Schottky 200 V 920 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 200 V - 15A - - Through Hole TO-220AB -55°C ~ 150°C
STTH15RQ06DY

STTH15RQ06DY

DIODE GEN PURP 600V 15A TO220AC

STMicroelectronics

892 -
STTH15RQ06DY

数据表

- TO-220-2 Tube Active Standard 600 V 2.95 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 20 µA @ 600 V - 15A Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
APT15D120KG

APT15D120KG

DIODE GP 1.2KV 15A TO220

Microchip Technology

255 -
APT15D120KG

数据表

- TO-220-3 Tube Active Standard 1200 V 2.5 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 260 ns 250 µA @ 1200 V - 15A - - Through Hole TO-220 [K] -55°C ~ 175°C
SDUR6060W

SDUR6060W

DIODE GEN PURP 600V 60A TO247AC

SMC Diode Solutions

4,339 -
SDUR6060W

数据表

- TO-247-2 Tube Active Standard 600 V 2 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 µA @ 600 V - 60A - - Through Hole TO-247AC -55°C ~ 150°C
RFN10BGE6STL

RFN10BGE6STL

DIODE GEN PURP 600V 10A TO252GE

Rohm Semiconductor

1,912 -
RFN10BGE6STL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 1.55 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - 10A - - Surface Mount TO-252GE 150°C
VS-30ETU12-M3

VS-30ETU12-M3

DIODE GEN PURP 1.2KV 30A TO220AC

Vishay General Semiconductor - Diodes Division

7,988 -
VS-30ETU12-M3

数据表

FRED Pt® TO-220-2 Tube Active Standard 1200 V 2.68 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 220 ns 145 µA @ 1200 V - 30A - - Through Hole TO-220AC -55°C ~ 175°C
RFUH25TB3SNZC9

RFUH25TB3SNZC9

DIODE GP 350V 20A TO220FN-2

Rohm Semiconductor

781 -
RFUH25TB3SNZC9

数据表

- TO-220-2 Full Pack Tube Active Standard 350 V 1.45 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 350 V - 20A - - Through Hole TO-220FN-2 150°C
S3D03065E

S3D03065E

DIODE SIL CARBIDE 650V 3A DPAK

SMC Diode Solutions

735 -
S3D03065E

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 3 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 650 V 179pF @ 0V, 1MHz 3A - - Surface Mount DPAK -55°C ~ 175°C
RFUH10TF6SFHC9

RFUH10TF6SFHC9

DIODE GEN PURP 600V 10A TO220NFM

Rohm Semiconductor

406 -
RFUH10TF6SFHC9

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 2.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 600 V - 10A Automotive AEC-Q101 Through Hole TO-220NFM 150°C (Max)
RF505TF6SFHC9

RF505TF6SFHC9

DIODE GEN PURP 600V 5A TO220NFM

Rohm Semiconductor

918 -
RF505TF6SFHC9

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 1.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 600 V - 5A Automotive AEC-Q101 Through Hole TO-220NFM 150°C (Max)
FESF16DT-E3/45

FESF16DT-E3/45

DIODE GEN PURP 200V 16A ITO220AC

Vishay General Semiconductor - Diodes Division

451 -
FESF16DT-E3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 200 V 975 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - 16A - - Through Hole ITO-220AC -65°C ~ 150°C
CUDD8-02 TR13 PBFREE

CUDD8-02 TR13 PBFREE

DIODE GEN PURP 200V 8A D2PAK

Central Semiconductor Corp

306 -
CUDD8-02 TR13 PBFREE

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 200 V 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 5 µA @ 200 V 80pF @ 4V, 1MHz 8A - - Surface Mount D2PAK -65°C ~ 150°C
RFV12TG6SGC9

RFV12TG6SGC9

DIODE GP 600V 12A TO220ACFP

Rohm Semiconductor

925 -
RFV12TG6SGC9

数据表

- TO-220-2 Tube Active Standard 600 V 2.8 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 10 µA @ 600 V - 12A - - Through Hole TO-220ACFP 150°C (Max)
SJPA-L3V

SJPA-L3V

DIODE SCHOTTKY 30V 3A SJP

Sanken Electric USA Inc.

4,116 -
SJPA-L3V

数据表

- 2-SMD, J-Lead Tape & Reel (TR) Active Schottky 30 V 360 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 4.5 mA @ 30 V - 3A - - Surface Mount SJP -40°C ~ 125°C
SJPB-L4V

SJPB-L4V

DIODE SCHOTTKY 40V 3A SJP

Sanken Electric USA Inc.

5,293 -
SJPB-L4V

数据表

- 2-SMD, J-Lead Tape & Reel (TR) Active Schottky 40 V 550 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 40 V - 3A - - Surface Mount SJP -40°C ~ 150°C
SJPB-L6V

SJPB-L6V

DIODE SCHOTTKY 60V 3A SJP

Sanken Electric USA Inc.

4,118 -
SJPB-L6V

数据表

- 2-SMD, J-Lead Tape & Reel (TR) Active Schottky 60 V 700 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 60 V - 3A - - Surface Mount SJP -40°C ~ 150°C
SJPE-H4V

SJPE-H4V

DIODE SCHOTTKY 40V 2A SJP

Sanken Electric USA Inc.

2,709 -
SJPE-H4V

数据表

- 2-SMD, J-Lead Tape & Reel (TR) Active Schottky 40 V 600 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 40 V - 2A - - Surface Mount SJP -40°C ~ 150°C
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