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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SD840-B

SD840-B

DIODE SCHOTTKY 40V 8A DO201AD

Diodes Incorporated

3,664 -
SD840-B

数据表

- DO-201AD, Axial Bulk Obsolete Schottky 40 V 700 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 40 V 550pF @ 4V, 1MHz 8A - - Through Hole DO-201AD -65°C ~ 150°C
SD860-B

SD860-B

DIODE SCHOTTKY 60V 8A DO201AD

Diodes Incorporated

8,227 -
SD860-B

数据表

- DO-201AD, Axial Bulk Obsolete Schottky 60 V 700 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 60 V 550pF @ 4V, 1MHz 8A - - Through Hole DO-201AD -65°C ~ 150°C
SD940-B

SD940-B

DIODE SCHOTTKY 40V 9A DO201AD

Diodes Incorporated

4,144 -
SD940-B

数据表

- DO-201AD, Axial Bulk Obsolete Schottky 40 V 570 mV @ 18 A Fast Recovery =< 500ns, > 200mA (Io) - 800 µA @ 40 V 900pF @ 4V, 1MHz 9A - - Through Hole DO-201AD -65°C ~ 150°C
SD945-B

SD945-B

DIODE SCHOTTKY 45V 9A DO201AD

Diodes Incorporated

2,039 -
SD945-B

数据表

- DO-201AD, Axial Bulk Obsolete Schottky 45 V 570 mV @ 18 A Fast Recovery =< 500ns, > 200mA (Io) - 800 µA @ 45 V 900pF @ 4V, 1MHz 9A - - Through Hole DO-201AD -65°C ~ 150°C
SF10AG-B

SF10AG-B

DIODE GEN PURP 50V 1A DO41

Diodes Incorporated

3,766 -
SF10AG-B

数据表

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 50 V 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 50 V 75pF @ 4V, 1MHz 1A - - Through Hole DO-41 -65°C ~ 150°C
SF10BG-B

SF10BG-B

DIODE GEN PURP 100V 1A DO41

Diodes Incorporated

2,712 -
SF10BG-B

数据表

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 100 V 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 100 V 75pF @ 4V, 1MHz 1A - - Through Hole DO-41 -65°C ~ 150°C
SF10DG-B

SF10DG-B

DIODE GEN PURP 200V 1A DO41

Diodes Incorporated

8,264 -
SF10DG-B

数据表

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 200 V 950 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 75pF @ 4V, 1MHz 1A - - Through Hole DO-41 -65°C ~ 150°C
SF10FG-B

SF10FG-B

DIODE GEN PURP 300V 1A DO41

Diodes Incorporated

7,185 -
SF10FG-B

数据表

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 300 V 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 10 µA @ 300 V 75pF @ 4V, 1MHz 1A - - Through Hole DO-41 -65°C ~ 150°C
SF10GG-B

SF10GG-B

DIODE GEN PURP 400V 1A DO41

Diodes Incorporated

9,132 -
SF10GG-B

数据表

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 400 V 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 10 µA @ 400 V 75pF @ 4V, 1MHz 1A - - Through Hole DO-41 -65°C ~ 150°C
MSE1PBHM3/I

MSE1PBHM3/I

DIODE GEN PURP 100V 1A MICROSMP

Vishay General Semiconductor - Diodes Division

15,360 -
MSE1PBHM3/I

数据表

- DO-219AD Tape & Reel (TR) Active Standard 100 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 780 ns 1 µA @ 100 V 5pF @ 4V, 1MHz 1A Automotive AEC-Q101 Surface Mount DO-219AD (MicroSMP) -55°C ~ 175°C
SF10JG-B

SF10JG-B

DIODE GEN PURP 600V 1A DO41

Diodes Incorporated

6,104 -
SF10JG-B

数据表

- DO-204AL, DO-41, Axial Bulk Obsolete Standard 600 V 1.5 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V 50pF @ 4V, 1MHz 1A - - Through Hole DO-41 -65°C ~ 150°C
RFV8BGE6STL

RFV8BGE6STL

DIODE GEN PURP 600V 8A TO252GE

Rohm Semiconductor

2,500 -
RFV8BGE6STL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 2.8 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 10 µA @ 600 V - 8A - - Surface Mount TO-252GE 150°C
SF30AG-B

SF30AG-B

DIODE GEN PURP 50V 3A DO201AD

Diodes Incorporated

9,126 -
SF30AG-B

数据表

- DO-201AD, Axial Bulk Obsolete Standard 50 V 950 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 50 V 75pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 150°C
RFUH20NS6STL

RFUH20NS6STL

DIODE GEN PURP 600V 20A LPDS

Rohm Semiconductor

952 -
RFUH20NS6STL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 2.8 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V - 20A - - Surface Mount LPDS 150°C (Max)
VS-10ETF04-M3

VS-10ETF04-M3

DIODE GEN PURP 400V 10A TO220AC

Vishay General Semiconductor - Diodes Division

8,028 -
VS-10ETF04-M3

数据表

- TO-220-2 Tube Active Standard 400 V 1.2 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 100 µA @ 400 V - 10A - - Through Hole TO-220AC -45°C ~ 150°C
VS-ETH3006STRL-M3

VS-ETH3006STRL-M3

DIODE GEN PURP 600V 30A TO263AB

Vishay General Semiconductor - Diodes Division

7,919 -
VS-ETH3006STRL-M3

数据表

FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 2.65 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 26 ns 30 µA @ 600 V - 30A - - Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
BY228GP-E3/73

BY228GP-E3/73

DIODE GP 1.5KV 2.5A DO201AD

Vishay General Semiconductor - Diodes Division

964 -
BY228GP-E3/73

数据表

- DO-201AD, Axial Cut Tape (CT) Active Standard 1500 V 1.6 V @ 2.5 A Standard Recovery >500ns, > 200mA (Io) 20 µs 5 µA @ 1500 V 40pF @ 4V, 1MHz 2.5A - - Through Hole DO-201AD -65°C ~ 150°C
IDP20E65D2XKSA1

IDP20E65D2XKSA1

DIODE GP 650V 40A TO220-2-1

Infineon Technologies

460 -
IDP20E65D2XKSA1

数据表

- TO-220-2 Tube Active Standard 650 V 2.2 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 32 ns 40 µA @ 650 V - 40A - - Through Hole PG-TO220-2-1 -40°C ~ 175°C
UJ3D06508TS

UJ3D06508TS

DIODE SIL CARB 650V 8A TO220-2

Qorvo

28,148 -
UJ3D06508TS

数据表

Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 250pF @ 1V, 1MHz 8A - - Through Hole TO-220-2 -55°C ~ 175°C
RF505BGE6STL

RF505BGE6STL

DIODE GEN PURP 600V 5A TO252GE

Rohm Semiconductor

2,461 -
RF505BGE6STL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 1.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 600 V - 5A - - Surface Mount TO-252GE 150°C
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