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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
GP10-4002-M3S/73

GP10-4002-M3S/73

DIODE GEN PURPOSE DO204AL

Vishay General Semiconductor - Diodes Division

8,179 -
GP10-4002-M3S/73

数据表

* - Tape & Box (TB) Obsolete - - - - - - - - - - - - -
GP10AE-M3/73

GP10AE-M3/73

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,544 -
GP10AE-M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 50 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 50 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10D-6453M3/73

GP10D-6453M3/73

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3,184 -
GP10D-6453M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 200 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10G-7010M3/73

GP10G-7010M3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,287 -
GP10G-7010M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 400 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10GE-6329M3/73

GP10GE-6329M3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

8,882 -
GP10GE-6329M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 400 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10J-6600M3/73

GP10J-6600M3/73

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

4,552 -
GP10J-6600M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 600 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 600 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
V35PW12-M3/I

V35PW12-M3/I

DIODE SCHOTTKY 120V 35A SLIMDPAK

Vishay General Semiconductor - Diodes Division

1,028 -
V35PW12-M3/I

数据表

eSMP®, TMBS® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 120 V 1.05 V @ 35 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 120 V 2350pF @ 4V, 1MHz 35A - - Surface Mount SlimDPAK -40°C ~ 150°C
SE10DTGHM3/I

SE10DTGHM3/I

DIODE GEN PURP 400V 2.9A SMPD

Vishay General Semiconductor - Diodes Division

287 -
SE10DTGHM3/I

数据表

- TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active Standard 400 V 1.15 V @ 10 A Standard Recovery >500ns, > 200mA (Io) 3 µs 15 µA @ 400 V 67pF @ 4V, 1MHz 2.9A Automotive AEC-Q101 Surface Mount SMPD -55°C ~ 175°C
STB15100

STB15100

DIODE SCHOTTKY 100V D2PAK

SMC Diode Solutions

1,225 -
STB15100

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 100 V 750 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 100 V 686pF @ 5V, 1MHz - - - Surface Mount D2PAK -55°C ~ 150°C
MSQ1PJ-M3/H

MSQ1PJ-M3/H

DIODE GEN PURP 600V 1A MICROSMP

Vishay General Semiconductor - Diodes Division

1,075 -
MSQ1PJ-M3/H

数据表

eSMP® DO-219AD Tape & Reel (TR) Active Standard 600 V 1.2 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 650 ns 1 µA @ 600 V 4pF @ 4V, 1MHz 1A - - Surface Mount DO-219AD (MicroSMP) -55°C ~ 175°C
VS-HFA15TB60-1-M3

VS-HFA15TB60-1-M3

DIODE GEN PURP 600V 15A TO220-3

Vishay General Semiconductor - Diodes Division

784 -
VS-HFA15TB60-1-M3

数据表

HEXFRED® TO-220-3 Tube Active Standard 600 V 2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 600 V - 15A - - Through Hole TO-220-3 -55°C ~ 150°C
SE12DTJ-M3/I

SE12DTJ-M3/I

DIODE GEN PURP 600V 3.2A SMPD

Vishay General Semiconductor - Diodes Division

300 -
SE12DTJ-M3/I

数据表

- TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active Standard 600 V 1.15 V @ 12 A Standard Recovery >500ns, > 200mA (Io) 3 µs 20 µA @ 600 V 90pF @ 4V, 1MHz 3.2A Automotive AEC-Q101 Surface Mount SMPD -55°C ~ 175°C
SE10DTLGHM3/I

SE10DTLGHM3/I

DIODE GEN PURP 400V 3.5A SMPD

Vishay General Semiconductor - Diodes Division

2,300 -
SE10DTLGHM3/I

数据表

- TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active Standard 400 V 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 280 ns 5 µA @ 400 V 70pF @ 4V, 1MHz 3.5A Automotive AEC-Q101 Surface Mount SMPD -55°C ~ 175°C
RFN10BM3SFHTL

RFN10BM3SFHTL

DIODE GEN PURP 350V 10A TO252

Rohm Semiconductor

4,195 -
RFN10BM3SFHTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 350 V 1.5 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 350 V - 10A Automotive AEC-Q101 Surface Mount TO-252 150°C (Max)
RFV5BGE6STL

RFV5BGE6STL

DIODE GEN PURP 600V 5A TO252GE

Rohm Semiconductor

2,470 -
RFV5BGE6STL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 2.8 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 10 µA @ 600 V - 5A - - Surface Mount TO-252GE 150°C
SE10DTLJHM3/I

SE10DTLJHM3/I

DIODE GEN PURP 600V 3.5A SMPD

Vishay General Semiconductor - Diodes Division

2,076 -
SE10DTLJHM3/I

数据表

- TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active Standard 600 V 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 280 ns 5 µA @ 600 V 70pF @ 4V, 1MHz 3.5A Automotive AEC-Q101 Surface Mount SMPD -55°C ~ 175°C
MER802FT_T0_00601

MER802FT_T0_00601

DIODE GEN PURP 200V 8A ITO220AC

Panjit International Inc.

2,000 -
MER802FT_T0_00601

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 200 V 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 1 µA @ 200 V 80pF @ 4V, 1MHz 8A - - Through Hole ITO-220AC -55°C ~ 175°C
MER802T_T0_00601

MER802T_T0_00601

DIODE GEN PURP 200V 8A TO220AC

Panjit International Inc.

1,990 -
MER802T_T0_00601

数据表

- TO-220-2 Tube Active Standard 200 V 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 1 µA @ 200 V 80pF @ 4V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 175°C
BYWF29-200-E3/45

BYWF29-200-E3/45

DIODE GEN PURP 200V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

332 -
BYWF29-200-E3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 200 V 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 200 V - 8A - - Through Hole ITO-220AC -65°C ~ 150°C
DST860S

DST860S

DIODE SCHOTTKY 60V 8A TO277B

Littelfuse Inc.

12,595 -
DST860S

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 60 V 610 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 600 µA @ 60 V 502pF @ 5V, 1MHz 8A - - Surface Mount TO-277B -55°C ~ 150°C
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