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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
CTLSH4-200M364 TR13 PBFREE

CTLSH4-200M364 TR13 PBFREE

DIODE SCHOTTKY 200V 4A TLM364

Central Semiconductor Corp

6,129 -
CTLSH4-200M364 TR13 PBFREE

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Active Schottky 200 V 840 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) - 1 µA @ 200 V 140pF @ 4V, 1MHz 4A - - Surface Mount TLM364 -55°C ~ 150°C
HER305GT-G

HER305GT-G

DIODE GEN PURP 400V 3A DO27

Comchip Technology

8,162 -
HER305GT-G

数据表

- DO-201AA, DO-27, Axial Tape & Reel (TR) Active Standard 400 V 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 400 V - 3A - - Through Hole DO-27 -55°C ~ 150°C
PMEG4030ER/BX

PMEG4030ER/BX

DIODE SCHOTTKY 40V 3A SOD123W

NXP USA Inc.

5,672 -
PMEG4030ER/BX

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
V20PM63-M3/H

V20PM63-M3/H

DIODE SCHOTTKY 60V 4.9A TO277A

Vishay General Semiconductor - Diodes Division

2,973 -
V20PM63-M3/H

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 60 V 680 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 40 µA @ 60 V 3400pF @ 4V, 1MHz 4.9A Automotive AEC-Q101 Surface Mount TO-277A (SMPC) -40°C ~ 175°C
BAS316/ZLF

BAS316/ZLF

DIODE GEN PURP 100V 215MA SOD323

NXP USA Inc.

9,563 -
BAS316/ZLF

数据表

- SC-76, SOD-323 Tape & Reel (TR) Obsolete Standard 100 V 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 500 nA @ 80 V 1.5pF @ 0V, 1MHz 215mA - - Surface Mount SOD-323 150°C (Max)
HER306GT-G

HER306GT-G

DIODE GEN PURP 600V 3A DO27

Comchip Technology

5,748 -
HER306GT-G

数据表

- DO-201AA, DO-27, Axial Tape & Reel (TR) Active Standard 600 V 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 600 V - 3A - - Through Hole DO-27 -55°C ~ 150°C
BAS321/ZLF

BAS321/ZLF

DIODE GEN PURP 200V 250MA SOD323

NXP USA Inc.

4,799 -
BAS321/ZLF

数据表

- SC-76, SOD-323 Tape & Reel (TR) Obsolete Standard 200 V 1.25 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 nA @ 200 V 2pF @ 0V, 1MHz 250mA - - Surface Mount SOD-323 150°C (Max)
HER307GT-G

HER307GT-G

DIODE GEN PURP 800V 3A DO27

Comchip Technology

2,257 -
HER307GT-G

数据表

- DO-201AA, DO-27, Axial Tape & Reel (TR) Active Standard 800 V 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 800 V - 3A - - Through Hole DO-27 -55°C ~ 150°C
BAS321/ZLX

BAS321/ZLX

DIODE GEN PURP 200V 250MA SOD323

NXP USA Inc.

9,305 -
BAS321/ZLX

数据表

- SC-76, SOD-323 Tape & Reel (TR) Obsolete Standard 200 V 1.25 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 nA @ 200 V 2pF @ 0V, 1MHz 250mA - - Surface Mount SOD-323 150°C (Max)
1PS76SB21/ZLX

1PS76SB21/ZLX

DIODE SCHOTTKY 40V 200MA SOD323

Nexperia USA Inc.

6,128 -
1PS76SB21/ZLX

数据表

- SC-76, SOD-323 Tape & Reel (TR) Obsolete Schottky 40 V 550 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 15 µA @ 30 V 50pF @ 0V, 1MHz 200mA - - Surface Mount SOD-323 125°C (Max)
HER308GT-G

HER308GT-G

DIODE GEN PURP 1KV 3A DO27

Comchip Technology

8,039 -
HER308GT-G

数据表

- DO-201AA, DO-27, Axial Tape & Reel (TR) Active Standard 1000 V 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 1000 V - 3A - - Through Hole DO-27 -55°C ~ 150°C
BAS316/ZLX

BAS316/ZLX

DIODE GEN PURP 100V 215MA SOD323

NXP USA Inc.

8,724 -
BAS316/ZLX

数据表

- SC-76, SOD-323 Tape & Reel (TR) Obsolete Standard 100 V 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 500 nA @ 80 V 1pF @ 0V, 1MHz 215mA - - Surface Mount SOD-323 150°C (Max)
HER301GA-G

HER301GA-G

DIODE GEN PURP 50V 3A DO27

Comchip Technology

7,424 -
HER301GA-G

数据表

- DO-201AA, DO-27, Axial Tape & Box (TB) Active Standard 50 V 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 50 V - 3A - - Through Hole DO-27 -55°C ~ 150°C
BAS40/ZLVL

BAS40/ZLVL

DIODE SCHOTTKY 40V 120MA SOT23

NXP USA Inc.

7,239 -
BAS40/ZLVL

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Schottky 40 V 1 V @ 40 mA Small Signal =< 200mA (Io), Any Speed - 10 µA @ 40 V 5pF @ 0V, 1MHz 120mA - - Surface Mount SOT-23 (TO-236AB) 150°C (Max)
PMEG1201AESFCYL

PMEG1201AESFCYL

PMEG1201AESFC SOD962

Nexperia USA Inc.

8,024 -
PMEG1201AESFCYL

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - -
PMEG1201AESF/S50YL

PMEG1201AESF/S50YL

PMEG1201AESF/S50YL

NXP USA Inc.

8,401 -
PMEG1201AESF/S50YL

数据表

* - Bulk Obsolete - - - - - - - - - - - - -
HER302GA-G

HER302GA-G

DIODE GEN PURP 100V 3A DO27

Comchip Technology

3,005 -
HER302GA-G

数据表

- DO-201AA, DO-27, Axial Tape & Box (TB) Active Standard 100 V 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 100 V - 3A - - Through Hole DO-27 -55°C ~ 150°C
PMEG4030ER/DG/B2,1

PMEG4030ER/DG/B2,1

PMEG4030ER/DG/B2,1

NXP USA Inc.

7,936 -
PMEG4030ER/DG/B2,1

数据表

* - Bulk Obsolete - - - - - - - - - - - - -
HER303GA-G

HER303GA-G

DIODE GEN PURP 200V 3A DO27

Comchip Technology

6,753 -
HER303GA-G

数据表

- DO-201AA, DO-27, Axial Tape & Box (TB) Active Standard 200 V 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 200 V - 3A - - Through Hole DO-27 -55°C ~ 150°C
GP30J-E3/73

GP30J-E3/73

DIODE GEN PURP 600V 3A DO201AD

Vishay General Semiconductor - Diodes Division

1,942 -
GP30J-E3/73

数据表

SUPERECTIFIER® DO-201AD, Axial Cut Tape (CT) Active Standard 600 V 1.1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 5 µA @ 600 V - 3A - - Through Hole DO-201AD -65°C ~ 175°C
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