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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
BYV28-600-TAP

BYV28-600-TAP

DIODE AVALANCHE 600V 3.5A SOD64

Vishay General Semiconductor - Diodes Division

7,051 -
BYV28-600-TAP

数据表

- SOD-64, Axial Cut Tape (CT) Active Avalanche 600 V 1.35 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 210 ns 5 µA @ 600 V - 3.5A - - Through Hole SOD-64 -55°C ~ 175°C
RB058RSM15STL1

RB058RSM15STL1

150V 3A, TO-277GE, ULTRA LOW IR

Rohm Semiconductor

4,000 -
RB058RSM15STL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 150 V 830 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 2.1 µA @ 150 V - 3A - - Surface Mount TO-277A 175°C
STTH8S12D

STTH8S12D

DIODE GEN PURP 1.2KV 8A TO220AC

STMicroelectronics

1,450 -
STTH8S12D

数据表

- TO-220-2 Tube Active Standard 1200 V 2.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 5 µA @ 1200 V - 8A - - Through Hole TO-220AC 175°C (Max)
SE20DLJ-M3/I

SE20DLJ-M3/I

DIODE GEN PURP 600V 3.9A TO263AC

Vishay General Semiconductor - Diodes Division

975 -
SE20DLJ-M3/I

数据表

- TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active Standard 600 V 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 330 ns 5 µA @ 600 V 160pF @ 4V, 1MHz 3.9A Automotive AEC-Q101 Surface Mount TO-263AC (SMPD) -55°C ~ 175°C
CTLSH15-30M364 TR13 PBFREE

CTLSH15-30M364 TR13 PBFREE

DIODE SCHOTTKY 30V 15A TLM364

Central Semiconductor Corp

4,573 -
CTLSH15-30M364 TR13 PBFREE

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Active Schottky 30 V 560 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 30 V 920pF @ 4V, 1MHz 15A - - Surface Mount TLM364 -55°C ~ 150°C
VS-E5TX0812-M3

VS-E5TX0812-M3

DIODE GEN PURP 1.2KV 8A TO220AC

Vishay General Semiconductor - Diodes Division

957 -
VS-E5TX0812-M3

数据表

FRED Pt® TO-220-2 Tube Active Standard 1200 V 3.4 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 87 ns 50 µA @ 1200 V - 8A - - Through Hole TO-220AC -55°C ~ 175°C
RBR10RSM40BTL1

RBR10RSM40BTL1

DIODE SCHOTTKY 40V 10A TO277A

Rohm Semiconductor

2,979 -
RBR10RSM40BTL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 40 V 540 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 40 V - 10A - - Surface Mount TO-277A 150°C
S3D12065A

S3D12065A

DIODE SIL CARB 650V 35A TO220AC

SMC Diode Solutions

8,699 -
S3D12065A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 16 µA @ 650 V 764pF @ 0V, 1MHz 35A - - Through Hole TO-220AC (TO-220-2) -55°C ~ 175°C
RB078RSM10STL1

RB078RSM10STL1

100V 5A, TO-277GE, ULTRA LOW IR

Rohm Semiconductor

3,870 -
RB078RSM10STL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 840 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 1.3 µA @ 100 V - 5A - - Surface Mount TO-277A 175°C
VBT5202-M3/4W

VBT5202-M3/4W

DIODE SCHOTTKY 200V 5A TO263AB

Vishay General Semiconductor - Diodes Division

7,998 -
VBT5202-M3/4W

数据表

TMBS® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Schottky 200 V 880 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 200 V - 5A - - Surface Mount TO-263AB (D2PAK) -40°C ~ 175°C
MBRF20200

MBRF20200

DIODE SCHOTTKY 200V ITO220AC

SMC Diode Solutions

819 -
MBRF20200

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Schottky 200 V 950 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 200 V 400pF @ 5V, 1MHz - - - Through Hole ITO-220AC -55°C ~ 150°C
VS-8ETH03S-M3

VS-8ETH03S-M3

DIODE GEN PURP 300V 8A TO263AB

Vishay General Semiconductor - Diodes Division

8,000 -
VS-8ETH03S-M3

数据表

FRED Pt® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 300 V 1.25 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 20 µA @ 300 V - 8A - - Surface Mount TO-263AB (D2PAK) -65°C ~ 175°C
GP10KE-M3/73

GP10KE-M3/73

DIODE GEN PURP 800V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,116 -
GP10KE-M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 800 V 1.2 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 800 V 7pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
GP10M-5400M3/73

GP10M-5400M3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,922 -
GP10M-5400M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1000 V 1.2 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 3 µs 5 µA @ 1000 V 7pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
RGP10AE-M3/73

RGP10AE-M3/73

DIODE GEN PURPOSE DO-204AL

Vishay General Semiconductor - Diodes Division

6,263 -
RGP10AE-M3/73

数据表

* - Tape & Box (TB) Obsolete - - - - - - - - - - - - -
SDT10H50P5-7

SDT10H50P5-7

DIODE SCHOTTKY 50V 10A PDI5 1.5K

Diodes Incorporated

3,198 -
SDT10H50P5-7

数据表

- PowerDI™ 5 Tape & Reel (TR) Active Schottky 50 V 450 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 50 V - 10A - - Surface Mount PowerDI™ 5 -55°C ~ 150°C
SDT10H50P5-7D

SDT10H50P5-7D

DIODE SCHOTT 50V PDI 5 T&R 1.5K

Diodes Incorporated

7,384 -
SDT10H50P5-7D

数据表

- PowerDI™ 5 Tape & Reel (TR) Active Schottky 50 V 450 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 50 V - 10A - - Surface Mount PowerDI™ 5 -55°C ~ 150°C
AS3PJ-M3/86A

AS3PJ-M3/86A

DIODE AVALANCHE 600V 2.1A TO277A

Vishay General Semiconductor - Diodes Division

9,328 -
AS3PJ-M3/86A

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 600 V 920 mV @ 1.5 A Standard Recovery >500ns, > 200mA (Io) 1.2 µs 10 µA @ 600 V 37pF @ 4V, 1MHz 2.1A - - Surface Mount TO-277A (SMPC) -55°C ~ 175°C
RU 2ZV

RU 2ZV

DIODE GEN PURP 200V 1A AXIAL

Sanken Electric USA Inc.

6,488 -
RU 2ZV

数据表

- Axial Tape & Reel (TR) Active Standard 200 V 1.5 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 10 µA @ 200 V - 1A - - Through Hole - -40°C ~ 150°C
RU 2ZV1

RU 2ZV1

DIODE GEN PURP 200V 1A AXIAL

Sanken Electric USA Inc.

2,455 -
RU 2ZV1

数据表

- Axial Tape & Box (TB) Active Standard 200 V 1.5 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 10 µA @ 200 V - 1A - - Through Hole - -40°C ~ 150°C
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