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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
RFN5BM3SFHTL

RFN5BM3SFHTL

DIODE GEN PURP 350V 5A TO252

Rohm Semiconductor

1,368 -
RFN5BM3SFHTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 350 V 1.5 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 350 V - 5A Automotive AEC-Q101 Surface Mount TO-252 150°C (Max)
RB078BM30SFHTL

RB078BM30SFHTL

DIODE SCHOTTKY 30V 5A TO252

Rohm Semiconductor

2,427 -
RB078BM30SFHTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 30 V 720 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 30 V - 5A Automotive AEC-Q101 Surface Mount TO-252 150°C (Max)
RBR3RSM40BTFTL1

RBR3RSM40BTFTL1

DIODE SCHOTTKY 40V 3A TO277A

Rohm Semiconductor

3,948 -
RBR3RSM40BTFTL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 40 V 470 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 120 µA @ 40 V - 3A Automotive AEC-Q101 Surface Mount TO-277A 150°C
RBR5RSM40BTFTL1

RBR5RSM40BTFTL1

DIODE SCHOTTKY 40V 5A TO277A

Rohm Semiconductor

3,750 -
RBR5RSM40BTFTL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 40 V 530 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 120 µA @ 40 V - 5A Automotive AEC-Q101 Surface Mount TO-277A 150°C
RFN5TF6SC9

RFN5TF6SC9

DIODE GEN PURP 600V 5A TO220NFM

Rohm Semiconductor

990 -
RFN5TF6SC9

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 1.55 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - 5A - - Through Hole TO-220NFM 150°C
RFV5BM6SFHTL

RFV5BM6SFHTL

DIODE GEN PURP 600V 5A TO252

Rohm Semiconductor

2,130 -
RFV5BM6SFHTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 2.8 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 10 µA @ 600 V - 5A Automotive AEC-Q101 Surface Mount TO-252 150°C (Max)
RFUH20TB4SNZC9

RFUH20TB4SNZC9

DIODE GEN PURP 430V 20A TO220NFM

Rohm Semiconductor

989 -
RFUH20TB4SNZC9

数据表

- TO-220-2 Full Pack Tube Active Standard 430 V 1.7 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 430 V - 20A - - Through Hole TO-220NFM 150°C
RFN3BGE2STL

RFN3BGE2STL

DIODE GEN PURP 200V 3A TO252GE

Rohm Semiconductor

2,379 -
RFN3BGE2STL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 200 V 980 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 200 V - 3A - - Surface Mount TO-252GE 150°C
RFN10TF6SC9

RFN10TF6SC9

DIODE GEN PURP 600V 10A TO220NFM

Rohm Semiconductor

890 -
RFN10TF6SC9

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 1.55 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - 10A - - Through Hole TO-220NFM 150°C
RSX058BGE2STL

RSX058BGE2STL

200V 3A, TO-252, ULTRA LOW IRSBD

Rohm Semiconductor

2,483 -
RSX058BGE2STL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 200 V 870 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 200 nA @ 200 V - 3A - - Surface Mount TO-252GE 175°C
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