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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
RK 16V1

RK 16V1

DIODE SCHOTTKY 60V 2A AXIAL

Sanken Electric USA Inc.

8,615 -
RK 16V1

数据表

- Axial Cut Tape (CT) Obsolete Schottky 60 V 690 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 60 V - 2A - - Through Hole - -40°C ~ 150°C
VS-E5TH1506-M3

VS-E5TH1506-M3

DIODE GEN PURP 600V 15A TO220AC

Vishay General Semiconductor - Diodes Division

7,928 -
VS-E5TH1506-M3

数据表

FRED Pt® TO-220-2 Tube Active Standard 600 V 1.6 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 38 ns 10 µA @ 600 V - 15A - - Through Hole TO-220AC -55°C ~ 175°C
STTH8R03DJF-TR

STTH8R03DJF-TR

DIODE GEN PURP 300V 8A POWERFLAT

STMicroelectronics

3,670 -
STTH8R03DJF-TR

数据表

- 8-PowerVDFN Tape & Reel (TR) Active Standard 300 V 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 40 µA @ 300 V - 8A - - Surface Mount PowerFlat™ (5x6) 175°C (Max)
RK 34V1

RK 34V1

DIODE SCHOTTKY 40V 2.5A AXIAL

Sanken Electric USA Inc.

7,027 -
RK 34V1

数据表

- Axial Tape & Box (TB) Obsolete Schottky 40 V 550 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 40 V - 2.5A - - Through Hole - -40°C ~ 150°C
RB088RSM15STL1

RB088RSM15STL1

150V 10A, TO-277GE, ULTRA LOW IR

Rohm Semiconductor

2,945 -
RB088RSM15STL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 150 V 880 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 4.5 µA @ 150 V - 10A - - Surface Mount TO-277A 175°C
C3D02060A

C3D02060A

DIODE SIL CARB 600V 8A TO220-2

Wolfspeed, Inc.

754 -
C3D02060A

数据表

Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 1.7 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 120pF @ 0V, 1MHz 8A - - Through Hole TO-220-2 -55°C ~ 175°C
STTH506DTI

STTH506DTI

DIODE GP 600V 5A TO220AC INS

STMicroelectronics

236 -
STTH506DTI

数据表

- TO-220-2 Insulated, TO-220AC Tube Active Standard 600 V 3.6 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 6 µA @ 600 V - 5A - - Through Hole TO-220AC ins 175°C (Max)
RFNL10TJ6SGC9

RFNL10TJ6SGC9

DIODE GP 600V 10A TO220ACFP

Rohm Semiconductor

939 -
RFNL10TJ6SGC9

数据表

- TO-220-2 Tube Active Standard 600 V 1.3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 10 µA @ 600 V - 10A - - Through Hole TO-220ACFP 150°C (Max)
SB340/4

SB340/4

SCHOTTKY DO201 40V 3A 150C

Vishay General Semiconductor - Diodes Division

7,410 -
SB340/4

数据表

- DO-201AD, Axial Tape & Reel (TR) Obsolete Schottky 40 V 490 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V - 3A - - Through Hole DO-201AD -65°C ~ 125°C
IDP30E65D2XKSA1

IDP30E65D2XKSA1

DIODE GP 650V 60A TO220-2-1

Infineon Technologies

534 -
IDP30E65D2XKSA1

数据表

- TO-220-2 Tube Active Standard 650 V 2.2 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 42 ns 40 µA @ 650 V - 60A - - Through Hole PG-TO220-2-1 -40°C ~ 175°C
SS32-M3/9AT

SS32-M3/9AT

DIODE SCHOTTKY 20V 3A DO214AB

Vishay General Semiconductor - Diodes Division

3,918 -
SS32-M3/9AT

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Schottky 20 V 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 20 V - 3A - - Surface Mount DO-214AB (SMC) -55°C ~ 125°C
BYV28-150-TAP

BYV28-150-TAP

DIODE AVALANCHE 150V 3.5A SOD64

Vishay General Semiconductor - Diodes Division

10,975 -
BYV28-150-TAP

数据表

- SOD-64, Axial Cut Tape (CT) Active Avalanche 150 V 1.1 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 1 µA @ 150 V - 3.5A - - Through Hole SOD-64 -55°C ~ 175°C
SS33-M3/9AT

SS33-M3/9AT

DIODE SCHOTTKY 30V 3A DO214AB

Vishay General Semiconductor - Diodes Division

3,359 -
SS33-M3/9AT

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Schottky 30 V 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 30 V - 3A - - Surface Mount DO-214AB (SMC) -55°C ~ 125°C
RFN3BM2SFHTL

RFN3BM2SFHTL

DIODE GEN PURP 200V 3A TO252

Rohm Semiconductor

4,800 -
RFN3BM2SFHTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 200 V 980 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 200 V - 3A Automotive AEC-Q101 Surface Mount TO-252 150°C (Max)
SS34-M3/9AT

SS34-M3/9AT

DIODE SCHOTTKY 40V 3A DO214AB

Vishay General Semiconductor - Diodes Division

3,041 -
SS34-M3/9AT

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Schottky 40 V 500 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V - 3A - - Surface Mount DO-214AB (SMC) -55°C ~ 125°C
STTH806DTI

STTH806DTI

DIODE GP 600V 8A TO220AC INS

STMicroelectronics

1,666 -
STTH806DTI

数据表

- TO-220-2 Insulated, TO-220AC Tube Active Standard 600 V 3.6 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 600 V - 8A - - Through Hole TO-220AC ins 175°C (Max)
CDBA3100LR-HF

CDBA3100LR-HF

DIODE SCHOTTKY 100V 3A DO214AC

Comchip Technology

3,129 -
CDBA3100LR-HF

数据表

- DO-214AC, SMA Tape & Reel (TR) Active Schottky 100 V 750 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 100 V 250pF @ 4V, 1MHz 3A - - Surface Mount DO-214AC (SMA) -50°C ~ 150°C
MBR10U100HHE3-TP

MBR10U100HHE3-TP

DIODE SCHOTTKY 100V 10A TO277

Micro Commercial Co

2,216 -
MBR10U100HHE3-TP

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 100 V 850 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 100 V 320pF @ 4V, 1MHz 10A Automotive AEC-Q101 Surface Mount TO-277 -55°C ~ 175°C
S8D

S8D

DIODE GEN PURP 200V 8A SMC

Diotec Semiconductor

4,524 -
S8D

数据表

- DO-214AB, SMC Bulk Active Standard 200 V 980 mV @ 8 A Standard Recovery >500ns, > 200mA (Io) 1.5 µs 10 µA @ 200 V - 8A - - Surface Mount DO-214AB (SMC) -50°C ~ 150°C
MUR3060B-BP

MUR3060B-BP

DIODE GEN PURP 600V 30A TO247AD

Micro Commercial Co

1,739 -
MUR3060B-BP

数据表

- TO-247-2 Tube Not For New Designs Standard 600 V 2.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V - 30A - - Through Hole TO-247AD -55°C ~ 175°C
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