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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
UG2A-E3/54

UG2A-E3/54

DIODE GEN PURP 50V 2A DO204AC

Vishay General Semiconductor - Diodes Division

7,706 -
UG2A-E3/54

数据表

- DO-204AC, DO-15, Axial Tape & Reel (TR) Active Standard 50 V 950 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 5 µA @ 50 V - 2A - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
CSD01060A

CSD01060A

DIODE SIL CARB 600V 4A TO220-2

Wolfspeed, Inc.

7,868 -
CSD01060A

数据表

Zero Recovery™ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 1.8 V @ 1 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 600 V 80pF @ 0V, 1MHz 4A - - Through Hole TO-220-2 -55°C ~ 175°C
UG2C-E3/54

UG2C-E3/54

DIODE GEN PURP 150V 2A DO204AC

Vishay General Semiconductor - Diodes Division

9,557 -
UG2C-E3/54

数据表

- DO-204AC, DO-15, Axial Tape & Reel (TR) Active Standard 150 V 950 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 5 µA @ 150 V - 2A - - Through Hole DO-204AC (DO-15) -55°C ~ 150°C
RJU6052TDPP-EJ#T2

RJU6052TDPP-EJ#T2

DIODE GP 600V 10A TO220FP-2L

Renesas Electronics Corporation

5,551 -
RJU6052TDPP-EJ#T2

数据表

- TO-220-2 Full Pack Tube Discontinued at Digi-Key Standard 600 V 3 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 600 V - 10A - - Through Hole TO-220FP-2L 150°C (Max)
FSF10A20

FSF10A20

DIODE GP 200V 10A TO220 FM

KYOCERA AVX

925 -
FSF10A20

数据表

- TO-220-2 Full Pack Tube Active Standard 200 V 1.03 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 25 µA @ 200 V - 10A - - Through Hole TO-220-2 Full-Mold -40°C ~ 150°C
RS1BL RUG

RS1BL RUG

DIODE GP 100V 800MA SUB SMA

Taiwan Semiconductor Corporation

6,669 -
RS1BL RUG

数据表

- DO-219AB Tape & Reel (TR) Active Standard 100 V 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 100 V 10pF @ 4V, 1MHz 800mA - - Surface Mount Sub SMA -55°C ~ 150°C
RS1DL RUG

RS1DL RUG

DIODE GP 200V 800MA SUB SMA

Taiwan Semiconductor Corporation

2,675 -
RS1DL RUG

数据表

- DO-219AB Tape & Reel (TR) Active Standard 200 V 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 200 V 10pF @ 4V, 1MHz 800mA - - Surface Mount Sub SMA -55°C ~ 150°C
STTH15R06D

STTH15R06D

DIODE GEN PURP 600V 15A TO220AC

STMicroelectronics

922 -
STTH15R06D

数据表

- TO-220-2 Tube Active Standard 600 V 2.9 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 60 µA @ 600 V - 15A - - Through Hole TO-220AC 175°C (Max)
RS1GL RUG

RS1GL RUG

DIODE GP 400V 800MA SUB SMA

Taiwan Semiconductor Corporation

7,370 -
RS1GL RUG

数据表

- DO-219AB Tape & Reel (TR) Active Standard 400 V 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 400 V 10pF @ 4V, 1MHz 800mA - - Surface Mount Sub SMA -55°C ~ 150°C
RS1JL RUG

RS1JL RUG

DIODE GP 600V 800MA SUB SMA

Taiwan Semiconductor Corporation

2,822 -
RS1JL RUG

数据表

- DO-219AB Tape & Reel (TR) Active Standard 600 V 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 600 V 10pF @ 4V, 1MHz 800mA - - Surface Mount Sub SMA -55°C ~ 150°C
RS1KL RUG

RS1KL RUG

DIODE GP 800V 800MA SUB SMA

Taiwan Semiconductor Corporation

6,002 -
RS1KL RUG

数据表

- DO-219AB Tape & Reel (TR) Active Standard 800 V 1.3 V @ 800 mA Fast Recovery =< 500ns, > 200mA (Io) 500 ns 5 µA @ 800 V 10pF @ 4V, 1MHz 800mA - - Surface Mount Sub SMA -55°C ~ 150°C
RSFDL RUG

RSFDL RUG

DIODE GP 200V 500MA SUB SMA

Taiwan Semiconductor Corporation

3,543 -
RSFDL RUG

数据表

- DO-219AB Tape & Reel (TR) Active Standard 200 V 1.3 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 150 ns 5 µA @ 200 V 4pF @ 4V, 1MHz 500mA - - Surface Mount Sub SMA -55°C ~ 150°C
RSFJL RUG

RSFJL RUG

DIODE GP 600V 500MA SUB SMA

Taiwan Semiconductor Corporation

5,709 -
RSFJL RUG

数据表

- DO-219AB Tape & Reel (TR) Active Standard 600 V 1.3 V @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 250 ns 5 µA @ 600 V 4pF @ 4V, 1MHz 500mA - - Surface Mount Sub SMA -55°C ~ 150°C
CMOD6263 BK PBFREE

CMOD6263 BK PBFREE

DIODE SCHOTTKY 70V 15MA SOD523

Central Semiconductor Corp

7,915 -
CMOD6263 BK PBFREE

数据表

- SC-79, SOD-523 Bulk Active Schottky 70 V 410 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed 5 ns 200 nA @ 50 V 2pF @ 0V, 1MHz 15mA - - Surface Mount SOD-523 -65°C ~ 150°C
STTH152RL

STTH152RL

DIODE GEN PURP 200V 1.5A DO15

STMicroelectronics

4,452 -
STTH152RL

数据表

- DO-204AC, DO-15, Axial Tape & Reel (TR) Obsolete Standard 200 V 950 mV @ 1.5 A Fast Recovery =< 500ns, > 200mA (Io) 32 ns 1.5 µA @ 200 V - 1.5A - - Through Hole DO-15 175°C (Max)
U3B-M3/57T

U3B-M3/57T

DIODE GEN PURP 100V 2A DO214AB

Vishay General Semiconductor - Diodes Division

4,515 -
U3B-M3/57T

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 100 V 900 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 100 V 25pF @ 4V, 1MHz 2A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
IDP30E65D1XKSA1

IDP30E65D1XKSA1

DIODE GP 650V 60A TO220-2-1

Infineon Technologies

645 -
IDP30E65D1XKSA1

数据表

- TO-220-2 Tube Active Standard 650 V 1.7 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 64 ns 40 µA @ 650 V - 60A - - Through Hole PG-TO220-2-1 -40°C ~ 175°C
SE30DT12-M3/I

SE30DT12-M3/I

DIODE GEN PURP 1.2KV 30A SMPD

Vishay General Semiconductor - Diodes Division

866 -
SE30DT12-M3/I

数据表

eSMP® TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active Standard 1200 V 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) 3.4 µs 10 µA @ 1200 V 132pF @ 4V, 1MHz 30A - - Surface Mount SMPD -55°C ~ 175°C
VS-E5TH3006THN3

VS-E5TH3006THN3

DIODE GEN PURP 600V 30A TO220AC

Vishay General Semiconductor - Diodes Division

825 -
VS-E5TH3006THN3

数据表

FRED Pt® TO-220-2 Tube Active Standard 600 V 1.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 46 ns 20 µA @ 600 V - 30A Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 175°C
STPSC8H065DI

STPSC8H065DI

DIODE SIC 650V 8A TO220AC INS

STMicroelectronics

793 -
STPSC8H065DI

数据表

- TO-220-2 Insulated, TO-220AC Tube Active SiC (Silicon Carbide) Schottky 650 V 1.75 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) - 80 µA @ 650 V - 8A - - Through Hole TO-220AC ins -40°C ~ 175°C
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