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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
RN 4A

RN 4A

DIODE GEN PURP 600V 3A AXIAL

Sanken Electric USA Inc.

9,882 -
RN 4A

数据表

- Axial Bulk Obsolete Standard 600 V 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 600 V - 3A - - Through Hole - -40°C ~ 150°C
STTH15L06FP

STTH15L06FP

DIODE GP 600V 15A TO220FPAC

STMicroelectronics

715 -
STTH15L06FP

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Active Standard 600 V 1.55 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 15 µA @ 600 V - 15A - - Through Hole TO-220FPAC 175°C (Max)
RN 4Z

RN 4Z

DIODE GEN PURP 200V 3.5A AXIAL

Sanken Electric USA Inc.

5,649 -
RN 4Z

数据表

- Axial Bulk Obsolete Standard 200 V 920 mV @ 3.5 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 200 V - 3.5A - - Through Hole - -40°C ~ 150°C
RBR10RSM40BTFTL1

RBR10RSM40BTFTL1

DIODE SCHOTTKY 40V 10A TO277A

Rohm Semiconductor

3,960 -
RBR10RSM40BTFTL1

数据表

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 40 V 540 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 300 µA @ 40 V - 10A Automotive AEC-Q101 Surface Mount TO-277A 150°C
RP 1H

RP 1H

DIODE GEN PURP 2KV 100MA AXIAL

Sanken Electric USA Inc.

4,600 -
RP 1H

数据表

- Axial Bulk Obsolete Standard 2000 V 7 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 100 ns 2 µA @ 2000 V - 100mA - - Through Hole - -40°C ~ 150°C
DMA10IM1600UZ-TUB

DMA10IM1600UZ-TUB

DIODE GEN PURP 1.6KV 10A TO252AA

IXYS

220 -
DMA10IM1600UZ-TUB

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active Standard 1600 V 1.26 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1600 V 4pF @ 400V, 1MHz 10A - - Surface Mount TO-252AA -55°C ~ 175°C
RP 3F

RP 3F

DIODE GEN PURP 1.5KV 2A AXIAL

Sanken Electric USA Inc.

4,051 -
RP 3F

数据表

- Axial Bulk Obsolete Standard 1500 V - Standard Recovery >500ns, > 200mA (Io) 700 ns - - 2A - - Through Hole - -
STPS30M100ST

STPS30M100ST

DIODE SCHOTTKY 100V 30A TO220

STMicroelectronics

424 -
STPS30M100ST

数据表

- TO-220-3 Tube Active Schottky 100 V 800 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 175 µA @ 100 V - 30A - - Through Hole TO-220 150°C (Max)
B390-13-F

B390-13-F

DIODE SCHOTTKY 90V 3A SMC

Diodes Incorporated

3,613 -
B390-13-F

数据表

- DO-214AB, SMC Tape & Reel (TR) Active Schottky 90 V 790 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 90 V 100pF @ 4V, 1MHz 3A - - Surface Mount SMC -55°C ~ 125°C
GP30K-E3/54

GP30K-E3/54

DIODE GEN PURP 800V 3A DO201AD

Vishay General Semiconductor - Diodes Division

2,080 -
GP30K-E3/54

数据表

SUPERECTIFIER® DO-201AD, Axial Tape & Reel (TR) Active Standard 800 V 1.1 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 5 µA @ 800 V 40pF @ 4V, 1MHz 3A - - Through Hole DO-201AD -65°C ~ 175°C
RFC02MM2STFTR

RFC02MM2STFTR

DIODE GEN PURP 200V 500MA PMDU

Rohm Semiconductor

4,502 -
RFC02MM2STFTR

数据表

- SOD-123F Tape & Reel (TR) Active Standard 200 V 950 mV @ 500 mA Fast Recovery =< 500ns, > 200mA (Io) 35 ns 1 µA @ 200 V - 500mA Automotive AEC-Q101 Surface Mount PMDU 150°C (Max)
UJ3D06506TS

UJ3D06506TS

DIODE SIL CARB 650V 6A TO220-2

Qorvo

57,316 -
UJ3D06506TS

数据表

Gen-III TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 196pF @ 1V, 1MHz 6A - - Through Hole TO-220-2 -55°C ~ 175°C
JANTX1N914

JANTX1N914

DIODE GEN PURP 75V 200MA DO35

Microchip Technology

220 -
JANTX1N914

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 75 V 1.2 V @ 50 mA Small Signal =< 200mA (Io), Any Speed 5 ns 500 nA @ 75 V 4pF @ 0V, 1MHz 200mA Military MIL-PRF-19500/116 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
20TQ045S

20TQ045S

DIODE SCHOTTKY 45V 20A D2PAK

SMC Diode Solutions

3,976 -
20TQ045S

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 45 V 570 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 2.7 mA @ 45 V 683pF @ 5V, 1MHz 20A - - Surface Mount D2PAK -55°C ~ 150°C
RFN10BM6SFHTL

RFN10BM6SFHTL

DIODE GEN PURP 600V 10A TO252

Rohm Semiconductor

2,504 -
RFN10BM6SFHTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Standard 600 V 1.55 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - 10A Automotive AEC-Q101 Surface Mount TO-252 150°C (Max)
STTH8R06DIRG

STTH8R06DIRG

DIODE GP 600V 8A TO220AC INS

STMicroelectronics

2,003 -
STTH8R06DIRG

数据表

- TO-220-2 Insulated, TO-220AC Tube Active Standard 600 V 2.9 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 30 µA @ 600 V - 8A - - Through Hole TO-220AC ins 175°C (Max)
VS-ETH3007THN3

VS-ETH3007THN3

DIODE GEN PURP 650V 30A TO220AC

Vishay General Semiconductor - Diodes Division

1,045 -
VS-ETH3007THN3

数据表

FRED Pt® TO-220-2 Tube Active Standard 650 V 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 37 ns 30 µA @ 650 V - 30A Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 175°C
STPSC2H12D

STPSC2H12D

DIODE SIL CARB 1.2KV 2A TO220AC

STMicroelectronics

2,271 -
STPSC2H12D

数据表

ECOPACK®2 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.5 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 12 µA @ 1200 V 190pF @ 0V, 1MHz 2A - - Through Hole TO-220AC -40°C ~ 175°C
SE20DTLJ-M3/I

SE20DTLJ-M3/I

DIODE GEN PURP 600V 3.8A SMPD

Vishay General Semiconductor - Diodes Division

2,038 -
SE20DTLJ-M3/I

数据表

- TO-263-3, D2PAK (2 Leads + Tab), Variant Tape & Reel (TR) Active Standard 600 V 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 330 ns 5 µA @ 600 V 160pF @ 4V, 1MHz 3.8A Automotive AEC-Q101 Surface Mount SMPD -55°C ~ 175°C
RURP1560-F085P

RURP1560-F085P

DIODE GEN PURP 600V 15A TO220-2

onsemi

1,533 -
RURP1560-F085P

数据表

- TO-220-2 Tube Active Standard 600 V 1.5 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 100 µA @ 600 V - 15A - - Through Hole TO-220-2 -55°C ~ 175°C
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