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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PCDD1065G1_L2_00001650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,797 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 364pF @ 1V, 1MHz | 10A | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
|
PCDP08120G1_T0_00001TO-220AC, SIC Panjit International Inc. |
2,000 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 1200 V | 418pF @ 1V, 1MHz | 8A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
PCDP2065G1_T0_00001TO-220AC, SIC Panjit International Inc. |
2,000 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 747pF @ 1V, 1MHz | 20A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
PCDP10120G1_T0_00001TO-220AC, SIC Panjit International Inc. |
1,984 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 529pF @ 1V, 1MHz | 10A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
PCDB10120G1_R2_000011200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,350 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 529pF @ 1V, 1MHz | 10A | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
|
|
PCDD10120G1_L2_000011200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,768 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 529pF @ 1V, 1MHz | 10A | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
|
|
PCDP15120G1_T0_00001TO-220AC, SIC Panjit International Inc. |
2,000 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.7 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 1200 V | 815pF @ 1V, 1MHz | 15A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
PCDP20120G1_T0_00001TO-220AC, SIC Panjit International Inc. |
1,993 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 1200 V | 1040pF @ 1V, 1MHz | 20A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
|
PCDH20120G1_T0_006011200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
1,500 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 1200 V | 1023pF @ 1V, 1MHz | 20A | - | - | Through Hole | TO-247AD-2 | -55°C ~ 175°C |
|
|
PCDB20120G1_R2_000011200V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,365 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 1200 V | 1040pF @ 1V, 1MHz | 20A | - | - | Surface Mount | TO-263 | -55°C ~ 175°C |
