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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
PSDP30120L1_T0_00001

PSDP30120L1_T0_00001

TO-220AC, FAST

Panjit International Inc.

1,960 -
PSDP30120L1_T0_00001

数据表

- TO-220-2 Tube Active Standard 1200 V 2.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 240 ns 250 µA @ 1200 V - 30A - - Through Hole TO-220AC -55°C ~ 150°C
PSDH60120L1_T0_00001

PSDH60120L1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

1,500 -
PSDH60120L1_T0_00001

数据表

- TO-247-2 Tube Active Standard 1200 V 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 330 ns 250 µA @ 1200 V - 60A - - Through Hole TO-247AD-2 -55°C ~ 150°C
PCDB0465G1_R2_00001

PCDB0465G1_R2_00001

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,400 -
PCDB0465G1_R2_00001

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 146pF @ 1V, 1MHz 4A - - Surface Mount TO-263 -55°C ~ 175°C
PCDP0465G1_T0_00001

PCDP0465G1_T0_00001

TO-220AC, SIC

Panjit International Inc.

1,996 -
PCDP0465G1_T0_00001

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 4 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 146pF @ 1V, 1MHz 4A - - Through Hole TO-220AC -55°C ~ 175°C
PSDB3060S1_T0_00001

PSDB3060S1_T0_00001

TO-263, FRED

Panjit International Inc.

2,000 -
PSDB3060S1_T0_00001

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 600 V 2.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 70 ns 250 µA @ 600 V - 30A - - Surface Mount TO-263 -55°C ~ 150°C
PSDB3060L1_T0_00001

PSDB3060L1_T0_00001

TO-263, FRED

Panjit International Inc.

1,658 -
PSDB3060L1_T0_00001

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 600 V 1.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 115 ns 250 µA @ 600 V - 30A - - Surface Mount TO-263 -55°C ~ 150°C
PSDH30120L1_T0_00001

PSDH30120L1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

1,460 -
PSDH30120L1_T0_00001

数据表

- TO-247-2 Tube Not For New Designs Standard 1200 V 2.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 240 ns 250 µA @ 1200 V - 30A - - Through Hole TO-247AD-2 -55°C ~ 150°C
PSDH30120S1_T0_00001

PSDH30120S1_T0_00001

TO-247AD-2LD, FAST

Panjit International Inc.

1,388 -
PSDH30120S1_T0_00001

数据表

- TO-247-2 Tube Active Standard 1200 V 3.5 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 250 µA @ 1200 V - 30A - - Through Hole TO-247AD-2 -55°C ~ 150°C
PCDD0665G1_L2_00001

PCDD0665G1_L2_00001

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

2,976 -
PCDD0665G1_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 228pF @ 1V, 1MHz 6A - - Surface Mount TO-252AA -55°C ~ 175°C
PCDB0665G1_R2_00001

PCDB0665G1_R2_00001

650V SIC SCHOTTKY BARRIER DIODE

Panjit International Inc.

800 -
PCDB0665G1_R2_00001

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 228pF @ 1V, 1MHz 6A - - Surface Mount TO-263 -55°C ~ 175°C
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