Panjit International Inc.|单个二极管 - 页 97

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
PCDP05120G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,943	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1200 V	252pF @ 1V, 1MHz	5A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP1265G1_T0_00001 TO-220AC, SIC Panjit International Inc.	2,000	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	452pF @ 1V, 1MHz	12A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP0665G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,998	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	228pF @ 1V, 1MHz	6A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PSDH6060L1_T0_00001 TO-247AD-2LD, FAST Panjit International Inc.	1,425	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	600 V	1.75 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	205 ns	250 µA @ 600 V	-	60A	-	-	Through Hole	TO-247AD-2	-55°C ~ 150°C
PCDB0865G1_R2_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,390	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	296pF @ 1V, 1MHz	8A	-	-	Surface Mount	TO-263	-55°C ~ 175°C
PCDD0865G1_L2_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	2,977	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	296pF @ 1V, 1MHz	8A	-	-	Surface Mount	TO-252AA	-55°C ~ 175°C
PCDP0865G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,995	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	296pF @ 1V, 1MHz	8A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP1665G1_T0_00001 TO-220AC, SIC Panjit International Inc.	2,000	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	618pF @ 1V, 1MHz	16A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDP1065G1_T0_00001 TO-220AC, SIC Panjit International Inc.	1,478	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	364pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PCDB1065G1_R2_00001 650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc.	4,000	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	364pF @ 1V, 1MHz	10A	-	-	Surface Mount	TO-263	-55°C ~ 175°C

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