onsemi|单个二极管 - 页 100

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
FFSH10120A-F155 DIODE SIL CARB 1.2KV 17A TO247-2 onsemi	180	-	询价单	数据表	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	612pF @ 1V, 100kHz	17A	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSH2065ADN-F155 DIODE SIL CARB 650V 13A TO247-3 onsemi	632	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	575pF @ 1V, 100kHz	13A	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
NDSH20120C-F155 SIC DIODE GEN2.0 1200V TO247-2L onsemi	415	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1480pF @ 1V, 100kHz	26A	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSH15120A DIODE SIL CARB 1.2KV 26A TO247-2 onsemi	229	-	询价单	数据表	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	1.75 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	936pF @ 1V, 100kHz	26A	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSH3065ADN-F155 DIODE SIL CARB 650V 23A TO247-3 onsemi	447	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	887pF @ 1V, 100kHz	23A	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
NDSH30120C-F155 SIC DIODE GEN2.0 1200V TO247-2L onsemi	326	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.75 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1961pF @ 1V, 100kHz	38A	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSH4065A DIODE SIL CARB 650V 48A TO247-2 onsemi	551	-	询价单	数据表	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	-	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	1989pF @ 1V, 100kHz	48A	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
FFSH20120A-F155 DIODE SIL CARB 1.2KV 30A TO247-2 onsemi	579	-	询价单	数据表	-	TO-247-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	1200 V	1.75 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	1220pF @ 1V, 100kHz	30A	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
NDSH40120C-F155 SIC DIODE GEN2.0 1200V TO247-2L onsemi	421	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.75 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	2840pF @ 1V, 100kHz	46A	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
PCFF100H120SWF 1200V/100A GEN7 FRD HS SAWN-ON-F onsemi	4,781	-	询价单	数据表	-	Die	Tray	Active	Standard	1200 V	2.08 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	347.1 ns	10 µA @ 1200 V	-	100A	-	-	Surface Mount	Wafer	-40°C ~ 175°C

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