NXP Semiconductors|单个二极管 - 页 6

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
PMEG1020EV,115 DIODE SCHOTTKY 10V 2A SOT666 NXP Semiconductors	180,000	-	询价单	数据表	-	SOT-563, SOT-666	Bulk	Active	Schottky	10 V	460 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	3 mA @ 10 V	45pF @ 5V, 1MHz	2A	-	-	Surface Mount	SOT-666	150°C (Max)
PMEG2010EPASX DIODE SCHOTTKY 20V 1A DFN2020D-3 NXP USA Inc.	30,000	-	询价单	数据表	-	3-UDFN Exposed Pad	Bulk	Active	Schottky	20 V	375 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	335 µA @ 20 V	175pF @ 1V, 1MHz	1A	Automotive	AEC-Q101	Surface Mount	DFN2020D-3	150°C (Max)
PMEG2010EPASX DIODE SCHOTTKY 20V 1A DFN2020D-3 NXP Semiconductors	24,000	-	询价单	数据表	-	3-UDFN Exposed Pad	Bulk	Active	Schottky	20 V	375 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	335 µA @ 20 V	175pF @ 1V, 1MHz	1A	Automotive	AEC-Q101	Surface Mount	DFN2020D-3	150°C (Max)
1PS74SB23,125 DIODE SCHOTTKY 25V 1A 6TSOP NXP Semiconductors	30,000	-	询价单	数据表	-	SC-74, SOT-457	Bulk	Active	Schottky	25 V	450 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 25 V	100pF @ 4V, 1MHz	1A	-	-	Surface Mount	6-TSOP	125°C (Max)
PMEG45U10EPDAZ DIODE SCHOTTKY 45V 10A CFP15 NXP Semiconductors	1,329,000	-	询价单	数据表	-	TO-277, 3-PowerDFN	Bulk	Active	Schottky	45 V	490 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	16 ns	20 µA @ 10 V	1170pF @ 1V, 1MHz	10A	-	-	Surface Mount	CFP15	-55°C ~ 150°C
BYV25FX-600,127 DIODE GEN PURP 600V 5A TO220F NXP USA Inc.	4,000	-	询价单	数据表	-	TO-220-2 Full Pack	Bulk	Active	Standard	600 V	1.9 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	50 µA @ 600 V	-	5A	-	-	Through Hole	TO-220F	150°C (Max)
BYC5D-500,127 DIODE GEN PURP 500V 5A TO220AC NXP USA Inc.	15,000	-	询价单	数据表	-	TO-220-2	Bulk	Active	Standard	500 V	2 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	16 ns	40 µA @ 500 V	-	5A	-	-	Through Hole	TO-220AC	150°C (Max)
BYC8DX-600,127 DIODE GEN PURP 600V 8A TO220F NXP USA Inc.	4,689	-	询价单	数据表	-	TO-220-2 Full Pack	Bulk	Active	Standard	600 V	2.9 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	40 µA @ 600 V	-	8A	-	-	Through Hole	TO-220F	150°C (Max)
BYC10D-600,127 DIODE GEN PURP 500V 10A TO220AC NXP USA Inc.	2,763	-	询价单	数据表	-	TO-220-2	Bulk	Active	Standard	500 V	2.5 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	18 ns	200 µA @ 600 V	-	10A	-	-	Through Hole	TO-220AC	150°C (Max)
BYR29-600,127 DIODE GEN PURP 600V 8A TO220AC NXP USA Inc.	3,494	-	询价单	数据表	-	TO-220-2	Bulk	Active	Standard	600 V	1.5 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	10 µA @ 600 V	-	8A	-	-	Through Hole	TO-220AC	150°C (Max)

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