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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PMEG045T150EPDAZDIODE SCHOTTKY 45V 15A CFP15 NXP Semiconductors |
91,789 | - |
|
数据表 |
- | TO-277, 3-PowerDFN | Bulk | Active | Schottky | 45 V | 550 mV @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 20 ns | 100 µA @ 45 V | 800pF @ 10V, 1MHz | 15A | Automotive | AEC-Q101 | Surface Mount | CFP15 | 175°C (Max) |
|
BYW29E-100,127DIODE FAST REC 100V 8A TO220AC NXP USA Inc. |
3,200 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
BYC8-600,127DIODE RECT 600V 8A SOT78 NXP USA Inc. |
9,401 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RHRG5060RECTIFIER DIODE, AVALANCHE, 1 PH NXP USA Inc. |
309 | - |
|
数据表 |
- | TO-247-2 | Bulk | Active | Avalanche | 600 V | 2.1 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 250 µA @ 600 V | - | 50A | - | - | Through Hole | TO-247-2 | -65°C ~ 175°C |
|
BAS32L,115DIODE GEN PURP 75V 200MA LLDS NXP Semiconductors |
2,814,167 | - |
|
数据表 |
- | DO-213AC, MINI-MELF, SOD-80 | Bulk | Active | Standard | 75 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 5 µA @ 75 V | 2pF @ 0V, 1MHz | 200mA | - | - | Surface Mount | LLDS; MiniMelf | 200°C (Max) |
|
BAS16,235DIODE GP 100V 215MA TO236AB NXP Semiconductors |
1,941,951 | - |
|
数据表 |
BAS16 | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | Standard | 100 V | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 500 nA @ 80 V | 1.5pF @ 0V, 1MHz | 215mA | Automotive | AEC-Q101 | Surface Mount | TO-236AB | 150°C (Max) |
|
|
BAS32L,135DIODE GEN PURP 75V 200MA LLDS NXP Semiconductors |
635,088 | - |
|
数据表 |
- | DO-213AC, MINI-MELF, SOD-80 | Bulk | Active | Standard | 75 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 5 µA @ 75 V | 2pF @ 0V, 1MHz | 200mA | - | - | Surface Mount | LLDS; MiniMelf | 200°C (Max) |
|
BAS16W,115DIODE GEN PURP 100V 175MA SOT323 NXP Semiconductors |
473,899 | - |
|
数据表 |
BAS16 | SC-70, SOT-323 | Bulk | Active | Standard | 100 V | 1.25 V @ 150 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 500 nA @ 80 V | 1.5pF @ 0V, 1MHz | 175mA | Automotive | AEC-Q101 | Surface Mount | SOT-323 | -65°C ~ 150°C |
|
BAS21/MI,215BAS21 - HIGH-VOLTAGE SWITCHING D NXP USA Inc. |
463,120 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
PMBD6050,215DIODE GEN PURP 70V 215MA TO236AB NXP Semiconductors |
399,999 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | Standard | 70 V | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 100 nA @ 50 V | 1.5pF @ 0V, 1MHz | 215mA | - | - | Surface Mount | TO-236AB | 150°C (Max) |
