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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANTX1N4153-1

JANTX1N4153-1

DIODE GEN PURP 50V 150MA DO204AH

Microchip Technology

760 -
JANTX1N4153-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 50 V 880 mV @ 20 mA Small Signal =< 200mA (Io), Any Speed 4 ns 50 nA @ 50 V 2pF @ 0V, 1MHz 150mA Military MIL-PRF-19500/337 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JAN1N1184R

JAN1N1184R

DIODE GEN PURP 100V 35A DO5

Microchip Technology

100 -
JAN1N1184R

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 100 V 1.4 V @ 110 A Standard Recovery >500ns, > 200mA (Io) - - - 35A Military MIL-PRF-19500/297 Stud Mount DO-5 (DO-203AB) -65°C ~ 175°C
JAN1N1206A

JAN1N1206A

DIODE GEN PURP 600V 12A DO203AA

Microchip Technology

75 -
JAN1N1206A

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard 600 V 1.35 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V - 12A Military MIL-PRF-19500/260 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
JANS1N6640

JANS1N6640

DIODE GEN PURP 50V 300MA DO204AH

Microchip Technology

474 -
JANS1N6640

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 50 V 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 50 V - 300mA Military MIL-PRF-19500/609 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
JANTXV1N1204AR

JANTXV1N1204AR

DIODE GP REV 400V 12A DO203AA

Microchip Technology

174 -
JANTXV1N1204AR

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 1.35 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 400 V - 12A Military MIL-PRF-19500/260 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
JANS1N3595US

JANS1N3595US

DIODE GEN PURP 200MA B SQ-MELF

Microchip Technology

361 -
JANS1N3595US

数据表

- SQ-MELF, B Bulk Active Standard - 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - 200mA Military MIL-S-19500-241 Surface Mount B, SQ-MELF -65°C ~ 150°C
1N4045

1N4045

DIODE GP 100V 275A DO205AB DO9

Microchip Technology

87 -
1N4045

数据表

- DO-205AB, DO-9, Stud Bulk Active Standard 100 V 1.3 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 15 mA @ 100 V - 275A - - Stud Mount DO-205AB (DO-9) -65°C ~ 190°C
1N647UR-1

1N647UR-1

DIODE GP 400V 400MA DO213AA

Microchip Technology

2,956 -
1N647UR-1

数据表

- DO-213AA Bulk Active Standard 400 V 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 400 V - 400mA - - Surface Mount DO-213AA -65°C ~ 175°C
1N4246/TR

1N4246/TR

DIODE GEN PURP 400V 1A

Microchip Technology

9,562 -
1N4246/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 400 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 400 V - 1A - - Through Hole A, Axial -65°C ~ 175°C
1N459A/TR

1N459A/TR

DIODE GP REV 200V 150MA DO35

Microchip Technology

4,944 -
1N459A/TR

数据表

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Standard, Reverse Polarity 200 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 200 V - 150mA - - Through Hole DO-204AH (DO-35) -65°C ~ 150°C
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