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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JAN1N4246/TR

JAN1N4246/TR

DIODE GEN PURP 400V 1A

Microchip Technology

9,858 -
JAN1N4246/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 400 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 400 V - 1A Military MIL-PRF-19500/286 Through Hole A, Axial -65°C ~ 175°C
JAN1N3600

JAN1N3600

DIODE GEN PURP 50V 200MA DO7

Microchip Technology

3,735 -
JAN1N3600

数据表

- DO-204AA, DO-7, Axial Bulk Discontinued at Digi-Key Standard 50 V 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 4 ns 100 nA @ 50 V - 200mA Military MIL-PRF-19500/231 Through Hole DO-7 -65°C ~ 175°C
UFS320G/TR13

UFS320G/TR13

DIODE GEN PURP 200V 3A DO215AB

Microchip Technology

6,583 -
UFS320G/TR13

数据表

- DO-215AB, SMC Gull Wing Tape & Reel (TR) Active Standard 200 V 950 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 200 V - 3A - - Surface Mount DO-215AB -55°C ~ 175°C
1N482B

1N482B

DIODE GEN PURP 30V 200MA DO35

Microchip Technology

7,145 -
1N482B

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 30 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 30 V - 200mA - - Through Hole DO-204AH (DO-35) -65°C ~ 200°C
1N484B

1N484B

DIODE GEN PURP 125V 200MA DO35

Microchip Technology

5,867 -
1N484B

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 125 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 125 V - 200mA - - Through Hole DO-204AH (DO-35) -65°C ~ 200°C
1N484A/TR

1N484A/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

5,898 -
1N484A/TR

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - -
CD4955D

CD4955D

VOLTAGE REGULATOR

Microchip Technology

400 -
CD4955D

数据表

* - Bulk Active - - - - - - - - - - - - -
UES1103

UES1103

DIODE GEN PURP 150V 2.5A AXIAL

Microchip Technology

109 -
UES1103

数据表

- A, Axial Bulk Active Standard 150 V 975 mV @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 2 µA @ 150 V - 2.5A - - Through Hole A, Axial 175°C (Max)
JANS1N5809

JANS1N5809

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

270 -
JANS1N5809

数据表

- B, Axial Bulk Active Standard 100 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
JANTX1N4500

JANTX1N4500

DIODE GEN PURP 80V DO35

Microchip Technology

1,226 -
JANTX1N4500

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 80 V 1.1 V @ 300 mA Fast Recovery =< 500ns, > 200mA (Io) 6 ns 100 nA @ 75 V - - Military MIL-PRF-19500/403 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
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