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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
R714

R714

RECTIFIER

Microchip Technology

7,474 -
R714

数据表

- TO-204AA, TO-3 Bulk Active Standard 400 V 1.4 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 1 mA @ 400 V - 15A - - Through Hole TO-204AA (TO-3) -65°C ~ 150°C
R716

R716

DIODE GEN PURP 600V 15A TO204AA

Microchip Technology

9,742 -
R716

数据表

- TO-204AA, TO-3 Bulk Active Standard 600 V 1.4 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 1 mA @ 600 V - 15A - - Through Hole TO-204AA (TO-3) -65°C ~ 150°C
R716X

R716X

RECTIFIER

Microchip Technology

8,286 -
R716X

数据表

- TO-204AA, TO-3 Bulk Active Standard 600 V 1.4 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 1 mA @ 600 V - 15A - - Through Hole TO-204AA (TO-3) -65°C ~ 150°C
R712XE

R712XE

DIODE GEN PURP 200V 15A TO204AA

Microchip Technology

2,207 -
R712XE

数据表

- TO-204AA, TO-3 Bulk Active Standard 200 V 1.4 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 1 mA @ 200 V - 15A - - Through Hole TO-204AA (TO-3) -65°C ~ 150°C
R714XE

R714XE

DIODE GEN PURP 400V 15A TO204AA

Microchip Technology

8,178 -
R714XE

数据表

- TO-204AA, TO-3 Bulk Active Standard 400 V 1.4 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 1 mA @ 400 V - 15A - - Through Hole TO-204AA (TO-3) -65°C ~ 150°C
JANTX1N1614

JANTX1N1614

DIODE GEN PURP 200V 15A DO203AA

Microchip Technology

6,802 -
JANTX1N1614

数据表

- DO-203AA, DO-4, Stud Bulk Discontinued at Digi-Key Standard 200 V 1.5 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 200 V - 15A Military MIL-PRF-19500/162 Stud Mount DO-203AA -65°C ~ 175°C
1N5824

1N5824

DIODE SCHOTTKY 30V 5A AXIAL

Microchip Technology

7,211 -
1N5824

数据表

- Axial Bulk Discontinued at Digi-Key Schottky 30 V 370 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 30 V - 5A - - Through Hole Axial -65°C ~ 125°C
1N5825E3

1N5825E3

DIODE SCHOTTKY 40V 5A AXIAL

Microchip Technology

5,648 -
1N5825E3

数据表

- Axial Bulk Active Schottky 40 V 380 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 40 V - 5A - - Through Hole Axial -65°C ~ 125°C
1N5824E3

1N5824E3

DIODE SCHOTTKY 30V 5A AXIAL

Microchip Technology

4,091 -
1N5824E3

数据表

- Axial Bulk Active Schottky 30 V 370 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 10 mA @ 30 V - 5A - - Through Hole Axial -65°C ~ 125°C
JANS1N3595-1

JANS1N3595-1

DIODE GEN PURP 125V 200MA DO35

Microchip Technology

4,610 -
JANS1N3595-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Standard 125 V 1 V @ 200 mA Small Signal =< 200mA (Io), Any Speed 3 µs 1 nA @ 125 V - 200mA Military MIL-S-19500-241 Through Hole DO-204AH (DO-35) -65°C ~ 175°C
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