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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S25QRDIODE GEN PURP 1.2KV 25A DO220AA GeneSiC Semiconductor |
3,266 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 1200 V | 1.1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | 25A | - | - | Chassis, Stud Mount | - | -65°C ~ 175°C |
|
|
FR6KR05DIODE GEN PURP REV 800V 6A DO4 GeneSiC Semiconductor |
4,582 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 800 V | 1.4 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 25 µA @ 50 V | - | 6A | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
|
|
FR6MR05DIODE GEN PURP REV 1KV 6A DO4 GeneSiC Semiconductor |
8,656 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 1000 V | 1.4 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 25 µA @ 50 V | - | 6A | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
|
GC15MPS12-220DIODE SIL CARB 1.2KV 82A TO220-2 GeneSiC Semiconductor |
9,148 | - |
|
数据表 |
SiC Schottky MPS™ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 14 µA @ 1200 V | 1089pF @ 1V, 1MHz | 82A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GC10MPS12-252DIODE SIL CARB 1.2KV 50A TO252-2 GeneSiC Semiconductor |
5,200 | - |
|
数据表 |
SiC Schottky MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 660pF @ 1V, 1MHz | 50A | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
GB10SLT12-252DIODE SIL CARB 1.2KV 10A TO252 GeneSiC Semiconductor |
6,387 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 2 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 250 µA @ 1200 V | 520pF @ 1V, 1MHz | 10A | - | - | Surface Mount | TO-252 | -55°C ~ 175°C |
|
GB05MPS17-247DIODE SIL CARB 1.7KV 25A TO247-2 GeneSiC Semiconductor |
5,897 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1700 V | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 6 µA @ 1700 V | 334pF @ 1V, 1MHz | 25A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GC15MPS12-247DIODE SIL CARB 1.2KV 75A TO247-2 GeneSiC Semiconductor |
2,366 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 14 µA @ 1200 V | 1089pF @ 1V, 1MHz | 75A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GB05MPS17-263DIODE SIL CARB 1.7KV 18A TO263-7 GeneSiC Semiconductor |
2,207 | - |
|
数据表 |
SiC Schottky MPS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1700 V | - | No Recovery Time > 500mA (Io) | - | - | 470pF @ 1V, 1MHz | 18A | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
|
GD60MPS17HDIODE SIL CARB 1.7KV 122A TO247 GeneSiC Semiconductor |
36 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 1.8 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 40 µA @ 1700 V | 4577pF @ 1V, 1MHz | 122A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
