GeneSiC Semiconductor|二极管阵列 - 页 83

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	二极管配置	技术	电流 - 平均整流 (Io)（每个二极管）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电压 - 直流反向 (Vr)（最大值）	工作温度 - 结点	等级	认证	安装类型	供应商设备封装
UFT14040 DIODE MODULE GP 400V 70A TO249AB GeneSiC Semiconductor	2,767	-	询价单	数据表	-	TO-249AB	Bulk	Obsolete	1 Pair Common Cathode	Standard	70A	1.3 V @ 70 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	25 µA @ 400 V	400 V	-55°C ~ 150°C	-	-	Chassis Mount	TO-249AB
GC2X100MPS06-227 DIODE MOD SIC 650V 209A SOT-227 GeneSiC Semiconductor	8,054	-	询价单	数据表	SiC Schottky MPS™	SOT-227-4, miniBLOC	Tube	Discontinued at Digi-Key	2 Independent	SiC (Silicon Carbide) Schottky	209A (DC)	1.8 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	650 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
GD2X50MPS12N DIODE MOD SIC 1200V 76A SOT-227 GeneSiC Semiconductor	221	-	询价单	数据表	SiC Schottky MPS™	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	76A (DC)	1.8 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	15 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
GD2X25MPS17N DIODE MOD SIC 1700V 50A SOT-227 GeneSiC Semiconductor	184	-	询价单	数据表	SiC Schottky MPS™	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	50A (DC)	1.8 V @ 25 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	1700 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
MBR2X120A045 DIODE MOD SCHOTT 45V 120A SOT227 GeneSiC Semiconductor	308	-	询价单	数据表	-	SOT-227-4, miniBLOC	Bulk	Active	2 Independent	Schottky	120A	700 mV @ 120 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	45 V	-40°C ~ 150°C	-	-	Chassis Mount	SOT-227
GD2X150MPS06N DIODE MOD SIC 650V 150A SOT-227 GeneSiC Semiconductor	418	-	询价单	数据表	SiC Schottky MPS™	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	150A (DC)	1.8 V @ 150 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 650 V	650 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
GD2X75MPS17N DIODE MOD SIC 1700V 115A SOT-227 GeneSiC Semiconductor	214	-	询价单	数据表	SiC Schottky MPS™	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	115A (DC)	-	No Recovery Time > 500mA (Io)	-	-	1700 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
GD2X30MPS12D DIODE ARR SIC 1200V 55A TO247-3 GeneSiC Semiconductor	569	-	询价单	数据表	SiC Schottky MPS™	TO-247-3	Tube	Active	1 Pair Common Cathode	SiC (Silicon Carbide) Schottky	55A (DC)	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 1200 V	1200 V	-55°C ~ 175°C	-	-	Through Hole	TO-247-3
GD2X30MPS12N DIODE MOD SIC 1200V 52A SOT-227 GeneSiC Semiconductor	220	-	询价单	数据表	SiC Schottky MPS™	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	52A (DC)	-	No Recovery Time > 500mA (Io)	-	-	1200 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227
GD2X60MPS06N DIODE MOD SIC 650V 70A SOT-227 GeneSiC Semiconductor	369	-	询价单	数据表	SiC Schottky MPS™	SOT-227-4, miniBLOC	Tube	Active	2 Independent	SiC (Silicon Carbide) Schottky	70A (DC)	1.8 V @ 60 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 650 V	650 V	-55°C ~ 175°C	-	-	Chassis Mount	SOT-227

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