GeneSiC Semiconductor|二极管阵列 - 页 44

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	二极管配置	技术	电流 - 平均整流 (Io)（每个二极管）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电压 - 直流反向 (Vr)（最大值）	工作温度 - 结点	等级	认证	安装类型	供应商设备封装
MUR20010CTR DIODE MODULE GP 100V 100A 2TOWER GeneSiC Semiconductor	2,098	-	询价单	数据表	-	Twin Tower	Bulk	Active	1 Pair Common Anode	Standard	100A	1.3 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	25 µA @ 50 V	100 V	-55°C ~ 150°C	-	-	Chassis Mount	Twin Tower
MUR20020CTR DIODE MODULE GP 200V 100A 2TOWER GeneSiC Semiconductor	6,126	-	询价单	数据表	-	Twin Tower	Bulk	Active	1 Pair Common Anode	Standard	100A	1.3 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	25 µA @ 50 V	200 V	-55°C ~ 150°C	-	-	Chassis Mount	Twin Tower
MUR20040CT DIODE MODULE GP 400V 100A 2TOWER GeneSiC Semiconductor	6,336	-	询价单	数据表	-	Twin Tower	Bulk	Active	1 Pair Common Cathode	Standard	100A	1.3 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 50 V	400 V	-55°C ~ 150°C	-	-	Chassis Mount	Twin Tower
MUR20040CTR DIODE MODULE GP 400V 100A 2TOWER GeneSiC Semiconductor	3,302	-	询价单	数据表	-	Twin Tower	Bulk	Active	1 Pair Common Anode	Standard	100A	1.3 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 50 V	400 V	-55°C ~ 150°C	-	-	Chassis Mount	Twin Tower
MUR20060CT DIODE MODULE GP 600V 100A 2TOWER GeneSiC Semiconductor	3,505	-	询价单	数据表	-	Twin Tower	Bulk	Active	1 Pair Common Cathode	Standard	100A	1.7 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	110 ns	25 µA @ 50 V	600 V	-55°C ~ 150°C	-	-	Chassis Mount	Twin Tower
MUR20060CTR DIODE MODULE GP 600V 100A 2TOWER GeneSiC Semiconductor	5,618	-	询价单	数据表	-	Twin Tower	Bulk	Active	1 Pair Common Anode	Standard	100A	1.7 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	110 ns	25 µA @ 50 V	600 V	-55°C ~ 150°C	-	-	Chassis Mount	Twin Tower
MURT30005 DIODE MODULE GP 50V 150A 3TOWER GeneSiC Semiconductor	7,574	-	询价单	数据表	-	Three Tower	Bulk	Obsolete	1 Pair Common Cathode	Standard	150A	1.3 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	25 µA @ 50 V	50 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MURT30005R DIODE MODULE GP 50V 150A 3TOWER GeneSiC Semiconductor	3,019	-	询价单	数据表	-	Three Tower	Bulk	Obsolete	1 Pair Common Anode	Standard	150A	1.3 V @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	25 µA @ 50 V	50 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MURT20010 DIODE MODULE GP 100V 100A 3TOWER GeneSiC Semiconductor	4,185	-	询价单	数据表	-	Three Tower	Bulk	Active	1 Pair Common Cathode	Standard	100A	1.3 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	25 µA @ 50 V	100 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower
MURT20010R DIODE MODULE GP 100V 100A 3TOWER GeneSiC Semiconductor	8,352	-	询价单	数据表	-	Three Tower	Bulk	Active	1 Pair Common Anode	Standard	100A	1.3 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	25 µA @ 50 V	100 V	-55°C ~ 150°C	-	-	Chassis Mount	Three Tower

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