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二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电压 - 直流反向 (Vr)(最大值) 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电压 - 直流反向 (Vr)(最大值) 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
MURT10005R

MURT10005R

DIODE MODULE GP 50V 50A 3TOWER

GeneSiC Semiconductor

3,782 -
MURT10005R

数据表

- Three Tower Bulk Obsolete 1 Pair Common Anode Standard 50A 1.3 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT10010

MURT10010

DIODE MODULE GP 100V 50A 3TOWER

GeneSiC Semiconductor

8,699 -
MURT10010

数据表

- Three Tower Bulk Obsolete 1 Pair Common Cathode Standard 50A 1.3 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V 100 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT10010R

MURT10010R

DIODE MODULE GP 100V 50A 3TOWER

GeneSiC Semiconductor

6,151 -
MURT10010R

数据表

- Three Tower Bulk Obsolete 1 Pair Common Anode Standard 50A 1.3 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V 100 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT10020

MURT10020

DIODE MODULE GP 200V 50A 3TOWER

GeneSiC Semiconductor

2,658 -
MURT10020

数据表

- Three Tower Bulk Obsolete 1 Pair Common Cathode Standard 50A 1.3 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURT10020R

MURT10020R

DIODE MODULE GP 200V 50A 3TOWER

GeneSiC Semiconductor

8,838 -
MURT10020R

数据表

- Three Tower Bulk Obsolete 1 Pair Common Anode Standard, Reverse Polarity 50A 1.3 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 25 µA @ 50 V 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MBR20030CT

MBR20030CT

DIODE MOD SCHOTT 30V 200A 2TOWER

GeneSiC Semiconductor

2,218 -
MBR20030CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V 30 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR20030CTR

MBR20030CTR

DIODE MOD SCHOTT 30V 200A 2TOWER

GeneSiC Semiconductor

6,574 -
MBR20030CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V 30 V -55°C ~ 150°C - - Chassis Mount Twin Tower
MBR200100CT

MBR200100CT

DIODE MOD SCHOT 100V 200A 2TOWER

GeneSiC Semiconductor

8,219 -
MBR200100CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 200A (DC) 840 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V 100 V - - - Chassis Mount Twin Tower
MBR200100CTR

MBR200100CTR

DIODE MOD SCHOT 100V 200A 2TOWER

GeneSiC Semiconductor

3,373 -
MBR200100CTR

数据表

- Twin Tower Bulk Active 1 Pair Common Anode Schottky 200A (DC) 840 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V 100 V - - - Chassis Mount Twin Tower
MBR20020CT

MBR20020CT

DIODE MOD SCHOTT 20V 200A 2TOWER

GeneSiC Semiconductor

6,209 -
MBR20020CT

数据表

- Twin Tower Bulk Active 1 Pair Common Cathode Schottky 200A (DC) 650 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 20 V 20 V - - - Chassis Mount Twin Tower
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