| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 二极管配置 | 技术 | 电流 - 平均整流 (Io)(每个二极管) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电压 - 直流反向 (Vr)(最大值) | 工作温度 - 结点 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GC2X15MPS12-247DIODE ARR SIC 1200V 75A TO247-3 GeneSiC Semiconductor |
2,805 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-3 | Tube | Obsolete | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 75A (DC) | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 14 µA @ 1200 V | 1200 V | -55°C ~ 175°C | - | - | Through Hole | TO-247-3 |
|
GC2X20MPS12-247DIODE ARR SIC 1200V 90A TO247-3 GeneSiC Semiconductor |
8,207 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-3 | Tube | Obsolete | 1 Pair Common Cathode | SiC (Silicon Carbide) Schottky | 90A (DC) | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 18 µA @ 1200 V | 1200 V | -55°C ~ 175°C | - | - | Through Hole | TO-247-3 |
|
MUR2X030A06DIODE MODULE GP 600V 30A SOT-227 GeneSiC Semiconductor |
6,271 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | 2 Independent | Standard | 30A | 1.5 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 25 µA @ 600 V | 600 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
MUR2X030A10DIODE MODULE GP 1000V 30A SOT227 GeneSiC Semiconductor |
6,646 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | 2 Independent | Standard | 30A | 2.35 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 25 µA @ 1000 V | 1000 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
MUR2X030A12DIODE MODULE GP 1200V 30A SOT227 GeneSiC Semiconductor |
4,415 | - |
|
数据表 |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | 2 Independent | Standard | 30A | 2.35 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 25 µA @ 1200 V | 1200 V | -65°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
GD2X30MPS06NDIODE MOD SIC 650V 42A SOT-227 GeneSiC Semiconductor |
2,052 | - |
|
数据表 |
SiC Schottky MPS™ | SOT-227-4, miniBLOC | Tube | Active | 2 Independent | SiC (Silicon Carbide) Schottky | 42A (DC) | - | No Recovery Time > 500mA (Io) | - | - | 650 V | -55°C ~ 175°C | - | - | Chassis Mount | SOT-227 |
|
UFT7340MDIODE MODULE GP 400V 70A D61-3M GeneSiC Semiconductor |
5,401 | - |
|
数据表 |
- | D61-3M | Bulk | Obsolete | 1 Pair Common Cathode | Standard | 70A | 1.3 V @ 35 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 20 µA @ 400 V | 400 V | -55°C ~ 150°C | - | - | Chassis Mount | D61-3M |
|
MSRT150100ADIODE MOD GP 1000V 150A 3TOWER GeneSiC Semiconductor |
7,265 | - |
|
数据表 |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 150A | 1.2 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | 1000 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
|
MSRT150120ADIODE MOD GP 1200V 150A 3TOWER GeneSiC Semiconductor |
3,698 | - |
|
数据表 |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 150A | 1.2 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | 1200 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |
|
MSRT150140ADIODE MOD GP 1400V 150A 3TOWER GeneSiC Semiconductor |
2,697 | - |
|
数据表 |
- | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 150A | 1.2 V @ 150 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 600 V | 1400 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |