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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
MIC5014BN

MIC5014BN

IC GATE DRVR HI/LOW SIDE 8DIP

Microchip Technology

0 -
MIC5014BN

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side or Low-Side 1 N-Channel MOSFET 2.75V ~ 30V 8-PDIP 0.8V, 2V - Single Non-Inverting - Through Hole - - -40°C ~ 150°C (TJ) -
MIC5018BM4 TR

MIC5018BM4 TR

IC GATE DRVR HIGH-SIDE SOT143

Microchip Technology

0 -
MIC5018BM4 TR

数据表

IttyBitty® TO-253-4, TO-253AA Tape & Reel (TR) Obsolete Not Verified High-Side 1 N-Channel MOSFET 2.7V ~ 9V SOT-143 0.8V, 2.4V - Single Non-Inverting - Surface Mount - - -40°C ~ 85°C (TA) -
MIC5021BN

MIC5021BN

IC GATE DRVR HIGH-SIDE 8DIP

Microchip Technology

0 -
MIC5021BN

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side 1 IGBT, N-Channel MOSFET 12V ~ 36V 8-PDIP 0.8V, 2V - Single Non-Inverting - Through Hole 400ns, 400ns - -40°C ~ 85°C (TA) -
98-0334PBF

98-0334PBF

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies

0 -
98-0334PBF

数据表

- 44-LCC (J-Lead), 32 Leads Tube Obsolete Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 10V ~ 20V 44-PLCC, 32 Leads (16.58x16.58) 0.8V, 2.5V 200mA, 350mA 3-Phase Inverting 600 V Surface Mount 125ns, 50ns - -40°C ~ 150°C (TJ) -
IR2112-1PBF

IR2112-1PBF

IC GATE DRVR HI/LOW SIDE 14DIP

Infineon Technologies

0 -
IR2112-1PBF

数据表

- 14-DIP (0.300", 7.62mm), 13 Leads Tube Obsolete Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-PDIP 6V, 9.5V 250mA, 500mA Independent Non-Inverting 600 V Through Hole 80ns, 40ns - -40°C ~ 150°C (TJ) -
98-0119PBF

98-0119PBF

IC GATE DRVR HALF-BRIDGE 16DIP

Infineon Technologies

0 -
98-0119PBF

数据表

- 16-DIP (0.300", 7.62mm), 14 Leads Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 16-PDIP 6V, 9.5V 2A, 2A Independent Non-Inverting 600 V Through Hole 25ns, 17ns - -40°C ~ 150°C (TJ) -
IR2110-2PBF

IR2110-2PBF

IC GATE DRVR HALF-BRIDGE 16DIP

Infineon Technologies

0 -
IR2110-2PBF

数据表

- 16-DIP (0.300", 7.62mm), 14 Leads Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 16-PDIP 6V, 9.5V 2A, 2A Independent Non-Inverting 500 V Through Hole 25ns, 17ns - -40°C ~ 150°C (TJ) -
IR21362STRPBF

IR21362STRPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies

0 -
IR21362STRPBF

数据表

- 28-SOIC (0.295", 7.50mm Width) Tape & Reel (TR) Obsolete Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 11.5V ~ 20V 28-SOIC 0.8V, 3V 200mA, 350mA 3-Phase Inverting, Non-Inverting 600 V Surface Mount 125ns, 50ns - -40°C ~ 150°C (TJ) -
IR2135STRPBF

IR2135STRPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies

0 -
IR2135STRPBF

数据表

- 28-SOIC (0.295", 7.50mm Width) Tape & Reel (TR) Obsolete Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 10V ~ 20V 28-SOIC 0.8V, 2.2V 250mA, 500mA 3-Phase Inverting 600 V Surface Mount 90ns, 40ns - 125°C (TJ) -
IR2112-2PBF

IR2112-2PBF

IC GATE DRVR HI/LOW SIDE 16DIP

Infineon Technologies

0 -
IR2112-2PBF

数据表

- 16-DIP (0.300", 7.62mm), 14 Leads Tube Obsolete Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 10V ~ 20V 16-PDIP 6V, 9.5V 250mA, 500mA Independent Non-Inverting 600 V Through Hole 80ns, 40ns - -40°C ~ 150°C (TJ) -
IR2113-1PBF

IR2113-1PBF

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

0 -
IR2113-1PBF

数据表

- 14-DIP (0.300", 7.62mm), 13 Leads Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 14-PDIP 6V, 9.5V 2A, 2A Independent Non-Inverting 600 V Through Hole 25ns, 17ns - -40°C ~ 150°C (TJ) -
ISL6207CBZ

ISL6207CBZ

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
ISL6207CBZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 4.5V ~ 5.5V 8-SOIC 1V, 2V 2A, 2A Synchronous Non-Inverting 36 V Surface Mount 8ns, 8ns - -10°C ~ 125°C (TJ) -
ISL6605CBZ

ISL6605CBZ

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
ISL6605CBZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 4.5V ~ 5.5V 8-SOIC 1V, 2V 2A, 2A Synchronous Non-Inverting 33 V Surface Mount 8ns, 8ns - 0°C ~ 125°C (TJ) -
ISL6605IBZ

ISL6605IBZ

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
ISL6605IBZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 4.5V ~ 5.5V 8-SOIC 1V, 2V 2A, 2A Synchronous Non-Inverting 33 V Surface Mount 8ns, 8ns - -40°C ~ 125°C (TJ) -
ISL6612BCBZ

ISL6612BCBZ

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
ISL6612BCBZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 7V ~ 13.2V 8-SOIC - 1.25A, 2A Synchronous Non-Inverting 36 V Surface Mount 26ns, 18ns - 0°C ~ 125°C (TJ) -
ISL6612CBZ

ISL6612CBZ

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
ISL6612CBZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 10.8V ~ 13.2V 8-SOIC - 1.25A, 2A Synchronous Non-Inverting 36 V Surface Mount 26ns, 18ns - 0°C ~ 125°C (TJ) -
ISL6614CRZ

ISL6614CRZ

IC GATE DRVR HALF-BRIDGE 16QFN

Renesas Electronics Corporation

0 -
ISL6614CRZ

数据表

- 16-VQFN Exposed Pad Tube Obsolete Not Verified Half-Bridge 4 N-Channel MOSFET 10.8V ~ 13.2V 16-QFN (4x4) - 1.25A, 2A Synchronous Non-Inverting 36 V Surface Mount 26ns, 18ns - 0°C ~ 125°C (TJ) -
IR2133JPBF

IR2133JPBF

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies

0 -
IR2133JPBF

数据表

- 44-LCC (J-Lead), 32 Leads Tube Obsolete Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 10V ~ 20V 44-PLCC, 32 Leads (16.58x16.58) 0.8V, 2.2V 250mA, 500mA 3-Phase Inverting 600 V Surface Mount 90ns, 40ns - 125°C (TJ) -
IR2136JPBF

IR2136JPBF

IC GATE DRVR HALF-BRIDGE 44PLCC

Infineon Technologies

0 -
IR2136JPBF

数据表

- 44-LCC (J-Lead), 32 Leads Tube Obsolete Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 10V ~ 20V 44-PLCC, 32 Leads (16.58x16.58) 0.8V, 3V 200mA, 350mA 3-Phase Inverting 600 V Surface Mount 125ns, 50ns - -40°C ~ 150°C (TJ) -
IX6R11S6

IX6R11S6

IC GATE DRVR HALF-BRIDGE 18SOIC

IXYS

0 -
IX6R11S6

数据表

- 18-SOIC (0.295", 7.50mm Width) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 35V 18-SOIC 6V, 9.6V 6A, 6A Independent Non-Inverting 600 V Surface Mount 25ns, 17ns - -40°C ~ 125°C (TA) -
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