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制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
IR2103SPBF

IR2103SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
IR2103SPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 3V 210mA, 360mA Independent Inverting, Non-Inverting 600 V Surface Mount 100ns, 50ns - -40°C ~ 150°C (TJ) -
IR21363SPBF

IR21363SPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies

0 -
IR21363SPBF

数据表

- 28-SOIC (0.295", 7.50mm Width) Tube Obsolete Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 12V ~ 20V 28-SOIC 0.8V, 3V 200mA, 350mA 3-Phase Inverting 600 V Surface Mount 125ns, 50ns - -40°C ~ 150°C (TJ) -
IR2308SPBF

IR2308SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
IR2308SPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 2.9V 200mA, 350mA Independent Non-Inverting 600 V Surface Mount 150ns, 50ns - -40°C ~ 150°C (TJ) -
IR2106PBF

IR2106PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IR2106PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.9V 200mA, 350mA Independent Non-Inverting 600 V Through Hole 150ns, 50ns - -40°C ~ 150°C (TJ) -
IR21365SPBF

IR21365SPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies

0 -
IR21365SPBF

数据表

- 28-SOIC (0.295", 7.50mm Width) Tube Obsolete Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 12V ~ 20V 28-SOIC 0.8V, 3V 200mA, 350mA 3-Phase Inverting 600 V Surface Mount 125ns, 50ns - -40°C ~ 150°C (TJ) -
IR2135SPBF

IR2135SPBF

IC GATE DRVR HALF-BRIDGE 28SOIC

Infineon Technologies

0 -
IR2135SPBF

数据表

- 28-SOIC (0.295", 7.50mm Width) Tube Obsolete Not Verified Half-Bridge 6 IGBT, N-Channel MOSFET 10V ~ 20V 28-SOIC 0.8V, 2.2V 250mA, 500mA 3-Phase Inverting 600 V Surface Mount 90ns, 40ns - 125°C (TJ) -
IR21084SPBF

IR21084SPBF

IC GATE DRVR HALF-BRIDGE 14SOIC

Infineon Technologies

0 -
IR21084SPBF

数据表

- 14-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-SOIC 0.8V, 2.9V 200mA, 350mA Independent Non-Inverting 600 V Surface Mount 150ns, 50ns - -40°C ~ 150°C (TJ) -
IR2302PBF

IR2302PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IR2302PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 5V ~ 20V 8-PDIP 0.8V, 2.9V 200mA, 350mA Synchronous Non-Inverting 600 V Through Hole 130ns, 50ns - -40°C ~ 150°C (TJ) -
IR2308PBF

IR2308PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IR2308PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.9V 200mA, 350mA Independent Non-Inverting 600 V Through Hole 150ns, 50ns - -40°C ~ 150°C (TJ) -
IR21064PBF

IR21064PBF

IC GATE DRVR HI/LOW SIDE 14DIP

Infineon Technologies

0 -
IR21064PBF

数据表

- 14-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-DIP 0.8V, 2.9V 200mA, 350mA Independent Non-Inverting 600 V Through Hole 150ns, 50ns - -40°C ~ 150°C (TJ) -
IR2108PBF

IR2108PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IR2108PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.9V 200mA, 350mA Independent Non-Inverting 600 V Through Hole 150ns, 50ns - -40°C ~ 150°C (TJ) -
IR21091SPBF

IR21091SPBF

IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon Technologies

0 -
IR21091SPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-SOIC 0.8V, 2.9V 200mA, 350mA Synchronous Non-Inverting 600 V Surface Mount 150ns, 50ns - -40°C ~ 150°C (TJ) -
IR21091PBF

IR21091PBF

IC GATE DRVR HALF-BRIDGE 8DIP

Infineon Technologies

0 -
IR21091PBF

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 8-PDIP 0.8V, 2.9V 200mA, 350mA Synchronous Non-Inverting 600 V Through Hole 150ns, 50ns - -40°C ~ 150°C (TJ) -
IR21814PBF

IR21814PBF

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

0 -
IR21814PBF

数据表

- 14-DIP (0.300", 7.62mm) Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-DIP 0.8V, 2.7V 1.9A, 2.3A Independent Non-Inverting 600 V Through Hole 40ns, 20ns - -40°C ~ 150°C (TJ) -
IXDI402SI

IXDI402SI

IC GATE DRVR LOW-SIDE 8SOIC

IXYS

0 -
IXDI402SI

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V 8-SOIC 0.8V, 3V 2A, 2A Independent Inverting - Surface Mount 8ns, 8ns - -55°C ~ 150°C (TJ) -
TD350IDT

TD350IDT

IC GATE DRVR HIGH-SIDE 14SO

STMicroelectronics

0 -
TD350IDT

数据表

- 14-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete Not Verified High-Side 1 IGBT, N-Channel MOSFET 12V ~ 26V 14-SO 0.8V, 4.2V 1.5A, 2.3A Single Non-Inverting - Surface Mount 130ns, 75ns (Max) - -40°C ~ 150°C (TJ) -
LM5111-3M/NOPB

LM5111-3M/NOPB

IC GATE DRVR LOW-SIDE 8SOIC

Texas Instruments

0 -
LM5111-3M/NOPB

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete Not Verified Low-Side 2 N-Channel MOSFET 3.5V ~ 14V 8-SOIC 0.8V, 2.2V 3A, 5A Independent Inverting, Non-Inverting - Surface Mount 14ns, 12ns - -40°C ~ 125°C (TJ) -
ADP3418KRZ

ADP3418KRZ

IC GATE DRVR HALF-BRIDGE 10MSOP

onsemi

0 -
ADP3418KRZ

数据表

- - Tube Obsolete - Half-Bridge - - - 10-MSOP - - - - - - - - - -
IR2110-1PBF

IR2110-1PBF

IC GATE DRVR HALF-BRIDGE 14DIP

Infineon Technologies

0 -
IR2110-1PBF

数据表

- 14-DIP (0.300", 7.62mm), 13 Leads Tube Obsolete Not Verified Half-Bridge 2 IGBT, N-Channel MOSFET 3.3V ~ 20V 14-PDIP 6V, 9.5V 2A, 2A Independent Non-Inverting 500 V Through Hole 25ns, 17ns - -40°C ~ 150°C (TJ) -
IXDD409YI

IXDD409YI

IC GATE DRVR LOW-SIDE TO263

IXYS

0 -
IXDD409YI

数据表

- TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Tube Obsolete Not Verified Low-Side 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 35V TO-263-5 0.8V, 3.5V 9A, 9A Single Non-Inverting - Surface Mount 10ns, 10ns - -55°C ~ 150°C (TJ) -
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