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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
IR2011

IR2011

IC GATE DRVR HI/LOW SIDE 8DIP

Infineon Technologies

0 -
IR2011

数据表

- 8-DIP (0.300", 7.62mm) Tube Obsolete Not Verified High-Side or Low-Side 2 N-Channel MOSFET 10V ~ 20V 8-PDIP 0.7V, 2.2V 1A, 1A Independent Inverting 200 V Through Hole 35ns, 20ns - -40°C ~ 150°C (TJ) -
IR2011S

IR2011S

IC GATE DRVR HI/LOW SIDE 8SOIC

Infineon Technologies

0 -
IR2011S

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified High-Side or Low-Side 2 N-Channel MOSFET 10V ~ 20V 8-SOIC 0.7V, 2.2V 1A, 1A Independent Inverting 200 V Surface Mount 35ns, 20ns - -40°C ~ 150°C (TJ) -
IR2011STR

IR2011STR

IC GATE DRVR HI/LOW SIDE 8SOIC

Infineon Technologies

0 -
IR2011STR

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete Not Verified High-Side or Low-Side 2 N-Channel MOSFET 10V ~ 20V 8-SOIC 0.7V, 2.2V 1A, 1A Independent Inverting 200 V Surface Mount 35ns, 20ns - -40°C ~ 150°C (TJ) -
HIP2100IB

HIP2100IB

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
HIP2100IB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 14V 8-SOIC 4V, 7V 2A, 2A Independent Non-Inverting 114 V Surface Mount 10ns, 10ns - -55°C ~ 150°C (TJ) -
HIP2100IR

HIP2100IR

IC GATE DRVR HALF-BRIDGE 16QFN

Renesas Electronics Corporation

0 -
HIP2100IR

数据表

- 16-VQFN Exposed Pad Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 14V 16-QFN (5x5) 4V, 7V 2A, 2A Independent Non-Inverting 114 V Surface Mount 10ns, 10ns - -55°C ~ 150°C (TJ) -
HIP2101IB

HIP2101IB

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
HIP2101IB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 14V 8-SOIC 0.8V, 2.2V 2A, 2A Independent Non-Inverting 114 V Surface Mount 10ns, 10ns - -55°C ~ 150°C (TJ) -
HIP2101IR

HIP2101IR

IC GATE DRVR HALF-BRIDGE 16QFN

Renesas Electronics Corporation

0 -
HIP2101IR

数据表

- 16-VQFN Exposed Pad Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 14V 16-QFN (5x5) 0.8V, 2.2V 2A, 2A Independent Non-Inverting 114 V Surface Mount 10ns, 10ns - -55°C ~ 150°C (TJ) -
HIP6601BCB

HIP6601BCB

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
HIP6601BCB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 10.8V ~ 13.2V 8-SOIC - - Synchronous Non-Inverting 15 V Surface Mount 20ns, 20ns - 0°C ~ 125°C (TJ) -
ISL6605IB

ISL6605IB

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
ISL6605IB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 4.5V ~ 5.5V 8-SOIC 1V, 2V 2A, 2A Synchronous Non-Inverting 33 V Surface Mount 8ns, 8ns - -40°C ~ 125°C (TJ) -
ISL6608IB

ISL6608IB

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
ISL6608IB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 4.5V ~ 5.5V 8-SOIC - 2A, 2A Synchronous Non-Inverting 22 V Surface Mount 8ns, 8ns - -40°C ~ 125°C (TJ) -
ISL6612IB

ISL6612IB

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
ISL6612IB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 10.8V ~ 13.2V 8-SOIC - 1.25A, 2A Synchronous Non-Inverting 36 V Surface Mount 26ns, 18ns - -40°C ~ 125°C (TJ) -
ISL6700IB

ISL6700IB

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
ISL6700IB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 15V 8-SOIC 0.8V, 2.2V 1.4A, 1.3A Independent Non-Inverting 80 V Surface Mount 5ns, 5ns - -40°C ~ 125°C (TJ) -
ISL6700IR

ISL6700IR

IC GATE DRVR HALF-BRIDGE 12QFN

Renesas Electronics Corporation

0 -
ISL6700IR

数据表

- 12-VQFN Exposed Pad Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 15V 12-QFN (4x4) 0.8V, 2.2V 1.4A, 1.3A Independent Non-Inverting 80 V Surface Mount 5ns, 5ns - -40°C ~ 125°C (TJ) -
ISL6801AB

ISL6801AB

IC GATE DRVR HIGH-SIDE 8SOIC

Renesas Electronics Corporation

0 -
ISL6801AB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified High-Side 1 N-Channel MOSFET 4.5V ~ 6.5V 8-SOIC 1.4V, 3V 200mA, 200mA Independent Non-Inverting 120 V Surface Mount 200ns, 200ns - -40°C ~ 150°C (TJ) -
HIP2100IBT

HIP2100IBT

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
HIP2100IBT

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 14V 8-SOIC 4V, 7V 2A, 2A Independent Non-Inverting 114 V Surface Mount 10ns, 10ns - -55°C ~ 150°C (TJ) -
HIP2101IBT

HIP2101IBT

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
HIP2101IBT

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 14V 8-SOIC 0.8V, 2.2V 2A, 2A Independent Non-Inverting 114 V Surface Mount 10ns, 10ns - -55°C ~ 150°C (TJ) -
HIP6601BCBZ

HIP6601BCBZ

IC GATE DRVR HALF-BRIDGE 8SOIC

Renesas Electronics Corporation

0 -
HIP6601BCBZ

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified Half-Bridge 2 N-Channel MOSFET 10.8V ~ 13.2V 8-SOIC - - Synchronous Non-Inverting 15 V Surface Mount 20ns, 20ns - 0°C ~ 125°C (TJ) -
HIP6602BCB-T

HIP6602BCB-T

IC GATE DRVR HALF-BRIDGE 14SOIC

Renesas Electronics Corporation

0 -
HIP6602BCB-T

数据表

- 14-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete Not Verified Half-Bridge 4 N-Channel MOSFET 10.8V ~ 13.2V 14-SOIC - - Synchronous Non-Inverting 15 V Surface Mount 20ns, 20ns - 0°C ~ 125°C (TJ) -
IR21064SPBF

IR21064SPBF

IC GATE DRVR HI/LOW SIDE 14SOIC

Infineon Technologies

0 -
IR21064SPBF

数据表

- 14-SOIC (0.154", 3.90mm Width) Tube Obsolete Not Verified High-Side or Low-Side 2 IGBT, N-Channel MOSFET 10V ~ 20V 14-SOIC 0.8V, 2.9V 200mA, 350mA Independent Non-Inverting 600 V Surface Mount 150ns, 50ns - -40°C ~ 150°C (TJ) -
IXDN430MYI

IXDN430MYI

IC GATE DRVR LOW-SIDE TO263

IXYS

0 -
IXDN430MYI

数据表

- TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Box Obsolete Not Verified Low-Side 1 IGBT, N-Channel, P-Channel MOSFET 8.5V ~ 35V TO-263-5 0.8V, 3.5V 30A, 30A Single Non-Inverting - Surface Mount 18ns, 16ns - -55°C ~ 150°C (TJ) -
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