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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
TC4421ESM

TC4421ESM

IC GATE DRVR LOW-SIDE 8SOIJ

Microchip Technology

72 -
TC4421ESM

数据表

- 8-SOIC (0.209", 5.30mm Width) Tube Active Not Verified Low-Side 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-SOIJ 0.8V, 2.4V 9A, 9A Single Inverting - Surface Mount 60ns, 60ns - -40°C ~ 150°C (TJ) -
MIC4468ZWM

MIC4468ZWM

IC GATE DRVR LOW-SIDE 16SOIC

Microchip Technology

46 -
MIC4468ZWM

数据表

- 16-SOIC (0.295", 7.50mm Width) Tube Active Not Verified Low-Side 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 16-SOIC 0.8V, 2.4V 1.2A, 1.2A Independent Non-Inverting - Surface Mount 14ns, 13ns - 0°C ~ 70°C (TA) -
TC4469EOE

TC4469EOE

IC GATE DRVR LOW-SIDE 16SOIC

Microchip Technology

51 -
TC4469EOE

数据表

- 16-SOIC (0.295", 7.50mm Width) Tube Active Not Verified Low-Side 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 16-SOIC 0.8V, 2.4V 1.2A, 1.2A Independent Inverting, Non-Inverting - Surface Mount 15ns, 15ns - -40°C ~ 150°C (TJ) -
TC4467EOE

TC4467EOE

IC GATE DRVR LOW-SIDE 16SOIC

Microchip Technology

35 -
TC4467EOE

数据表

- 16-SOIC (0.295", 7.50mm Width) Tube Active Not Verified Low-Side 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 16-SOIC 0.8V, 2.4V 1.2A, 1.2A Independent Inverting - Surface Mount 15ns, 15ns - -40°C ~ 150°C (TJ) -
TC4420IJA

TC4420IJA

IC GATE DRVR LOW-SIDE 8CERDIP

Microchip Technology

18 -
TC4420IJA

数据表

- 8-CDIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 1 N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-CERDIP 0.8V, 2.4V 6A, 6A Single Non-Inverting - Through Hole 25ns, 25ns - -25°C ~ 150°C (TJ) -
TC426MJA

TC426MJA

IC GATE DRVR LOW-SIDE 8CERDIP

Microchip Technology

56 -
TC426MJA

数据表

- 8-CDIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-CERDIP 0.8V, 2.4V 1.5A, 1.5A Independent Inverting - Through Hole 30ns, 30ns - -55°C ~ 125°C (TA) -
2ASC-12A2HP

2ASC-12A2HP

IC GATE DRVR HALF-BRIDGE MODULE

Microchip Technology

5 -
2ASC-12A2HP

数据表

- 30-DIP Module Bulk Active Not Verified Half-Bridge 2 IGBT, SiC MOSFET 14V ~ 16V Module 1.25V, 3.5V 10A, 10A Synchronous Non-Inverting - Through Hole 80ns, 90ns - -40°C ~ 85°C -
MIC4100YM

MIC4100YM

IC GATE DRVR HALF-BRIDGE 8SOIC

Microchip Technology

36 -
MIC4100YM

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 16V 8-SOIC 3V, 8V 2A, 2A Independent Non-Inverting 118 V Surface Mount 400ns, 400ns - -40°C ~ 125°C (TJ) -
MCP14E11-E/P

MCP14E11-E/P

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

26 -
MCP14E11-E/P

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-PDIP 0.8V, 2.4V 3A, 3A Independent Inverting, Non-Inverting - Through Hole 25ns, 25ns - -40°C ~ 150°C (TJ) -
MCP14E7-E/P

MCP14E7-E/P

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

94 -
MCP14E7-E/P

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 2 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-PDIP 0.8V, 2.4V 2A, 2A Independent Non-Inverting - Through Hole 12ns, 15ns - -40°C ~ 150°C (TJ) -
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