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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
TC4627COE

TC4627COE

IC GATE DRVR HI/LOW SIDE 16SOIC

Microchip Technology

280 -
TC4627COE

数据表

- 16-SOIC (0.295", 7.50mm Width) Tube Active Not Verified High-Side or Low-Side 1 N-Channel, P-Channel MOSFET 4V ~ 6V 16-SOIC 0.8V, 2.4V 1.5A, 1.5A Single Non-Inverting - Surface Mount 33ns, 27ns - 0°C ~ 70°C (TA) -
TC4627CPA

TC4627CPA

IC GATE DRVR HI/LOW SIDE 8DIP

Microchip Technology

218 -
TC4627CPA

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified High-Side or Low-Side 1 N-Channel, P-Channel MOSFET 4V ~ 6V 8-PDIP 0.8V, 2.4V 1.5A, 1.5A Single Non-Inverting - Through Hole 33ns, 27ns - 0°C ~ 70°C (TA) -
MIC4424ZWM

MIC4424ZWM

DUAL 3A-PEAK LOW-SIDE MOSFET DRI

Microchip Technology

2,544 -
MIC4424ZWM

数据表

- 16-SOIC (0.295", 7.50mm Width) Bulk Active Not Verified Low-Side 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 16-SOIC 0.8V, 2.4V 3A, 3A Independent Non-Inverting - Surface Mount 28ns, 32ns - 0°C ~ 150°C (TJ) -
MIC4425YWM

MIC4425YWM

DUAL 3A-PEAK LOW-SIDE MOSFET DRI

Microchip Technology

4,915 -
MIC4425YWM

数据表

- 16-SOIC (0.295", 7.50mm Width) Bulk Active Not Verified Low-Side 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 16-SOIC 0.8V, 2.4V 3A, 3A Independent Inverting, Non-Inverting - Surface Mount 28ns, 32ns - -40°C ~ 150°C (TJ) -
MIC4469ZWMTR

MIC4469ZWMTR

QUAD 1.2A-PEAK LOW-SIDE MOSFET D

Microchip Technology

1,280 -
MIC4469ZWMTR

数据表

- 16-SOIC (0.295", 7.50mm Width) Bulk Active Not Verified Low-Side 4 N-Channel, P-Channel MOSFET 4.5V ~ 18V 16-SOIC 0.8V, 2.4V 1.2A, 1.2A Independent Inverting, Non-Inverting - Surface Mount 14ns, 13ns - 0°C ~ 70°C (TA) -
MIC4423ZWM

MIC4423ZWM

DUAL 3A-PEAK LOW-SIDE MOSFET DRI

Microchip Technology

1,653 -
MIC4423ZWM

数据表

- 16-SOIC (0.295", 7.50mm Width) Bulk Active Not Verified Low-Side 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 16-SOIC 0.8V, 2.4V 3A, 3A Independent Inverting - Surface Mount 28ns, 32ns - 0°C ~ 150°C (TJ) -
MIC4104YM

MIC4104YM

IC GATE DRVR HALF-BRIDGE 8SOIC

Microchip Technology

100 -
MIC4104YM

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Half-Bridge 2 N-Channel MOSFET 9V ~ 16V 8-SOIC 0.8V, 2.2V 2A, 3A Independent Non-Inverting 118 V Surface Mount 10ns, 6ns - -40°C ~ 125°C (TJ) -
TC4431EOA

TC4431EOA

IC GATE DRVR HI/LOW SIDE 8SOIC

Microchip Technology

50 -
TC4431EOA

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified High-Side or Low-Side 1 N-Channel, P-Channel MOSFET 4.5V ~ 30V 8-SOIC 0.8V, 2.4V 1.5A, 1.5A Single Inverting - Surface Mount 25ns, 33ns - -40°C ~ 150°C (TJ) -
2ASC-17A1HP

2ASC-17A1HP

IC GATE DRVR HALF-BRIDGE MODULE

Microchip Technology

17 -
2ASC-17A1HP

数据表

- Module Bulk Active Verified Half-Bridge 1 SiC MOSFET - Module - - Single - 1700 V Through Hole - - - -
MCP14628-E/SN

MCP14628-E/SN

IC GATE DRVR HALF-BRIDGE 8SOIC

Microchip Technology

58 -
MCP14628-E/SN

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified Half-Bridge 2 N-Channel MOSFET 4.5V ~ 5.5V 8-SOIC 0.5V, 2V 2A, 2A Synchronous Non-Inverting 36 V Surface Mount 10ns, 10ns - -40°C ~ 125°C (TJ) -
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