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栅极驱动器

制造商 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 可编程 驱动配置 驱动器数量 门类型 电压 - 电源 供应商设备封装 逻辑电压 - VIL, VIH 电流 - 峰值输出(源,吸) 通道类型 输入类型 高侧电压 - 最大值(自举) 安装类型 上升/下降时间(典型值) 认证 工作温度 等级
TC429CPA

TC429CPA

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

58 -
TC429CPA

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 1 N-Channel, P-Channel MOSFET 7V ~ 18V 8-PDIP 0.8V, 2.4V 6A, 6A Single Inverting - Through Hole 23ns, 25ns - 0°C ~ 150°C (TJ) -
MIC4422AZN

MIC4422AZN

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

79 -
MIC4422AZN

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 1 N-Channel MOSFET 4.5V ~ 18V 8-PDIP 0.8V, 3V 9A, 9A Single Non-Inverting - Through Hole 20ns, 24ns - 0°C ~ 150°C (TJ) -
MIC4422AYN

MIC4422AYN

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

48 -
MIC4422AYN

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 1 N-Channel MOSFET 4.5V ~ 18V 8-PDIP 0.8V, 3V 9A, 9A Single Non-Inverting - Through Hole 20ns, 24ns - -40°C ~ 150°C (TJ) -
TC4423COE

TC4423COE

IC GATE DRVR LOW-SIDE 16SOIC

Microchip Technology

96 -
TC4423COE

数据表

- 16-SOIC (0.295", 7.50mm Width) Tube Active Not Verified Low-Side 2 N-Channel, P-Channel MOSFET 4.5V ~ 18V 16-SOIC 0.8V, 2.4V 3A, 3A Independent Inverting - Surface Mount 23ns, 25ns - 0°C ~ 150°C (TJ) -
TC4432VOA

TC4432VOA

IC GATE DRVR HI/LOW SIDE 8SOIC

Microchip Technology

56 -
TC4432VOA

数据表

- 8-SOIC (0.154", 3.90mm Width) Tube Active Not Verified High-Side or Low-Side 1 N-Channel, P-Channel MOSFET 4.5V ~ 30V 8-SOIC 0.8V, 2.4V 1.5A, 1.5A Single Non-Inverting - Surface Mount 25ns, 33ns - -40°C ~ 150°C (TJ) -
MIC4421ZT

MIC4421ZT

IC GATE DRVR LOW-SIDE TO220-5

Microchip Technology

33 -
MIC4421ZT

数据表

- TO-220-5 Tube Active Not Verified Low-Side 1 IGBT, N-Channel MOSFET 4.5V ~ 18V TO-220-5 0.8V, 2.4V 9A, 9A Single Inverting - Through Hole 20ns, 24ns - 0°C ~ 150°C (TJ) -
TC4421CPA

TC4421CPA

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

30 -
TC4421CPA

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-PDIP 0.8V, 2.4V 9A, 9A Single Inverting - Through Hole 60ns, 60ns - 0°C ~ 150°C (TJ) -
TC4432VPA

TC4432VPA

IC GATE DRVR HI/LOW SIDE 8DIP

Microchip Technology

64 -
TC4432VPA

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified High-Side or Low-Side 1 N-Channel, P-Channel MOSFET 4.5V ~ 30V 8-PDIP 0.8V, 2.4V 1.5A, 1.5A Single Non-Inverting - Through Hole 25ns, 33ns - -40°C ~ 150°C (TJ) -
TC4421EPA

TC4421EPA

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

97 -
TC4421EPA

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-PDIP 0.8V, 2.4V 9A, 9A Single Inverting - Through Hole 60ns, 60ns - -40°C ~ 150°C (TJ) -
TC4422EPA

TC4422EPA

IC GATE DRVR LOW-SIDE 8DIP

Microchip Technology

95 -
TC4422EPA

数据表

- 8-DIP (0.300", 7.62mm) Tube Active Not Verified Low-Side 1 IGBT, N-Channel, P-Channel MOSFET 4.5V ~ 18V 8-PDIP 0.8V, 2.4V 9A, 9A Single Non-Inverting - Through Hole 60ns, 60ns - -40°C ~ 150°C (TJ) -
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