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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
AOK20B65M2

AOK20B65M2

IGBT 650V 20A TO247

Alpha & Omega Semiconductor Inc.

73 -
AOK20B65M2

数据表

Alpha IGBT™ TO-247-3 Tube Active - 650 V 60 A 2.15V @ 15V, 20A 227 W Through Hole 580µJ (on), 280µJ (off) Standard 40 A 46 nC 26ns/123ns - 400V, 20A, 15Ohm, 15V TO-247 - 292 ns -55°C ~ 175°C (TJ)
STGW20V60F

STGW20V60F

IGBT 600V 40A 167W TO247

STMicroelectronics

72 -
STGW20V60F

数据表

- TO-247-3 Tube Active Trench Field Stop 600 V 80 A 2.2V @ 15V, 20A 167 W Through Hole 200µJ (on), 130µJ (off) Standard 40 A 116 nC 38ns/149ns - 400V, 20A, 15V TO-247 - - -55°C ~ 175°C (TJ)
RJP60F5DPK-01#T0

RJP60F5DPK-01#T0

IGBT 600V 80A TO3P

Renesas Electronics Corporation

79 -
RJP60F5DPK-01#T0

数据表

- TO-3P-3, SC-65-3 Tube Active - 600 V 160 A 1.8V @ 15V, 40A 260.4 W Through Hole - Standard 80 A 74 nC 53ns/90ns - 400V, 30A, 5Ohm, 15V TO-3P - - 150°C (TJ)
STGFW20H65FB

STGFW20H65FB

IGBT 650V 40A 52W TO3PF

STMicroelectronics

205 -
STGFW20H65FB

数据表

- TO-3PFM, SC-93-3 Tube Obsolete Trench Field Stop 650 V 80 A 2V @ 15V, 20A 52 W Through Hole 77µJ (on), 170µJ (off) Standard 40 A 120 nC 30ns/139ns - 400V, 20A, 10Ohm, 15V TO-3PF - - -55°C ~ 175°C (TJ)
HGTP20N60C3R

HGTP20N60C3R

40A, 600V, RUGGED N-CHANNEL IGBT

Harris Corporation

79 -
HGTP20N60C3R

数据表

- TO-220-3 Bulk Active - 600 V 300 A 1.8V @ 15V, 20A 164 W Through Hole 500µJ (on), 500µJ (off) Standard 45 A 122 nC 28ns/151ns - 480V, 20A, 10Ohm, 15V TO-220 - 24 ns -55°C ~ 150°C (TJ)
RJP60F4DPM-00#T1

RJP60F4DPM-00#T1

IGBT TRENCH 600V 60A TO3PFM

Renesas Electronics Corporation

78 -
RJP60F4DPM-00#T1

数据表

- TO-220-3 Full Pack Tube Active Trench 600 V - 1.82V @ 15V, 30A 41.2 W Through Hole - Standard 60 A - 45ns/70ns - 400V, 30A, 5Ohm, 15V TO-3PFM - - 150°C (TJ)
RGTH00TS65GC11

RGTH00TS65GC11

IGBT TRNCH FIELD 650V 85A TO247N

Rohm Semiconductor

44 -
RGTH00TS65GC11

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 200 A 2.1V @ 15V, 50A 277 W Through Hole - Standard 85 A 94 nC 39ns/143ns - 400V, 50A, 10Ohm, 15V TO-247N - - -40°C ~ 175°C (TJ)
NGTB35N60FL2WG

NGTB35N60FL2WG

IGBT TRENCH/FS 600V 70A TO247

onsemi

3,054 -
NGTB35N60FL2WG

数据表

- TO-247-3 Tube Obsolete Trench Field Stop 600 V 120 A 2V @ 15V, 35A 300 W Through Hole 840µJ (on), 280µJ (off) Standard 70 A 125 nC 72ns/132ns - 400V, 35A, 10Ohm, 15V TO-247-3 - 68 ns -55°C ~ 175°C (TJ)
HGTG30N60B3_NL

HGTG30N60B3_NL

IGBT, 60A, 600V, N-CHANNEL

Fairchild Semiconductor

51 -
HGTG30N60B3_NL

数据表

- TO-247-3 Bulk Active NPT 600 V 220 A 1.9V @ 15V, 30A 208 W Through Hole 550µJ (on), 680µJ (off) Standard 60 A 250 nC 36ns/137ns - 480V, 60A, 3Ohm, 15V TO-247 - - -55°C ~ 150°C (TJ)
HGTG40N60C3

HGTG40N60C3

75A, 600V, N-CHANNEL IGBT

Harris Corporation

89 -
HGTG40N60C3

数据表

- TO-247-3 Bulk Active - 600 V 300 A 1.8V @ 15V, 40A 291 W Through Hole 850mJ (on), 1mJ (off) Standard 75 A 395 nC 47ns/185ns - 480V, 40A, 3Ohm, 15V TO-247 - - -55°C ~ 150°C (TJ)
HGTG27N60C3DR

HGTG27N60C3DR

UFS SERIES N-CHANNEL IGBT

Harris Corporation

68 -
HGTG27N60C3DR

数据表

- TO-247-3 Bulk Active - 600 V 108 A 2.2V @ 15V, 27A 208 W Through Hole - Standard 54 A 212 nC - - - TO-247 - - -40°C ~ 150°C (TJ)
NGTB40N120IHRWG

NGTB40N120IHRWG

IGBT 1200V 80A 384W TO247

onsemi

31 -
NGTB40N120IHRWG

数据表

- TO-247-3 Tube Obsolete Trench Field Stop 1200 V 120 A 2.55V @ 15V, 40A 384 W Through Hole 950µJ (off) Standard 80 A 225 nC -/230ns - 600V, 40A, 10Ohm, 15V TO-247 - - -40°C ~ 175°C (TJ)
STGWT80H65FB

STGWT80H65FB

IGBT 650V 120A 469W TO3P-3L

STMicroelectronics

68 -
STGWT80H65FB

数据表

- TO-3P-3, SC-65-3 Tube Obsolete Trench Field Stop 650 V 240 A 2V @ 15V, 80A 469 W Through Hole 2.1mJ (on), 1.5mJ (off) Standard 120 A 414 nC 84ns/280ns - 400V, 80A, 10Ohm, 15V TO-3P - - -55°C ~ 175°C (TJ)
APT40GR120B

APT40GR120B

IGBT NPT 1200V 88A TO247-3

Microchip Technology

37 -
APT40GR120B

数据表

- TO-247-3 Tube Obsolete NPT 1200 V 160 A 3.2V @ 15V, 40A 500 W Through Hole 1.38mJ (on), 906µJ (off) Standard 88 A 210 nC 22ns/163ns - 600V, 40A, 4.3Ohm, 15V TO-247-3 - - -55°C ~ 150°C (TJ)
FGH30S130P

FGH30S130P

IGBT 1300V 60A 500W TO-247AB

onsemi

69 -
FGH30S130P

数据表

- TO-247-3 Tube Obsolete Trench Field Stop 1300 V 90 A 2.3V @ 15V, 30A 500 W Through Hole - Standard 60 A 78 nC - - - TO-247-3 - - -55°C ~ 175°C (TJ)
HGTG40N60C3R

HGTG40N60C3R

75A, 600V N-CHANNEL IGBT

Harris Corporation

45 -
HGTG40N60C3R

数据表

- TO-247-3 Bulk Active - 600 V 200 A 2.2V @ 15V, 40A 291 W Through Hole - Standard 75 A 330 nC - - - TO-247 - - -55°C ~ 150°C (TJ)
STGW40NC60V

STGW40NC60V

IGBT 600V 80A 260W TO247

STMicroelectronics

58 -
STGW40NC60V

数据表

PowerMESH™ TO-247-3 Tube Obsolete - 600 V 200 A 2.5V @ 15V, 40A 260 W Through Hole 330µJ (on), 720µJ (off) Standard 80 A 214 nC 43ns/140ns - 390V, 40A, 3.3Ohm, 15V TO-247-3 - - -55°C ~ 150°C (TJ)
APT40GR120B2D30

APT40GR120B2D30

IGBT NPT 1200V 88A TO247-3

Microchip Technology

60 -
APT40GR120B2D30

数据表

- TO-247-3 Tube Obsolete NPT 1200 V 160 A 3.2V @ 15V, 40A 500 W Through Hole 1.38mJ (on), 906µJ (off) Standard 88 A 210 nC 22ns/163ns - 600V, 40A, 4.3Ohm, 15V TO-247-3 - - -55°C ~ 150°C (TJ)
IRG4PSH71KDPBF

IRG4PSH71KDPBF

IRG4PSH71 - DISCRETE IGBT WITH A

International Rectifier

81 -
IRG4PSH71KDPBF

数据表

- TO-274AA Bulk Obsolete - 1200 V 156 A 3.9V @ 15V, 42A 350 W Through Hole 5.68mJ (on), 3.23mJ (off) Standard 78 A 410 nC 67ns/230ns - 800V, 42A, 5Ohm, 15V SUPER-247™ (TO-274AA) - 107 ns -55°C ~ 150°C (TJ)
SLA5222

SLA5222

IGBT 600V 30A PFC

Sanken Electric USA Inc.

88 -
SLA5222

数据表

- 12-SIP, 7 Leads Tube Active - 600 V - - - Through Hole - Standard 30 A - - - - 7-SIP - - 150°C (TJ)
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