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    首页 > 产品  > 分立半导体产品 > 晶体管 > 绝缘栅双极型晶体管（IGBTs） > 单个 IGBTs

    单个 IGBTs

    制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿（最大值） 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on)）（最大值）@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)（最大值） 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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    图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿（最大值） 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on)）（最大值）@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)（最大值） 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
    APT85GR120B2

    APT85GR120B2

    IGBT NPT 1200V 170A TMAX

    Microchip Technology

    		 28 -
    询价单
    		APT85GR120B2

    数据表

         		- TO-247-3 Tube Active NPT 1200 V 340 A 3.2V @ 15V, 85A 962 W Through Hole 6mJ (on), 3.8mJ (off) Standard 170 A 660 nC 43ns/300ns - 600V, 85A, 4.3Ohm, 15V T-MAX™ - - -55°C ~ 150°C (TJ)
    AFGY160T65SPD-B4

    AFGY160T65SPD-B4

    IGBT TRENCH FS 650V 240A TO247-3

    onsemi

    		 28 -
    询价单
    		AFGY160T65SPD-B4

    数据表

         		- TO-247-3 Tube Active Trench Field Stop 650 V 480 A 2.05V @ 15V, 160A 882 W Through Hole 12.4mJ (on), 5.7mJ (off) Standard 240 A 245 nC 53ns/98ns AEC-Q100 400V, 160A, 5Ohm, 15V TO-247-3 Automotive 132 ns -55°C ~ 175°C (TJ)
    APT50GN120L2DQ2G

    APT50GN120L2DQ2G

    IGBT NPT FIELD STOP 1200V 134A

    Microchip Technology

    		 35 -
    询价单
    		APT50GN120L2DQ2G

    数据表

         		- TO-264-3, TO-264AA Tube Active NPT, Trench Field Stop 1200 V 150 A 2.1V @ 15V, 50A 543 W Through Hole 4495µJ (off) Standard 134 A 315 nC 28ns/320ns - 800V, 50A, 2.2Ohm, 15V - - - -55°C ~ 150°C (TJ)
    IXXR110N65B4H1

    IXXR110N65B4H1

    IGBT 650V 150A 455W ISOPLUS247

    IXYS

    		 28 -
    询价单
    		IXXR110N65B4H1

    数据表

         		GenX4™, XPT™ TO-247-3 Tube Active PT 650 V 460 A 2.2V @ 15V, 110A 455 W Through Hole 2.2mJ (on), 1.05mJ (off) Standard 150 A 183 nC 38ns/156ns - 400V, 55A, 2Ohm, 15V ISOPLUS247™ - 100 ns -55°C ~ 175°C (TJ)
    APT65GP60L2DQ2G

    APT65GP60L2DQ2G

    IGBT PT 600V 198A

    Microchip Technology

    		 13 -
    询价单
    		APT65GP60L2DQ2G

    数据表

         		POWER MOS 7® TO-264-3, TO-264AA Tube Active PT 600 V 250 A 2.7V @ 15V, 65A 833 W Through Hole 605µJ (on), 895µJ (off) Standard 198 A 210 nC 30ns/90ns - 400V, 65A, 5Ohm, 15V - - - -55°C ~ 150°C (TJ)
    IXBA16N170AHV

    IXBA16N170AHV

    REVERSE CONDUCTING IGBT

    IXYS

    		 8 -
    询价单
    		IXBA16N170AHV

    数据表

         		BIMOSFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active - 1700 V 40 A 6V @ 15V, 10A 150 W Surface Mount 2.5mJ (off) Standard 16 A 65 nC 15ns/250ns - 1360V, 10A, 10Ohm, 15V TO-263HV - 25 ns -55°C ~ 150°C (TJ)
    IXXK300N60B3

    IXXK300N60B3

    IGBT 600V 550A 2300W TO264

    IXYS

    		 9 -
    询价单
    		IXXK300N60B3

    数据表

         		GenX3™, XPT™ TO-264-3, TO-264AA Tube Active PT 600 V 1140 A 1.6V @ 15V, 100A 2300 W Through Hole 3.45mJ (on), 2.86mJ (off) Standard 550 A 460 nC 50ns/190ns - 400V, 100A, 1Ohm, 15V TO-264 (IXXK) - - -55°C ~ 175°C (TJ)
    STGD4H60DF

    STGD4H60DF

    IGBT TRENCH FS 600V 8A DPAK

    STMicroelectronics

    		 256 -
    询价单
    		STGD4H60DF

    数据表

         		H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Trench Field Stop 600 V 16 A 1.95V @ 15V, 3A 75 W Surface Mount 68µJ (on), 45µJ (off) Standard 8 A 35 nC 35ns/121ns - 400V, 3A, 47Ohm, 15V DPAK (TO-252) type C2 - 73 ns -55°C ~ 175°C (TJ)
    GT20J341,S4X(S

    GT20J341,S4X(S

    DISCRETE IGBT TRANSISTOR TO-220S

    Toshiba Semiconductor and Storage

    		 75 -
    询价单
    		GT20J341,S4X(S

    数据表

         		- TO-220-3 Full Pack Tube Active - 600 V 80 A 2V @ 15V, 20A 45 W Through Hole 500µJ (on), 400µJ (off) Standard 20 A - 60ns/240ns - 300V, 20A, 33Ohm, 15V TO-220SIS - 90 ns 150°C (TJ)
    STGWA30M65DF2AG

    STGWA30M65DF2AG

    AUTOMOTIVE-GRADE TRENCH GATE FIE

    STMicroelectronics

    		 50 -
    询价单
    		STGWA30M65DF2AG

    数据表

         		M TO-247-3 Tube Active Trench Field Stop 650 V 120 A 2V @ 15V, 30A 441 W Through Hole 756µJ (on), 1.057mJ (off) Standard 87 A 81.6 nC 21.6ns/138ns AEC-Q101 400V, 30A, 10Ohm, 15V TO-247 Long Leads Automotive 151 ns -55°C ~ 175°C (TJ)
    GT30J65MRB,S1E

    GT30J65MRB,S1E

    650V SILICON N-CHANNEL IGBT, TO-

    Toshiba Semiconductor and Storage

    		 64 -
    询价单
    		GT30J65MRB,S1E

    数据表

         		- TO-3P-3, SC-65-3 Tube Active - 650 V - 1.8V @ 15V, 30A 200 W Through Hole 1.4mJ (on), 220µJ (off) Standard 60 A 70 nC 75ns/400ns - 400V, 15A, 56Ohm, 15V TO-3P(N) - 200 ns 175°C (TJ)
    STGWA25IH135DF2

    STGWA25IH135DF2

    IGBT TRENCH FS 1.35KV 50A TO247

    STMicroelectronics

    		 46 -
    询价单
    		STGWA25IH135DF2

    数据表

         		IH2 TO-247-3 Tube Active Trench Field Stop 1350 V 100 A 2.2V @ 15V, 20A 340 W Through Hole 1mJ (off) Standard 50 A 166 nC - - 600V, 20A, 10Ohm, 15V TO-247 Long Leads - - -55°C ~ 175°C (TJ)
    RGW40NL65HRBTL

    RGW40NL65HRBTL

    IGBT TRENCH FS 650V 48A TO263L

    Rohm Semiconductor

    		 1,000 -
    询价单
    		RGW40NL65HRBTL

    数据表

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Trench Field Stop 650 V 80 A 1.9V @ 15V, 20A 144 W Surface Mount 110µJ (on), 160µJ (off) Standard 48 A 59 nC 33ns/129ns AEC-Q101 400V, 10A, 10Ohm, 15V TO-263L Automotive - -40°C ~ 175°C (TJ)
    GT40QR21(STA1,E,D

    GT40QR21(STA1,E,D

    IGBT 1200V 40A TO3P

    Toshiba Semiconductor and Storage

    		 82 -
    询价单
    		GT40QR21(STA1,E,D

    数据表

         		- TO-3P-3, SC-65-3 Tube Active - 1200 V 80 A 2.7V @ 15V, 40A 230 W Through Hole -, 290µJ (off) Standard 40 A - - - 280V, 40A, 10Ohm, 20V TO-3P(N) - 600 ns 175°C (TJ)
    RGW50NL65DHRBTL

    RGW50NL65DHRBTL

    IGBT TRENCH FS 650V 57A TO263L

    Rohm Semiconductor

    		 1,000 -
    询价单
    		RGW50NL65DHRBTL

    数据表

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Trench Field Stop 650 V 100 A 1.9V @ 15V, 25A 165 W Surface Mount 110µJ (on), 230µJ (off) Standard 57 A 73 nC 31ns/119ns AEC-Q101 400V, 12.5A, 10Ohm, 15V TO-263L Automotive 71 ns -40°C ~ 175°C (TJ)
    RGS50NL65HRBTL

    RGS50NL65HRBTL

    IGBT TRENCH FS 650V 50A TO263L

    Rohm Semiconductor

    		 1,000 -
    询价单
    		RGS50NL65HRBTL

    数据表

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Trench Field Stop 650 V 75 A 2.1V @ 15V, 25A 206 W Surface Mount 810µJ (on), 650µJ (off) Standard 50 A 31 nC 28ns/91ns AEC-Q101 400V, 25A, 10Ohm, 15V TO-263L Automotive - -40°C ~ 175°C (TJ)
    RGW60NL65DHRBTL

    RGW60NL65DHRBTL

    IGBT TRENCH FS 650V 67A TO263L

    Rohm Semiconductor

    		 1,000 -
    询价单
    		RGW60NL65DHRBTL

    数据表

         		- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Trench Field Stop 650 V 120 A 1.9V @ 15V, 30A 187 W Surface Mount 180µJ (on), 250µJ (off) Standard 67 A 84 nC 34ns/122ns AEC-Q101 400V, 15A, 10Ohm, 15V TO-263L Automotive 96 ns -40°C ~ 175°C (TJ)
    GT50N322A

    GT50N322A

    IGBT 1000V 50A TO3P

    Toshiba Semiconductor and Storage

    		 52 -
    询价单
    		GT50N322A

    数据表

         		- TO-3P-3, SC-65-3 Tray Active - 1000 V 120 A 2.8V @ 15V, 60A 156 W Through Hole - Standard 50 A - - - - TO-3P(N) - 800 ns 150°C (TJ)
    GT50JR21(STA1,E,S)

    GT50JR21(STA1,E,S)

    PB-F IGBT / TRANSISTOR TO-3PN(OS

    Toshiba Semiconductor and Storage

    		 37 -
    询价单
    		GT50JR21(STA1,E,S)

    数据表

         		- TO-3P-3, SC-65-3 Tube Active - 600 V 100 A 2V @ 15V, 50A 230 W Through Hole - Standard 50 A - - - - TO-3P(N) - - 175°C (TJ)
    APT25GP90BG

    APT25GP90BG

    IGBT PT 900V 72A TO247

    Microchip Technology

    		 51 -
    询价单
    		APT25GP90BG

    数据表

         		POWER MOS 7® TO-247-3 Tube Active PT 900 V 110 A 3.9V @ 15V, 25A 417 W Through Hole 370µJ (off) Standard 72 A 110 nC 13ns/55ns - 600V, 25A, 5Ohm, 15V TO-247 [B] - - -55°C ~ 150°C (TJ)
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