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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
APT75GN60SDQ2G

APT75GN60SDQ2G

IGBT TRENCH FS 600V 155A D3PAK

Microchip Technology

33 -
APT75GN60SDQ2G

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active Trench Field Stop 600 V 225 A 1.85V @ 15V, 75A 536 W Surface Mount 2.5mJ (on), 2.14mJ (off) Standard 155 A 485 nC 47ns/385ns - 400V, 75A, 1Ohm, 15V D3PAK - 25 ns -55°C ~ 175°C (TJ)
AUIRGPS4070D0

AUIRGPS4070D0

AUIRGPS4070D0 - AUTOMOTIVE IGBT

Infineon Technologies

48 -
AUIRGPS4070D0

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
APT50GT120LRG

APT50GT120LRG

IGBT NPT 1200V 50A TO264

Microchip Technology

27 -
APT50GT120LRG

数据表

Thunderbolt IGBT® TO-264-3, TO-264AA Tube Active NPT 1200 V 150 A 3.7V @ 15V, 50A 625 W Through Hole -, 2.33mJ (off) Standard 50 A 340 nC 24ns/230ns - 800V, 50A, 4.7Ohm, 15V TO-264 (L) - - -55°C ~ 150°C (TJ)
APT50GT120B2RDLG

APT50GT120B2RDLG

IGBT NPT 1200V 106A

Microsemi Corporation

8 -
APT50GT120B2RDLG

数据表

Thunderbolt IGBT® TO-247-3 Variant Tube Active NPT 1200 V 150 A 3.7V @ 15V, 50A 694 W Through Hole 3585µJ (on), 1910µJ (off) Standard 106 A 240 nC 23ns/215ns - 800V, 50A, 4.7Ohm, 15V - - - -55°C ~ 150°C (TJ)
IXYF30N450

IXYF30N450

IGBT 4500V 23A ISOPLUSI4

IXYS

17 -
IXYF30N450

数据表

XPT™ ISOPLUSi5-PAK™ Tube Active - 4500 V 190 A 3.9V @ 15V, 30A 230 W Through Hole - Standard 23 A 88 nC 38ns/168ns - 960V, 30A, 15Ohm, 15V ISOPLUS i4-PAC™ - - -55°C ~ 150°C (TJ)
STGB6NC60HT4

STGB6NC60HT4

IGBT 600V 15A 56W D2PAK

STMicroelectronics

174 -
STGB6NC60HT4

数据表

PowerMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete - 600 V 21 A 2.5V @ 15V, 3A 56 W Surface Mount 20µJ (on), 68µJ (off) Standard 15 A 13.6 nC 12ns/76ns - 390V, 3A, 10Ohm, 15V D2PAK - - -55°C ~ 150°C (TJ)
STGP10NC60H

STGP10NC60H

IGBT 600V 20A 60W TO220

STMicroelectronics

59 -
STGP10NC60H

数据表

PowerMESH™ TO-220-3 Tube Obsolete - 600 V - 2.5V @ 15V, 5A 60 W Through Hole 31.8µJ (on), 95µJ (off) Standard 20 A 19.2 nC 14.2ns/72ns - 390V, 5A, 10Ohm, 15V TO-220 - - -55°C ~ 150°C (TJ)
NGB8204ANT4G

NGB8204ANT4G

INSULATED GATE BIPOLAR TRANSISTO

onsemi

795 -
NGB8204ANT4G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete - 430 V 50 A 2.5V @ 4V, 15A 115 W Surface Mount - Logic 18 A - - - - D2PAK - - -55°C ~ 175°C (TJ)
IKD06N60RAATMA2

IKD06N60RAATMA2

IGBT

Infineon Technologies

807 -
IKD06N60RAATMA2

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRGS8B60KPBF

IRGS8B60KPBF

IGBT

Infineon Technologies

550 -
IRGS8B60KPBF

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FGP10N60UNDF

FGP10N60UNDF

FGP10N60UNDF - IGBT, 600V, 10A,

Fairchild Semiconductor

800 -
FGP10N60UNDF

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IGW30N60H3FKSA1

IGW30N60H3FKSA1

IGBT TRENCH FS 600V 60A TO247-3

Infineon Technologies

2,255 -
IGW30N60H3FKSA1

数据表

TrenchStop® TO-247-3 Tube Active Trench Field Stop 600 V 120 A 2.4V @ 15V, 30A 187 W Through Hole 1.38mJ Standard 60 A 165 nC 21ns/207ns - 400V, 30A, 10.5Ohm, 15V PG-TO247-3-1 - - -40°C ~ 175°C (TJ)
STGW75M65DF2

STGW75M65DF2

IGBT TRENCH FS 650V 120A TO247-3

STMicroelectronics

8,112 -
STGW75M65DF2

数据表

M TO-247-3 Tube Active Trench Field Stop 650 V 225 A 2.1V @ 15V, 75A 468 W Through Hole 690µJ (on), 2.54mJ (off) Standard 120 A 225 nC 47ns/125ns - 400V, 75A, 3.3Ohm, 15V TO-247-3 - 165 ns -55°C ~ 175°C (TJ)
IXYP50N65C3

IXYP50N65C3

IGBT 650V 130A 600W TO220

IXYS

7,799 -
IXYP50N65C3

数据表

GenX3™, XPT™ TO-220-3 Tube Active PT 650 V 250 A 2.1V @ 15V, 36A 600 W Through Hole 1.3mJ (on), 370µJ (off) Standard 130 A 80 nC 22ns/80ns - 400V, 36A, 5Ohm, 15V TO-220-3 - - -55°C ~ 175°C (TJ)
IXGA20N120A3

IXGA20N120A3

IGBT PT 1200V 40A TO263AA

IXYS

4,657 -
IXGA20N120A3

数据表

GenX3™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active PT 1200 V 120 A 2.5V @ 15V, 20A 180 W Surface Mount 2.85mJ (on), 6.47mJ (off) Standard 40 A 50 nC 16ns/290ns - 960V, 20A, 10Ohm, 15V TO-263AA - - -55°C ~ 150°C (TJ)
IXBT42N170

IXBT42N170

IGBT 1700V 80A TO268AA

IXYS

5,888 -
IXBT42N170

数据表

BIMOSFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active - 1700 V 300 A 2.8V @ 15V, 42A 360 W Surface Mount - Standard 80 A 188 nC - - - TO-268AA - 1.32 µs -55°C ~ 150°C (TJ)
IXYT30N450HV

IXYT30N450HV

IGBT 4500V 60A TO268HV

IXYS

5,472 -
IXYT30N450HV

数据表

XPT™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Active - 4500 V 200 A 3.9V @ 15V, 30A 430 W Surface Mount - Standard 60 A 88 nC 38ns/168ns - 960V, 30A, 10Ohm, 15V TO-268HV (IXYT) - - -55°C ~ 150°C (TJ)
IXBK75N170

IXBK75N170

IGBT 1700V 200A TO264AA

IXYS

7,696 -
IXBK75N170

数据表

BIMOSFET™ TO-264-3, TO-264AA Tube Active - 1700 V 580 A 3.1V @ 15V, 75A 1040 W Through Hole - Standard 200 A 350 nC - - - TO-264AA - 1.5 µs -55°C ~ 150°C (TJ)
IXYX140N120A4

IXYX140N120A4

IGBT PT 1200V 480A PLUS247-3

IXYS

4,063 -
IXYX140N120A4

数据表

XPT™, GenX4™ TO-247-3 Variant Tube Active PT 1200 V 1200 A 1.7V @ 15V, 140A 1500 W Through Hole 4.9mJ (on), 12mJ (off) Standard 480 A 420 nC 52ns/590ns - 600V, 70A, 1.5Ohm, 15V PLUS247™-3 - 47 ns -55°C ~ 175°C (TJ)
IXBX50N360HV

IXBX50N360HV

IGBT 3600V 125A TO247PLUS-HV

IXYS

1 -
IXBX50N360HV

数据表

BIMOSFET™ TO-247-3 Variant Tube Active - 3600 V 420 A 2.9V @ 15V, 50A 660 W Through Hole - Standard 125 A 210 nC 46ns/205ns - 960V, 50A, 5Ohm, 15V TO-247PLUS-HV - 1.7 µs -55°C ~ 150°C (TJ)
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