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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
RGTV00TS65DGC11

RGTV00TS65DGC11

IGBT TRNCH FIELD 650V 95A TO247N

Rohm Semiconductor

6,320 -
RGTV00TS65DGC11

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 200 A 1.9V @ 15V, 50A 276 W Through Hole 1.17mJ (on), 940µJ (off) Standard 95 A 104 nC 41ns/142ns - 400V, 50A, 10Ohm, 15V TO-247N - 102 ns -40°C ~ 175°C (TJ)
RGS00TS65HRC11

RGS00TS65HRC11

IGBT TRNCH FIELD 650V 88A TO247N

Rohm Semiconductor

6,074 -
RGS00TS65HRC11

数据表

- TO-247-3 Tube Active Trench Field Stop 650 V 150 A 2.1V @ 15V, 50A 326 W Through Hole 1.46mJ (on), 1.29mJ (off) Standard 88 A 58 nC 36ns/115ns - 400V, 50A, 10Ohm, 15V TO-247N - - -40°C ~ 175°C (TJ)
RGTH60TS65GC11

RGTH60TS65GC11

IGBT TRNCH FIELD 650V 58A TO247N

Rohm Semiconductor

6,897 -
RGTH60TS65GC11

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 120 A 2.1V @ 15V, 30A 197 W Through Hole - Standard 58 A 58 nC 27ns/105ns - 400V, 30A, 10Ohm, 15V TO-247N - - -40°C ~ 175°C (TJ)
RGTVX2TS65DGC13

RGTVX2TS65DGC13

2S SHORT-CIRCUIT TOLERANCE, 650V

Rohm Semiconductor

5,776 -
RGTVX2TS65DGC13

数据表

- TO-247-3 Tube Active Trench Field Stop 650 V 240 A 1.9V @ 15V, 60A 319 W Through Hole 2.08mJ (on), 1.15mJ (off) Standard 111 A 123 nC 49ns/150ns - 400V, 60A, 10Ohm, 15V TO-247GE - 111 ns -40°C ~ 175°C (TJ)
RGTH40TS65DGC11

RGTH40TS65DGC11

IGBT TRNCH FIELD 650V 40A TO247N

Rohm Semiconductor

9,643 -
RGTH40TS65DGC11

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 80 A 2.1V @ 15V, 20A 144 W Through Hole - Standard 40 A 40 nC 22ns/73ns - 400V, 20A, 10Ohm, 15V TO-247N - 58 ns -40°C ~ 175°C (TJ)
RGTH50TS65GC11

RGTH50TS65GC11

IGBT TRNCH FIELD 650V 50A TO247N

Rohm Semiconductor

9,931 -
RGTH50TS65GC11

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 100 A 2.1V @ 15V, 25A 174 W Through Hole - Standard 50 A 49 nC 27ns/94ns - 400V, 25A, 10Ohm, 15V TO-247N - - -40°C ~ 175°C (TJ)
RGTH80TS65DGC11

RGTH80TS65DGC11

IGBT TRNCH FIELD 650V 70A TO247N

Rohm Semiconductor

9,150 -
RGTH80TS65DGC11

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 160 A 2.1V @ 15V, 40A 234 W Through Hole - Standard 70 A 79 nC 34ns/120ns - 400V, 40A, 10Ohm, 15V TO-247N - 58 ns -40°C ~ 175°C (TJ)
RGTH00TS65DGC11

RGTH00TS65DGC11

IGBT TRNCH FIELD 650V 85A TO247N

Rohm Semiconductor

3,551 -
RGTH00TS65DGC11

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 200 A 2.1V @ 15V, 50A 277 W Through Hole - Standard 85 A 94 nC 39ns/143ns - 400V, 50A, 10Ohm, 15V TO-247N - 54 ns -40°C ~ 175°C (TJ)
RGTV00TS65GC11

RGTV00TS65GC11

IGBT TRNCH FIELD 650V 95A TO247N

Rohm Semiconductor

9,465 -
RGTV00TS65GC11

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 200 A 1.9V @ 15V, 50A 276 W Through Hole 1.17mJ (on), 940µJ (off) Standard 95 A 104 nC 41ns/142ns - 400V, 50A, 10Ohm, 15V TO-247N - - -40°C ~ 175°C (TJ)
RGW00TK65GVC11

RGW00TK65GVC11

IGBT TRNCH FIELD 650V 45A TO3PFM

Rohm Semiconductor

5,177 -
RGW00TK65GVC11

数据表

- TO-3PFM, SC-93-3 Tube Active Trench Field Stop 650 V 200 A 1.9V @ 15V, 50A 89 W Through Hole 1.18mJ (on), 960µJ (off) Standard 45 A 141 nC 52ns/180ns - 400V, 50A, 10Ohm, 15V TO-3PFM - - -40°C ~ 175°C (TJ)
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