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单个 IGBTs

制造商 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 IGBT 类型 电压 - 集电极发射极击穿(最大值) 电流 - 集电极脉冲 (Icm) 导通电压 (Vce(on))(最大值)@ Vge, Ic 功率 - 最大值 安装类型 开关能量 输入类型 电流 - 集电极 (Ic)(最大值) 栅极电荷 导通/关断时间 (Td) @ 25°C 认证 测试条件 供应商设备封装 等级 反向恢复时间 (trr) 工作温度
RGT8NS65DGTL

RGT8NS65DGTL

IGBT TRENCH FIELD 650V 8A LPDS

Rohm Semiconductor

7,228 -
RGT8NS65DGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Trench Field Stop 650 V 12 A 2.1V @ 15V, 4A 65 W Surface Mount - Standard 8 A 13.5 nC 17ns/69ns - 400V, 4A, 50Ohm, 15V LPDS - 40 ns -40°C ~ 175°C (TJ)
RGT30NL65DGTL

RGT30NL65DGTL

IGBT TRENCH FIELD 650V 30A LPDS

Rohm Semiconductor

8,964 -
RGT30NL65DGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Trench Field Stop 650 V 45 A 2.1V @ 15V, 15A 133 W Surface Mount - Standard 30 A 32 nC 18ns/64ns - 400V, 15A, 10Ohm, 15V LPDS - 55 ns -40°C ~ 175°C (TJ)
RGT80TS65DGC11

RGT80TS65DGC11

IGBT 650V 70A 234W TO-247N

Rohm Semiconductor

5 -
RGT80TS65DGC11

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 120 A 2.1V @ 15V, 40A 234 W Through Hole - Standard 70 A 79 nC 34ns/119ns - 400V, 40A, 10Ohm, 15V TO-247N - 58 ns -40°C ~ 175°C (TJ)
RGCL80TS60DGC11

RGCL80TS60DGC11

IGBT TRNCH FIELD 600V 65A TO247N

Rohm Semiconductor

5,704 -
RGCL80TS60DGC11

数据表

- TO-247-3 Bulk Not For New Designs Trench Field Stop 600 V 160 A 1.8V @ 15V, 40A 148 W Through Hole 1.11mJ (on), 1.68mJ (off) Standard 65 A 98 nC 53ns/227ns - 400V, 40A, 10Ohm, 15V TO-247N - 58 ns -40°C ~ 175°C (TJ)
RGW00TS65GC11

RGW00TS65GC11

IGBT TRNCH FIELD 650V 96A TO247N

Rohm Semiconductor

9,955 -
RGW00TS65GC11

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 200 A 1.9V @ 15V, 50A 254 W Through Hole 1.18mJ (on), 960µJ (off) Standard 96 A 141 nC 52ns/180ns - 400V, 50A, 10Ohm, 15V TO-247N - - -40°C ~ 175°C (TJ)
RGTV60TS65DGC11

RGTV60TS65DGC11

IGBT TRNCH FIELD 650V 60A TO247N

Rohm Semiconductor

3,805 -
RGTV60TS65DGC11

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 120 A 1.9V @ 15V, 30A 194 W Through Hole 570µJ (on), 500µJ (off) Standard 60 A 64 nC 33ns/105ns - 400V, 30A, 10Ohm, 15V TO-247N - 95 ns -40°C ~ 175°C (TJ)
RGS60TS65HRC11

RGS60TS65HRC11

IGBT TRNCH FIELD 650V 56A TO247N

Rohm Semiconductor

3,162 -
RGS60TS65HRC11

数据表

- TO-247-3 Tube Active Trench Field Stop 650 V 90 A 2.1V @ 15V, 30A 223 W Through Hole 660µJ (on), 810µJ (off) Standard 56 A 36 nC 28ns/104ns - 400V, 30A, 10Ohm, 15V TO-247N - - -40°C ~ 175°C (TJ)
RGTV60TK65DGVC11

RGTV60TK65DGVC11

IGBT TRNCH FIELD 650V 33A TO3PFM

Rohm Semiconductor

9,285 -
RGTV60TK65DGVC11

数据表

- TO-3PFM, SC-93-3 Tube Active Trench Field Stop 650 V 120 A 1.9V @ 15V, 30A 76 W Through Hole 570µJ (on), 500µJ (off) Standard 33 A 64 nC 33ns/105ns - 400V, 30A, 10Ohm, 15V TO-3PFM - 95 ns -40°C ~ 175°C (TJ)
RGW00TS65DGC11

RGW00TS65DGC11

IGBT TRNCH FIELD 650V 96A TO247N

Rohm Semiconductor

2,940 -
RGW00TS65DGC11

数据表

- TO-247-3 Tube Not For New Designs Trench Field Stop 650 V 200 A 1.9V @ 15V, 50A 254 W Through Hole 1.18mJ (on), 960µJ (off) Standard 96 A 141 nC 52ns/180ns - 400V, 50A, 10Ohm, 15V TO-247N - 95 ns -40°C ~ 175°C (TJ)
RGS80TS65HRC11

RGS80TS65HRC11

IGBT TRNCH FIELD 650V 73A TO247N

Rohm Semiconductor

8,846 -
RGS80TS65HRC11

数据表

- TO-247-3 Tube Active Trench Field Stop 650 V 120 A 2.1V @ 15V, 40A 272 W Through Hole 1.05mJ (on), 1.03mJ (off) Standard 73 A 48 nC 37ns/112ns - 400V, 40A, 10Ohm, 15V TO-247N - - -40°C ~ 175°C (TJ)
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