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单个场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型
PTVA042502EC-V1-R2

PTVA042502EC-V1-R2

RF MOSFET

MACOM Technology Solutions

5,541 -
PTVA042502EC-V1-R2

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - -
PTVA043502EC-V1-R2

PTVA043502EC-V1-R2

RF MOSFET

MACOM Technology Solutions

8,540 -
PTVA043502EC-V1-R2

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - -
PTVA043502FC-V1-R2

PTVA043502FC-V1-R2

RF MOSFET

MACOM Technology Solutions

8,080 -
PTVA043502FC-V1-R2

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - -
MRF5P21180HR5

MRF5P21180HR5

RF MOSFET LDMOS 28V NI1230

NXP USA Inc.

4,779 -
MRF5P21180HR5

数据表

- NI-1230 Tape & Reel (TR) Obsolete LDMOS - 14dB 28 V - - 1.6 A 2.16GHz 38W 65 V - NI-1230 - Chassis Mount
C4H18W500AZ

C4H18W500AZ

RF MOSFET 48V SOT1273-1

Ampleon USA Inc.

5,654 -
C4H18W500AZ

数据表

- SOT-1273-1 Tray Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Source 14.6dB 48 V - - 350 mA 1.8GHz ~ 2GHz 500W 150 V - SOT1273-1 - Surface Mount
C4H24F550AVZ

C4H24F550AVZ

RF MOSFET SOT1249B3

Ampleon USA Inc.

3,936 -
C4H24F550AVZ

数据表

- - Tray Active - - - - - - - - - - - - - -
PTFC262157FH-V1-R0

PTFC262157FH-V1-R0

RF MOSFET

MACOM Technology Solutions

8,719 -
PTFC262157FH-V1-R0

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - -
PXAC182908FV-V1-R250

PXAC182908FV-V1-R250

RF MOSFET

MACOM Technology Solutions

5,785 -
PXAC182908FV-V1-R250

数据表

* - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - -
PXAC192908FV-V1-R250

PXAC192908FV-V1-R250

RF MOSFET LDMOS

MACOM Technology Solutions

8,769 -
PXAC192908FV-V1-R250

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - -
ST50V10200

ST50V10200

RF MOSFET LDMOS M246

STMicroelectronics

8,492 -
ST50V10200

数据表

- M246 Bulk Obsolete LDMOS N-Channel 17.5dB - 1µA - - - 225W 110 V - M246 - Chassis Mount
QPD1013SR

QPD1013SR

DC-2.7 GHZ, 150W, 65V GAN RF TR

Qorvo

6,152 -
QPD1013SR

数据表

- 6-VDFN Exposed Pad Tape & Reel (TR) Active HEMT N-Channel 21.8dB 65 V - - 240 mA 2.7GHz 150W 225 V - 6-DFN (7.2x6.6) - Surface Mount
SD2932

SD2932

RF MOSFET 50V M244

STMicroelectronics

3,286 -
SD2932

数据表

- M244 Box Obsolete MOSFET (Metal Oxide) N-Channel 16dB 50 V 40A - 500 mA 175MHz 300W 125 V - M244 - -
SD2932B

SD2932B

RF MOSFET 50V M244

STMicroelectronics

3,973 -
SD2932B

数据表

- M244 Tube Obsolete MOSFET (Metal Oxide) N-Channel 16dB 50 V 40A - 500 mA 175MHz 300W 125 V - M244 - -
GTRB097152FC-V1-R2

GTRB097152FC-V1-R2

RF MOSFET HEMT H-37248C-4 250PCS

MACOM Technology Solutions

8,010 -
GTRB097152FC-V1-R2

数据表

- H-37248C-4 Tape & Reel (TR) Active HEMT - 18dB - - - - 758MHz ~ 960MHz 900W 48 V - H-37248C-4 - Surface Mount
GTRB097152FC-V1-R0

GTRB097152FC-V1-R0

RF MOSFET HEMT H-37248C-4 50PCS

MACOM Technology Solutions

2,129 -
GTRB097152FC-V1-R0

数据表

- H-37248C-4 Tape & Reel (TR) Active HEMT - 18dB - - - - 758MHz ~ 960MHz 900W 48 V - H-37248C-4 - Surface Mount
BLC10G19XS-601AVTZ

BLC10G19XS-601AVTZ

RF MOSFET LDMOS 30V SOT1258-4

Ampleon USA Inc.

8,615 -
BLC10G19XS-601AVTZ

数据表

- SOT-1258-4 Tray Active LDMOS (Dual), Common Source 2 N-Channel (Dual) Common Source 15dB 30 V 2.8µA - 1.06 A 1.93GHz ~ 1.995GHz 600W 65 V - SOT1258-4 - Surface Mount
PTFA192401EV4R250FTMA1

PTFA192401EV4R250FTMA1

RF MOSFET LDMOS 30V H-36260-2

Infineon Technologies

2,689 -
PTFA192401EV4R250FTMA1

数据表

- H-36260-2 Tape & Reel (TR) Obsolete LDMOS - 16dB 30 V 10µA - 1.6 A 1.96GHz 50W 65 V - H-36260-2 - Chassis Mount
PTFB213208FV-V1-R250

PTFB213208FV-V1-R250

RF MOSFET LDMOS 28V H-37275G-6

MACOM Technology Solutions

9,602 -
PTFB213208FV-V1-R250

数据表

- H-37275G-6/2 Tape & Reel (TR) Active LDMOS - 17dB 28 V 10µA - 2.6 A 2.11GHz ~ 2.17GHz 320W 65 V - H-37275G-6/2 - -
A5G07H800W19NR3

A5G07H800W19NR3

A5G07H800W19NR3

NXP USA Inc.

5,944 -
A5G07H800W19NR3

数据表

- OM-780-4S4S Bulk Active GaN - 18.3dB 50 V - - 350 mA 717MHz ~ 850MHz 112W 125 V - OM-780-4S4S - Surface Mount
A5G08H800W19NR3

A5G08H800W19NR3

A5G08H800W19NR3

NXP USA Inc.

6,914 -
A5G08H800W19NR3

数据表

- OM-780-4S4S Bulk Active GaN - 18.2dB 50 V - - 350 mA 865MHz ~ 960MHz 112W 125 V - OM-780-4S4S - Surface Mount
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