富聪科技订单满¥1000免运费
关注我们:

单个场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 增益 电压 - 测试 电流额定值(安培) 噪声系数 电流 - 测试 频率 功率 - 输出 额定电压 等级 供应商设备封装 认证 安装类型
PXAC192908FV-V1

PXAC192908FV-V1

RF MOSFET

MACOM Technology Solutions

8,603 -
PXAC192908FV-V1

数据表

* - Tray Obsolete - - - - - - - - - - - - - -
PTFA082201F V1

PTFA082201F V1

RF MOSFET LDMOS 30V H-37260-2

Infineon Technologies

2,139 -
PTFA082201F V1

数据表

- 2-Flatpack, Fin Leads, Flanged Tray Discontinued at Digi-Key LDMOS - 18dB 30 V 10µA - 1.95 A 894MHz 220W 65 V - H-37260-2 - Surface Mount
PTFA082201E V1

PTFA082201E V1

RF MOSFET LDMOS 30V H-36260-2

Infineon Technologies

6,889 -
PTFA082201E V1

数据表

- H-36260-2 Tray Discontinued at Digi-Key LDMOS - 18dB 30 V 10µA - 1.95 A 894MHz 220W 65 V - H-36260-2 - Chassis Mount
PTFA092201E V1

PTFA092201E V1

RF MOSFET LDMOS 30V H-36260-2

Infineon Technologies

2,027 -
PTFA092201E V1

数据表

- H-36260-2 Tray Discontinued at Digi-Key LDMOS - 18.5dB 30 V 10µA - 1.85 A 960MHz 220W 65 V - H-36260-2 - Chassis Mount
BLF2425M8LS140J

BLF2425M8LS140J

RF MOSFET LDMOS 28V SOT502B

Ampleon USA Inc.

3,468 -
BLF2425M8LS140J

数据表

- SOT-502B Tape & Reel (TR) Obsolete LDMOS - 19dB 28 V - - 1.3 A 2.45GHz 140W 65 V - SOT502B - Chassis Mount
SD3933

SD3933

RF MOSFET 100V M177

STMicroelectronics

9,258 -
SD3933

数据表

- M177 Tray Active MOSFET (Metal Oxide) N-Channel 29dB 100 V 20A - 250 mA 30MHz 350W 250 V - M177 - -
BLF2425M9L30J

BLF2425M9L30J

RF MOSFET LDMOS 32V CDFM2

Ampleon USA Inc.

9,890 -
BLF2425M9L30J

数据表

- SOT-1135A Tape & Reel (TR) Active LDMOS - 18.5dB 32 V - - 20 mA 2.45GHz 30W 65 V - CDFM2 - Chassis Mount
QPD1013TR7

QPD1013TR7

DC-2.7 GHZ, 150W, 65V GAN RF TR

Qorvo

3,673 -
QPD1013TR7

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - -
MRFE6VP6300HSR5

MRFE6VP6300HSR5

RF MOSFET LDMOS 50V NI780

NXP USA Inc.

2,698 -
MRFE6VP6300HSR5

数据表

- NI-780S-4L Tape & Reel (TR) Active LDMOS Dual 26.5dB 50 V - - 100 mA 230MHz 300W 130 V - NI-780S-4L - Surface Mount
MRFE6VP6300GSR5

MRFE6VP6300GSR5

RF MOSFET LDMOS 50V NI780

NXP USA Inc.

8,470 -
MRFE6VP6300GSR5

数据表

- NI-780GS-4L Tape & Reel (TR) Active LDMOS - 25dB - - - - 600MHz 300W 50 V - NI-780GS-4L - Chassis Mount
MRF275L

MRF275L

RF MOSFET 28V 333-04

MACOM Technology Solutions

8,259 -
MRF275L

数据表

- 333-04 Tray Active MOSFET (Metal Oxide) N-Channel 8.8dB 28 V 13A - 100 mA 500MHz 100W 65 V - 333-04, Style 2 - -
A5G26H605W19NR3

A5G26H605W19NR3

A5G26H605W19NR3

NXP USA Inc.

5,885 -
A5G26H605W19NR3

数据表

- OM-780-4S4S Bulk Active GaN - 14.2dB 48 V - - 300 mA 2.496GHz ~ 2.69GHz 85W 125 V - OM-780-4S4S - Surface Mount
MMRF5016HSR5

MMRF5016HSR5

RF MOSFET HEMT NI400

NXP USA Inc.

2,646 -
MMRF5016HSR5

数据表

- NI-400S-2S Tape & Reel (TR) Obsolete HEMT - - - - - - 1.8GHz ~ 2.2GHz 32W 48 V - NI-400S-2S - Surface Mount
PTF141501E V1

PTF141501E V1

RF MOSFET LDMOS 28V H-30260-2

Infineon Technologies

9,578 -
PTF141501E V1

数据表

GOLDMOS® 2-Flatpack, Fin Leads Tray Obsolete LDMOS - 16.5dB 28 V 1µA - 1.5 A 1.5GHz 150W 65 V - H-30260-2 - Surface Mount
MRF6V2300NBR1

MRF6V2300NBR1

RF MOSFET LDMOS 50V TO272-4

NXP USA Inc.

5,952 -
MRF6V2300NBR1

数据表

- TO-272BB Tape & Reel (TR) Obsolete LDMOS - 25.5dB 50 V - - 900 mA 220MHz 300W 110 V - TO-272 WB-4 - Chassis Mount
MRF6V2300NBR5

MRF6V2300NBR5

RF MOSFET LDMOS 50V TO272-4

NXP USA Inc.

7,025 -
MRF6V2300NBR5

数据表

- TO-272BB Tape & Reel (TR) Obsolete LDMOS - 25.5dB 50 V - - 900 mA 220MHz 300W 110 V - TO-272 WB-4 - Chassis Mount
GTVA212701FA-V2-R0

GTVA212701FA-V2-R0

RF MOSFET HEMT 48V H-87265J-2

MACOM Technology Solutions

7,270 -
GTVA212701FA-V2-R0

数据表

GaN H-87265J-2 Tape & Reel (TR) Active HEMT - 19dB 48 V - - 320 mA 2.11GHz ~ 2.2GHz 270W 125 V - H-87265J-2 - Surface Mount
GTVA212701FA-V2-R2

GTVA212701FA-V2-R2

RF MOSFET HEMT 48V H-87265J-2

MACOM Technology Solutions

5,278 -
GTVA212701FA-V2-R2

数据表

GaN H-87265J-2 Tape & Reel (TR) Active HEMT - 19dB 48 V - - 320 mA 2.11GHz ~ 2.2GHz 270W 125 V - H-87265J-2 - Surface Mount
A3G26H350W17SR3

A3G26H350W17SR3

RF MOSFET GAN 48V NI780

NXP USA Inc.

2,577 -
A3G26H350W17SR3

数据表

- NI-780S-4S2S Tape & Reel (TR) Obsolete GaN - 13.3dB 48 V - - 250 mA 2.496GHz ~ 2.69GHz 59W 125 V - NI-780S-4S2S - -
PTVA042502FC-V1-R250

PTVA042502FC-V1-R250

RF MOSFET LDMOS

MACOM Technology Solutions

3,054 -
PTVA042502FC-V1-R250

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - -
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户