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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRLR8103VTRRPBF

IRLR8103VTRRPBF

MOSFET N-CH 30V 91A DPAK

Infineon Technologies

3,437 -
IRLR8103VTRRPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 91A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V Surface Mount 3V @ 250µA 27 nC @ 5 V 30 V ±20V 2672 pF @ 16 V - - TO-252AA (DPAK) - 115W (Tc) -55°C ~ 150°C (TJ)
MCU09N20-TP

MCU09N20-TP

Interface

Micro Commercial Co

3,755 -
MCU09N20-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 250mOhm @ 4.5A, 10V Surface Mount 3V @ 250µA 11.8 nC @ 10 V 200 V ±30V 509 pF @ 25 V - - DPAK - 83W (Tc) -55°C ~ 150°C (TJ)
DMTH3002LPSQ-13

DMTH3002LPSQ-13

MOSFET BVDSS: 25V~30V POWERDI506

Diodes Incorporated

6,466 -
DMTH3002LPSQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 240A (Tc) 4.5V, 10V 1.6mOhm @ 25A, 10V Surface Mount 2V @ 1mA 77 nC @ 10 V 30 V ±16V 5000 pF @ 15 V AEC-Q101 - PowerDI5060-8 (Type K) Automotive 1.2W (Ta), 136W (Tc) -55°C ~ 175°C (TJ)
IRFBC40ASTRLPBF

IRFBC40ASTRLPBF

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix

550 -
IRFBC40ASTRLPBF

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V Surface Mount 4V @ 250µA 42 nC @ 10 V 600 V ±30V 1036 pF @ 25 V - - TO-263 (D2PAK) - 125W (Tc) -55°C ~ 150°C (TJ)
BUZ73A

BUZ73A

MOSFET N-CH 200V 5.5A TO220-3

Infineon Technologies

3,062 -
BUZ73A

数据表

SIPMOS® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 600mOhm @ 4.5A, 10V Through Hole 4V @ 1mA - 200 V ±20V 530 pF @ 25 V - - PG-TO220-3 - 40W (Tc) -55°C ~ 150°C (TJ)
FQU2N90TU-AM002

FQU2N90TU-AM002

MOSFET N-CH 900V 1.7A IPAK

onsemi

9,915 -
FQU2N90TU-AM002

数据表

QFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.7A (Tc) 10V 7.2Ohm @ 850mA, 10V Through Hole 5V @ 250µA 15 nC @ 10 V 900 V ±30V 500 pF @ 25 V - - IPAK - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
NP160N055TUK-E1-AY

NP160N055TUK-E1-AY

MOSFET N-CH 55V 160A TO263-7

Renesas Electronics Corporation

1,540 -
NP160N055TUK-E1-AY

数据表

- TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 2.1mOhm @ 80A, 10V Surface Mount 4V @ 250µA 189 nC @ 10 V 55 V ±20V 11250 pF @ 25 V - - TO-263-7 - 1.8W (Ta), 250W (Tc) 175°C (TJ)
DMPH4013SPS-13

DMPH4013SPS-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

6,389 -
DMPH4013SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 69A (Tc) 4.5V, 10V 13mOhm @ 10A, 10V Surface Mount 3V @ 250µA 87 nC @ 10 V 40 V ±20V 4763 pF @ 20 V - - PowerDI5060-8 - 1.5W (Ta) -55°C ~ 175°C (TJ)
IPT60R090CFD7XTMA1

IPT60R090CFD7XTMA1

MOSFET N-CH 600V 28A 8HSOF

Infineon Technologies

1,960 -
IPT60R090CFD7XTMA1

数据表

CoolMOS™ CFD7 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 90mOhm @ 9.3A, 10V Surface Mount 4.5V @ 470µA 42 nC @ 10 V 600 V ±20V 1752 pF @ 400 V - - PG-HSOF-8-2 - 160W (Tc) -55°C ~ 150°C (TJ)
SPU18P06P

SPU18P06P

MOSFET P-CH 60V 18.6A TO251-3

Infineon Technologies

8,200 -
SPU18P06P

数据表

SIPMOS® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 18.6A (Tc) 10V 130mOhm @ 13.2A, 10V Through Hole 4V @ 1mA 33 nC @ 10 V 60 V ±20V 860 pF @ 25 V - - PG-TO251-3 - - -
SIHG21N60EF-GE3

SIHG21N60EF-GE3

MOSFET N-CH 600V 21A TO247AC

Vishay Siliconix

397 -
SIHG21N60EF-GE3

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 176mOhm @ 11A, 10V Through Hole 4V @ 250µA 84 nC @ 10 V 600 V ±30V 2030 pF @ 100 V - - TO-247AC - 227W (Tc) -55°C ~ 150°C (TJ)
SQJ858EP-T1_GE3

SQJ858EP-T1_GE3

MOSFET N-CH 40V 75A PPAK SO-8

Vishay Siliconix

3,834 -
SQJ858EP-T1_GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 6mOhm @ 11A, 10V Surface Mount 2.5V @ 250µA 60 nC @ 10 V 40 V ±20V 2500 pF @ 20 V AEC-Q101 - PowerPAK® SO-8 Automotive 68W (Tc) -55°C ~ 175°C (TJ)
IXTQ42N25P

IXTQ42N25P

MOSFET N-CH 250V 42A TO3P

Littelfuse Inc.

280 -
IXTQ42N25P

数据表

Polar TO-3P-3, SC-65-3 Tube Active N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V 84mOhm @ 500mA, 10V Through Hole 5.5V @ 250µA 70 nC @ 10 V 250 V ±20V 2300 pF @ 25 V - - TO-3P - 300W (Tc) -55°C ~ 150°C (TJ)
STB6NK60Z-1

STB6NK60Z-1

MOSFET N-CH 600V 6A I2PAK

STMicroelectronics

8,572 -
STB6NK60Z-1

数据表

SuperMESH™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 1.2Ohm @ 3A, 10V Through Hole 4.5V @ 100µA 46 nC @ 10 V 600 V ±30V 905 pF @ 25 V - - I2PAK - 110W (Tc) -55°C ~ 150°C (TJ)
RBA160N04AHPF-4UA01#GB0

RBA160N04AHPF-4UA01#GB0

POWER TRS2 AUTOMOTIVE MOS MP-25L

Renesas Electronics Corporation

3,180 -
RBA160N04AHPF-4UA01#GB0

数据表

- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 1.25mOhm @ 80A, 10V Surface Mount 4V @ 250µA 236 nC @ 10 V 40 V ±20V 13200 pF @ 25 V AEC-Q101 - TO-263-7 Automotive 1.8W (Ta), 250W (Tc) 175°C
FQD4P40TM

FQD4P40TM

MOSFET P-CH 400V 2.7A DPAK

onsemi

5,355 -
FQD4P40TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.7A (Tc) 10V 3.1Ohm @ 1.35A, 10V Surface Mount 5V @ 250µA 23 nC @ 10 V 400 V ±30V 680 pF @ 25 V - - TO-252AA - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
FDMS8050

FDMS8050

MOSFET N-CHANNEL 30V 55A 8PQFN

onsemi

2,999 -
FDMS8050

数据表

- 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 55A (Tc) 4.5V, 10V 0.65mOhm @ 55A, 10V Surface Mount 3V @ 750µA 285 nC @ 10 V 30 V ±20V 22610 pF @ 15 V - - 8-PQFN (5x6) - 156W (Tc) -55°C ~ 150°C (TJ)
DMTH10H2M5STLWQ-13

DMTH10H2M5STLWQ-13

MOSFET BVDSS: 61V~100V,POWERDI10

Diodes Incorporated

1,122 -
DMTH10H2M5STLWQ-13

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 215A (Tc) 10V 2.5mOhm @ 30A, 10V Surface Mount 4V @ 250µA 124.4 nC @ 10 V 100 V ±20V 8450 pF @ 50 V AEC-Q101 - POWERDI1012-8 Automotive 5.8W (Ta), 230.8W (Tc) -55°C ~ 175°C (TJ)
FQB3N80TM

FQB3N80TM

MOSFET N-CH 800V 3A D2PAK

onsemi

7,063 -
FQB3N80TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 5Ohm @ 1.5A, 10V Surface Mount 5V @ 250µA 19 nC @ 10 V 800 V ±30V 690 pF @ 25 V - - TO-263 (D2PAK) - - -55°C ~ 150°C (TJ)
IPDQ60R065S7XTMA1

IPDQ60R065S7XTMA1

HIGH POWER_NEW PG-HDSOP-22

Infineon Technologies

645 -
IPDQ60R065S7XTMA1

数据表

CoolMOS™ 22-PowerBSOP Module Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 12V 65mOhm @ 8A, 12V Surface Mount 4.5V @ 490µA 51 nC @ 12 V 600 V ±20V 1932 pF @ 300 V - - PG-HDSOP-22-1 - 195W (Tc) -55°C ~ 150°C (TJ)
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