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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
NVH4L050N170M1

NVH4L050N170M1

SILICON CARBIDE (SIC) MOSFET ELI

onsemi

7,804 -
NVH4L050N170M1

数据表

- TO-247-4 Bulk Discontinued at Digi-Key N-Channel SiC (Silicon Carbide Junction Transistor) 45A (Tc) 20V 76mOhm @ 35A, 20V Through Hole 4.3V @ 10mA 105 nC @ 20 V 1700 V +25V, -15V 2063 pF @ 1000 V AEC-Q101 - TO-247-4L Automotive 333W (Tc) -55°C ~ 175°C (TJ)
FDMA8878-F130

FDMA8878-F130

SINGLE N-CHANNEL POWER TRENC MOS

onsemi

2,995 -
FDMA8878-F130

数据表

PowerTrench® 6-VDFN Exposed Pad Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 9A (Ta), 10A (Tc) 4.5V, 10V 16mOhm @ 9A, 10V Surface Mount 3V @ 250µA 12 nC @ 10 V 30 V ±20V 720 pF @ 15 V - - 6-MicroFET (2x2) - 900mW (Ta) -55°C ~ 150°C (TJ)
R6018JNJGTL

R6018JNJGTL

MOSFET N-CH 600V 18A LPTS

Rohm Semiconductor

502 -
R6018JNJGTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Tc) 15V 286mOhm @ 9A, 15V Surface Mount 7V @ 4.2mA 42 nC @ 15 V 600 V ±30V 1300 pF @ 100 V - - LPTS - 220W (Tc) -55°C ~ 150°C (TJ)
IPL65R130C7AUMA1

IPL65R130C7AUMA1

MOSFET N-CH 650V 15A 4VSON

Infineon Technologies

3,088 -
IPL65R130C7AUMA1

数据表

CoolMOS™ C7 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 130mOhm @ 4.4A, 10V Surface Mount 4V @ 440µA 35 nC @ 10 V 650 V ±20V 1670 pF @ 400 V - - PG-VSON-4 - 102W (Tc) -40°C ~ 150°C (TJ)
NVMFS5C410NAFT1G

NVMFS5C410NAFT1G

MOSFET N-CH 40V 46A/300A 5DFN

onsemi

1,330 -
NVMFS5C410NAFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 46A (Ta), 300A (Tc) 10V 0.92mOhm @ 50A, 10V Surface Mount 3.5V @ 250µA 86 nC @ 10 V 40 V ±20V 6100 pF @ 25 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.9W (Ta), 166W (Tc) -55°C ~ 175°C (TJ)
R6520ENZ4C13

R6520ENZ4C13

650V 20A TO-247, LOW-NOISE POWER

Rohm Semiconductor

1,153 -
R6520ENZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 205mOhm @ 9.5A, 10V Through Hole 4V @ 630µA 61 nC @ 10 V 650 V ±20V 1400 pF @ 25 V - - TO-247G - 231W (Tc) 150°C (TJ)
IXFA10N60P-TRL

IXFA10N60P-TRL

MOSFET N-CH 600V 10A D2-PAK

Littelfuse Inc.

700 -
IXFA10N60P-TRL

数据表

HiPerFET™, Polar - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
STMFSC017N15M5

STMFSC017N15M5

MOSFET - POWERTRENCHN-CHANNEL, D

onsemi

5,565 -
STMFSC017N15M5

数据表

PowerTrench® 8-PowerVDFN Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 9.3A (Ta), 40A (Tc) 6V, 10V 17mOhm @ 9.3A, 10V Surface Mount 4V @ 250µA 42 nC @ 10 V 150 V ±20V 2955 pF @ 75 V - - 8-DFN (5x6.15) - 3.2W (Ta), 125W (Tc) -55°C ~ 150°C (TJ)
SIHH250N60EF-T1GE3

SIHH250N60EF-T1GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix

3,050 -
SIHH250N60EF-T1GE3

数据表

EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 250mOhm @ 5.5A, 10V Surface Mount 5V @ 250µA 23 nC @ 10 V 600 V ±30V 915 pF @ 100 V - - PowerPAK® 8 x 8 - 89W (Tc) -55°C ~ 150°C (TJ)
IPL65R115CFD7AUMA1

IPL65R115CFD7AUMA1

COOLMOS CFD7 SUPERJUNCTION MOSFE

Infineon Technologies

3,000 -
IPL65R115CFD7AUMA1

数据表

CoolMOS™ 4-PowerTSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V 115mOhm @ 9.7A, 10V Surface Mount 4.5V @ 480µA 41 nC @ 10 V 650 V ±20V 1942 pF @ 400 V - - PG-VSON-4 - 144W (Tc) -40°C ~ 150°C (TJ)
RSJ550N10TL

RSJ550N10TL

MOSFET N-CH 100V 55A LPTS

Rohm Semiconductor

886 -
RSJ550N10TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55A (Ta) 4V, 10V 16.8mOhm @ 27.5A, 10V Surface Mount 2.5V @ 1mA 143 nC @ 10 V 100 V ±20V 6150 pF @ 25 V - - LPTS - 100W (Tc) 150°C (TJ)
SPP20N65C3XKSA1

SPP20N65C3XKSA1

MOSFET N-CH 650V 20.7A TO220-3

Infineon Technologies

454 -
SPP20N65C3XKSA1

数据表

CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 20.7A (Tc) 10V 190mOhm @ 13.1A, 10V Through Hole 3.9V @ 1mA 114 nC @ 10 V 650 V ±20V 2400 pF @ 25 V - - PG-TO220-3 - 208W (Tc) -55°C ~ 150°C (TJ)
STD13NM60ND

STD13NM60ND

MOSFET N-CH 600V 11A DPAK

STMicroelectronics

9,424 -
STD13NM60ND

数据表

FDmesh™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 380mOhm @ 5.5A, 10V Surface Mount 5V @ 250µA 24.5 nC @ 10 V 600 V ±25V 845 pF @ 50 V - - DPAK - 109W (Tc) 150°C (TJ)
RCJ331N25TL

RCJ331N25TL

250V 33A, NCH, TO-263S, POWER MO

Rohm Semiconductor

1,990 -
RCJ331N25TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V 105mOhm @ 16.5A, 10V Surface Mount 5V @ 1mA 80 nC @ 10 V 250 V ±30V 4500 pF @ 25 V - - TO-263S - 1.56W (Ta), 211W (Tc) 150°C (TJ)
FCP099N65S3

FCP099N65S3

MOSFET N-CH 650V 30A TO220-3

onsemi

800 -
FCP099N65S3

数据表

SuperFET® III TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 99mOhm @ 15A, 10V Through Hole 4.5V @ 3mA 61 nC @ 10 V 650 V ±30V 2480 pF @ 400 V - - TO-220-3 - 227W (Tc) -55°C ~ 150°C (TJ)
STF13NM60ND

STF13NM60ND

MOSFET N-CH 600V 11A TO220FP

STMicroelectronics

662 -
STF13NM60ND

数据表

FDmesh™ II TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 380mOhm @ 5.5A, 10V Through Hole 5V @ 250µA 24.5 nC @ 10 V 600 V ±25V 845 pF @ 50 V - - TO-220FP - 25W (Tc) 150°C (TJ)
RCJ451N20TL

RCJ451N20TL

200V 45A, NCH, TO-263S, POWER MO

Rohm Semiconductor

986 -
RCJ451N20TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 55mOhm @ 22.5A, 10V Surface Mount 5V @ 1mA 80 nC @ 10 V 200 V ±30V 4200 pF @ 25 V - - TO-263S - 1.56W (Ta), 211W (Tc) 150°C (TJ)
IXFP10N80P

IXFP10N80P

MOSFET N-CH 800V 10A TO220AB

Littelfuse Inc.

240 -
IXFP10N80P

数据表

HiPerFET™, Polar TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 1.1Ohm @ 5A, 10V Through Hole 5.5V @ 2.5mA 40 nC @ 10 V 800 V ±30V 2050 pF @ 25 V - - TO-220-3 - 300W (Tc) -55°C ~ 150°C (TJ)
IPW65R125CFD7XKSA1

IPW65R125CFD7XKSA1

HIGH POWER_NEW

Infineon Technologies

235 -
IPW65R125CFD7XKSA1

数据表

CoolMOS™ CFD7 TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 125mOhm @ 8.5A, 10V Through Hole 4.5V @ 420µA 36 nC @ 10 V 650 V ±20V 1694 pF @ 400 V - - PG-TO247-3 - 98W (Tc) -55°C ~ 150°C (TJ)
STWA30N65DM6AG

STWA30N65DM6AG

MOSFET N-CH 650V 28A TO247

STMicroelectronics

600 -
STWA30N65DM6AG

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 110mOhm @ 14A, 10V Through Hole 4.75V @ 250µA 46 nC @ 10 V 650 V ±25V 2000 pF @ 100 V AEC-Q101 - TO-247 Long Leads Automotive 284W (Tc) -55°C ~ 150°C (TJ)
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