订单满￥1000免运费

富聪科技 | 全球电子元器件分销商

24小时咨询热线 0755 83957878

首页 > 产品 > 分立半导体产品 > 晶体管 > 场效应晶体管（FETs）、金属氧化物半导体场效应晶体管（MOSFETs） > 场效应晶体管（FETs）、MOSFETs

场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

全部重置

全部应用

结果

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
STD55NH2LLT4 MOSFET N-CH 24V 40A DPAK STMicroelectronics	5,005	-	询价单	数据表	STripFET™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	4.5V, 10V	11mOhm @ 20A, 10V	Surface Mount	1V @ 250µA	11 nC @ 4.5 V	24 V	±16V	990 pF @ 25 V	-	-	DPAK	-	60W (Tc)	-55°C ~ 175°C (TJ)
SI4890BDY-T1-GE3 MOSFET N-CH 30V 16A 8SO Vishay Siliconix	6,081	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	4.5V, 10V	12mOhm @ 10A, 10V	Surface Mount	2.6V @ 250µA	33 nC @ 10 V	30 V	±25V	1535 pF @ 15 V	-	-	8-SOIC	-	2.5W (Ta), 5.7W (Tc)	-55°C ~ 150°C (TJ)
RXH125N03TB1 MOSFET N-CH 30V 12.5A 8SOP Rohm Semiconductor	5,389	-	询价单	数据表	-	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	12.5A (Ta)	4V, 10V	12mOhm @ 12.5A, 10V	Surface Mount	2.5V @ 1mA	12.7 nC @ 5 V	30 V	±20V	1000 pF @ 10 V	-	-	8-SOP	-	2W (Ta)	150°C (TJ)
MCU120N04-TP Interface Micro Commercial Co	6,704	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	120A	4.5V, 10V	3.5mOhm @ 15A, 10V	Surface Mount	2.5V @ 250µA	102 nC @ 10 V	40 V	±20V	4645 pF @ 20 V	-	-	TO-252 (DPAK)	-	110W (Tj)	-55°C ~ 150°C
IRF5806 MOSFET P-CH 20V 4A MICRO6 Infineon Technologies	7,354	-	询价单	数据表	HEXFET®	SOT-23-6 Thin, TSOT-23-6	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	4A (Ta)	2.5V, 4.5V	86mOhm @ 4A, 4.5V	Surface Mount	1.2V @ 250µA	11.4 nC @ 4.5 V	20 V	±20V	594 pF @ 15 V	-	-	Micro6™(TSOP-6)	-	2W (Ta)	-55°C ~ 150°C (TJ)
XP10N011LM MOSFET N CH 100V 11A SO-8 YAGEO XSEMI	6,658	-	询价单	数据表	XP10N011L	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Ta)	5V, 10V	11mOhm @ 10A, 10V	Surface Mount	2.5V @ 250µA	44.8 nC @ 10 V	100 V	±20V	1920 pF @ 80 V	-	-	8-SO	-	2.5W (Ta)	-55°C ~ 150°C (TJ)
FQB5N60CTM MOSFET N-CH 600V 4.5A D2PAK onsemi	9,228	-	询价单	数据表	QFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.5A (Tc)	10V	2.5Ohm @ 2.25A, 10V	Surface Mount	4V @ 250µA	19 nC @ 10 V	600 V	±30V	670 pF @ 25 V	-	-	TO-263 (D2PAK)	-	3.13W (Ta), 100W (Tc)	-55°C ~ 150°C (TJ)
PMV40UN,215 MOSFET N-CH 30V 4.9A TO236AB NXP USA Inc.	8,166	-	询价单	数据表	TrenchMOS™	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	4.9A (Tc)	1.8V, 4.5V	47mOhm @ 2A, 4.5V	Surface Mount	700mV @ 1mA (Typ)	9.3 nC @ 4.5 V	30 V	±8V	445 pF @ 30 V	-	-	SOT-23 (TO-236AB)	-	1.9W (Tc)	-55°C ~ 150°C (TJ)
AO7415 MOSFET P-CH 20V 2A SC70-6 Alpha & Omega Semiconductor Inc.	3,146	-	询价单	数据表	-	6-TSSOP, SC-88, SOT-363	Tape & Reel (TR)	Not For New Designs	P-Channel	MOSFET (Metal Oxide)	2A (Ta)	2.5V, 10V	100mOhm @ 2A, 10V	Surface Mount	1.4V @ 250µA	6 nC @ 4.5 V	20 V	±12V	620 pF @ 10 V	-	-	SC-70-6	-	630mW (Ta)	-55°C ~ 150°C (TJ)
IRLML2402GTRPBF MOSFET N-CH 20V 1.2A SOT23-3 Infineon Technologies	5,232	-	询价单	数据表	HEXFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1.2A (Ta)	2.7V, 4.5V	250mOhm @ 930mA, 4.5V	Surface Mount	700mV @ 250µA (Min)	3.9 nC @ 4.5 V	20 V	±12V	110 pF @ 15 V	-	-	Micro3™/SOT-23	-	540mW (Ta)	-55°C ~ 150°C (TJ)
MSC040SMA120SDT/R MOSFET SIC 1200 V 40 MOHM TO-263 Microchip Technology	6,632	-	询价单	数据表	mSiC™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	68A (Tc)	18V, 20V	50mOhm @ 40A, 20V	Surface Mount	2.7V @ 2mA	137 nC @ 20 V	1200 V	+23V, -10V	1962 pF @ 1000 V	-	-	TO-268	-	338W (Tc)	-55°C ~ 175°C (TJ)
IRLML2803GTRPBF MOSFET N-CH 30V 1.2A SOT-23-3 Infineon Technologies	6,725	-	询价单	数据表	HEXFET®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1.2A (Ta)	4.5V, 10V	250mOhm @ 910mA, 10V	Surface Mount	1V @ 250µA	5 nC @ 10 V	30 V	±20V	85 pF @ 25 V	-	-	Micro3™/SOT-23	-	540mW (Ta)	-55°C ~ 150°C (TJ)
AO4724 MOSFET N-CH 30V 7.7A 8SOIC Alpha & Omega Semiconductor Inc.	7,928	-	询价单	数据表	SRFET™	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	7.7A (Ta)	4.5V, 10V	17.5mOhm @ 10.5A, 10V	Surface Mount	2V @ 250µA	16 nC @ 10 V	30 V	±20V	900 pF @ 15 V	-	Schottky Diode (Body)	8-SOIC	-	1.7W (Ta)	-55°C ~ 150°C (TJ)
MSC011SMB120D/S MOSFET SIC 1200 V 11 MOHM DIE Microchip Technology	6,768	-	询价单	数据表	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
DMN10H220L-13 MOSFET N-CH 100V 1.4A SOT23 Diodes Incorporated	9,466	-	询价单	数据表	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	1.4A (Ta)	4.5V, 10V	220mOhm @ 1.6A, 10V	Surface Mount	2.5V @ 250µA	8.3 nC @ 10 V	100 V	±16V	401 pF @ 25 V	-	-	SOT-23-3	-	1.3W (Ta)	-55°C ~ 150°C (TJ)
MSC060SMB120D/S MOSFET SIC 1200 V 60 MOHM DIE Microchip Technology	3,943	-	询价单	数据表	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSC040SMB120D/S MOSFET SIC 1200 V 40 MOHM DIE Microchip Technology	5,413	-	询价单	数据表	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSC025SMB120D/S MOSFET SIC 1200 V 25 MOHM DIE Microchip Technology	5,237	-	询价单	数据表	-	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
MSC080SMA330B4N MOSFET SIC 3300V 80 MOHM TO-247- Microchip Technology	7,947	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	41A (Tc)	20V	105mOhm @ 30A, 20V	Through Hole	2.97V @ 3mA	55 nC @ 20 V	3300 V	+23V, -10V	3462 pF @ 2.4 kV	-	-	TO-247-4	-	381W (Tc)	-55°C ~ 150°C (TJ)
IGLT65R055D2 GAN TRANSISTOR 650 V G5 Infineon Technologies Canada Inc.	6,023	-	询价单	数据表	CoolGaN™	16-PowerSOP Module	Tape & Reel (TR)	Active	N-Channel	GaNFET (Gallium Nitride)	31A (Tc)	-	-	Surface Mount	1.6V @ 2.6mA	6.6 nC @ 3 V	650 V	-10V	330 pF @ 400 V	-	-	PG-HDSOP-16-8	-	104W (Tc)	-55°C ~ 150°C (TJ)

共 36322 条记录«上一页 1... 86 87 88 899091 92 93...1817 下一页»

搜索

产品

电话

用户

[email protected]

0755 83957878