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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PSMN3R5-30LL,115

PSMN3R5-30LL,115

MOSFET N-CH 30V 40A 8DFN

NXP USA Inc.

2,131 -
PSMN3R5-30LL,115

数据表

- 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 3.6mOhm @ 10A, 10V Surface Mount 2.15V @ 1mA 37 nC @ 10 V 30 V ±20V 2061 pF @ 15 V - - 8-DFN3333 (3.3x3.3) - 71W (Tc) -55°C ~ 150°C (TJ)
TSM4ND65CI

TSM4ND65CI

MOSFET N-CH 650V 4A ITO220

Taiwan Semiconductor Corporation

1,845 -
TSM4ND65CI

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.6Ohm @ 1.2A, 10V Through Hole 3.8V @ 250µA 16.8 nC @ 10 V 650 V ±30V 596 pF @ 50 V - - ITO-220 - 41.6W (Tc) -55°C ~ 150°C (TJ)
AO3457

AO3457

MOSFET P-CH 30V 4.3A SOT23-3

Alpha & Omega Semiconductor Inc.

6,947 -
AO3457

数据表

- 3-SMD, SOT-23-3 Variant Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4.3A (Ta) 4.5V, 10V 48mOhm @ 4.3A, 10V Surface Mount 2.4V @ 250µA 20 nC @ 10 V 30 V ±20V 520 pF @ 15 V - - SOT-23-3 - 1.4W (Ta) -55°C ~ 150°C (TJ)
PSMN3R8-30LL,115

PSMN3R8-30LL,115

MOSFET N-CH 30V 40A 8DFN

NXP USA Inc.

6,906 -
PSMN3R8-30LL,115

数据表

- 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 3.7mOhm @ 10A, 10V Surface Mount 2.15V @ 1mA 38 nC @ 10 V 30 V ±20V 2085 pF @ 15 V - - 8-DFN3333 (3.3x3.3) - 69W (Tc) -55°C ~ 150°C (TJ)
FDP053N08B-F102

FDP053N08B-F102

MOSFET N-CH 80V 75A TO220-3

onsemi

1,520 -
FDP053N08B-F102

数据表

PowerTrench® TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 5.3mOhm @ 75A, 10V Through Hole 4.5V @ 250µA 85 nC @ 10 V 80 V ±20V 5960 pF @ 40 V - - TO-220-3 - 146W (Tc) -55°C ~ 175°C (TJ)
AO3485

AO3485

MOSFET P-CH 20V 4A SOT23-3

Alpha & Omega Semiconductor Inc.

7,225 -
AO3485

数据表

- 3-SMD, SOT-23-3 Variant Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 4A (Ta) 1.5V, 4.5V 41mOhm @ 4A, 4.5V Surface Mount 900mV @ 250µA 15 nC @ 4.5 V 20 V ±8V 751 pF @ 10 V - - SOT-23-3 - 1.5W (Ta) -55°C ~ 150°C (TJ)
PJMD900N60EC_L2_00001

PJMD900N60EC_L2_00001

600V SUPER JUNCTION MOSFET

Panjit International Inc.

5,835 -
PJMD900N60EC_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 900mOhm @ 2.3A, 10V Surface Mount 4V @ 250µA 8.8 nC @ 10 V 600 V ±30V 310 pF @ 400 V - - TO-252AA - 47.5W (Tc) -55°C ~ 150°C (TJ)
AUIRF2804L-313TRL

AUIRF2804L-313TRL

MOSFET N-CH 40V 195A TO262

Infineon Technologies

5,284 -
AUIRF2804L-313TRL

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 10V 2.3mOhm @ 75A, 10V Through Hole 4V @ 250µA 240 nC @ 10 V 40 V ±20V 6450 pF @ 25 V AEC-Q101 - TO-262-3 Automotive 300W (Tc) -55°C ~ 175°C (TJ)
PJMP990N65EC_T0_00001

PJMP990N65EC_T0_00001

650V SUPER JUNCTION MOSFET

Panjit International Inc.

2,000 -
PJMP990N65EC_T0_00001

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 4.7A (Tc) 10V 990mOhm @ 2A, 10V Through Hole 4V @ 250µA 9.7 nC @ 10 V 650 V ±30V 306 pF @ 400 V - - TO-220AB-L - 47.5W (Tc) -55°C ~ 150°C (TJ)
AUXYBFP3306

AUXYBFP3306

MOSFET N-CH 60V TO-247AC

Infineon Technologies

2,747 -
AUXYBFP3306

数据表

- - Tube Obsolete - - - - - - - - - - - - - - - - -
AUIRFSL4010-313TRL

AUIRFSL4010-313TRL

MOSFET N-CH 100V 180A TO262

Infineon Technologies

3,882 -
AUIRFSL4010-313TRL

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 4.7mOhm @ 106A, 10V Through Hole 4V @ 250µA 215 nC @ 10 V 100 V ±8V 9575 pF @ 50 V AEC-Q101 - TO-262-3 Automotive 375W (Tc) -55°C ~ 175°C (TJ)
PMPB12EPX

PMPB12EPX

MOSFET P-CH 30V 7.9A DFN2020MD-6

Nexperia USA Inc.

9,171 -
PMPB12EPX

数据表

TrenchMOS™ 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 7.9A (Ta) 4.5V, 10V 17.3mOhm @ 7.9A, 10V Surface Mount 2V @ 250µA 39.9 nC @ 10 V 30 V ±20V 227 pF @ 15 V - - DFN2020MD-6 - 1.7W (Ta), 13W (Tc) -55°C ~ 150°C (TJ)
CMS01P10T-HF

CMS01P10T-HF

MOSFET P-CH 100V 1.2A SOT23-3

Comchip Technology

8,207 -
CMS01P10T-HF

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.2A (Ta) 4.5V, 10V 650mOhm @ 1A, 10V Surface Mount 2.5V @ 250µA 9.3 nC @ 10 V 100 V ±20V 513 pF @ 15 V - - SOT-23-3 - 1W (Ta) -55°C ~ 150°C (TJ)
SCTWA35N65G2VAG

SCTWA35N65G2VAG

SICFET N-CH 650V 45A TO247

STMicroelectronics

3,522 -
SCTWA35N65G2VAG

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 45A (Tc) 18V, 20V 72mOhm @ 20A, 20V Through Hole 3.2V @ 1mA 73 nC @ 20 V 650 V +20V, -5V 1370 pF @ 400 V - - TO-247 Long Leads - 208W (Tc) -55°C ~ 175°C (TJ)
NVMFS4C03NT1G

NVMFS4C03NT1G

MOSFET N-CH 30V 31.4A/143A 5DFN

onsemi

1,350 -
NVMFS4C03NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 31.4A (Ta), 143A (Tc) 4.5V, 10V 2.1mOhm @ 30A, 10V Surface Mount 2.2V @ 250µA 45.2 nC @ 10 V 30 V ±20V 3071 pF @ 15 V AEC-Q101 - 5-DFN (5x6) (8-SOFL) Automotive 3.71W (Ta), 77W (Tc) -55°C ~ 175°C (TJ)
IRF8721TRPBF-1

IRF8721TRPBF-1

MOSFET N-CH 30V 14A 8SO

Infineon Technologies

6,992 -
IRF8721TRPBF-1

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 14A (Ta) 4.5V, 10V 8.5mOhm @ 14A, 10V Surface Mount 2.35V @ 25µA 12 nC @ 4.5 V 30 V ±20V 1040 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRF7456TRPBF-1

IRF7456TRPBF-1

MOSFET N-CH 20V 16A 8SO

Infineon Technologies

6,396 -
IRF7456TRPBF-1

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta) 2.8V, 10V 6.5mOhm @ 16A, 10V Surface Mount 2V @ 250µA 62 nC @ 5 V 20 V ±12V 3640 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRLML0100TRPBF-1

IRLML0100TRPBF-1

MOSFET N-CH 100V 1.6A SOT23

Infineon Technologies

9,001 -
IRLML0100TRPBF-1

数据表

HEXFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.6A (Ta) 4.5V, 10V 220mOhm @ 1.6A, 10V Surface Mount 2.5V @ 25µA 2.5 nC @ 4.5 V 100 V ±16V 290 pF @ 25 V - - Micro3™/SOT-23 - 1.3W (Ta) -55°C ~ 150°C (TJ)
IRFC4019EB

IRFC4019EB

MOSFET N-CH 150V 17A DIE

Infineon Technologies

7,819 -
IRFC4019EB

数据表

HEXFET® Die Bulk Obsolete N-Channel MOSFET (Metal Oxide) 17A - - Surface Mount - - 150 V - - - - Die - - -
IRF8113TRPBF-1

IRF8113TRPBF-1

MOSFET N-CH 30V 17.2A 8SO

Infineon Technologies

2,092 -
IRF8113TRPBF-1

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17.2A (Ta) 4.5V, 10V 5.6mOhm @ 17.2A, 10V Surface Mount 2.2V @ 250µA 36 nC @ 4.5 V 30 V ±20V 2910 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
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