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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SQ2337CES-T1_GE3

SQ2337CES-T1_GE3

MOSFET P-CH 80V 2.2A SOT23-3

Vishay Siliconix

5,274 -
SQ2337CES-T1_GE3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.2A (Tc) 6V, 10V 290mOhm @ 1.2A, 10V Surface Mount 2.5V @ 250µA 18 nC @ 40 V 80 V ±20V 620 pF @ 40 V AEC-Q101 - SOT-23-3 (TO-236) Automotive 3W (Tc) -55°C ~ 175°C (TJ)
SQJ166ELP-T1_GE3

SQJ166ELP-T1_GE3

MOSFET N-CH 50V 50A TO252AA

Vishay Siliconix

9,906 -
SQJ166ELP-T1_GE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 67A (Tc) 4.5V, 10V 9.7mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 29 nC @ 10 V 60 V ±20V 1903 pF @ 25 V AEC-Q101 - PowerPAK® SO-8 Automotive 89W (Tc) -55°C ~ 175°C (TJ)
SQS124ELNW-T1_GE3

SQS124ELNW-T1_GE3

MOSFET N-CH 30V 100A TO252AA

Vishay Siliconix

7,710 -
SQS124ELNW-T1_GE3

数据表

TrenchFET® Gen IV 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 107A (Tc) 4.5V, 10V 3mOhm @ 10A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 54 nC @ 10 V 30 V ±20V 2945 pF @ 25 V AEC-Q101 - PowerPAK® 1212-8SLW Automotive 79W (Tc) -55°C ~ 175°C (TJ)
SIS5712DN-T1-GE3

SIS5712DN-T1-GE3

MOSFET N-CH 150V 2.2A PPAK1212-8

Vishay Siliconix

6,831 -
SIS5712DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.6A (Ta), 18A (Tc) 7.5V, 10V 55.5mOhm @ 5.6A, 10V Surface Mount 4V @ 250µA 11.3 nC @ 10 V 150 V ±20V 500 pF @ 75 V - - PowerPAK® 1212-8 - 3.7W (Ta), 39.1W (Tc) -55°C ~ 150°C (TJ)
ISK018NE1LM7ATSA1

ISK018NE1LM7ATSA1

ISK018NE1LM7AULA1 MOSFET

Infineon Technologies

9,028 -
ISK018NE1LM7ATSA1

数据表

OptiMOS™ 7 6-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Ta), 129A (Tc) 4.5V, 7V 1.8mOhm @ 20A, 7V Surface Mount 2V @ 106µA 13.6 nC @ 7 V 15 V ±7V 1600 pF @ 7.5 V - - PG-VSON-6-1 - 2.1W (Ta), 39W (Tc) -55°C ~ 150°C (TJ)
ISK057N04LM6ATSA1

ISK057N04LM6ATSA1

MOSFET N-CH 40V 64A 6VSON

Infineon Technologies

6,645 -
ISK057N04LM6ATSA1

数据表

OptiMOS™ 6 6-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Ta), 64A (Tc) 4.5V, 10V 5.75mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 12 nC @ 10 V 40 V ±20V 870 pF @ 20 V - - PG-VSON-6-1 - 2.1W (Ta), 39.1W (Tc) -55°C ~ 150°C (TJ)
BSB044N08NN3GXUMA2

BSB044N08NN3GXUMA2

MOSFET N-CH 80V 18A/90A 2WDSON

Infineon Technologies

4,142 -
BSB044N08NN3GXUMA2

数据表

OptiMOS™ 3 DirectFET™ Isometric ST Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18A (Ta), 90A (Tc) 10V 4.4mOhm @ 30A, 10V Surface Mount 3.5V @ 97µA 73 nC @ 10 V 80 V ±20V 5700 pF @ 40 V - - MG-WDSON-2 - 2.2W (Ta), 78W (Tc) -40°C ~ 150°C (TJ)
BSF450NE7NH3XUMA2

BSF450NE7NH3XUMA2

MOSFET N-CH 75V 5A/15A 2WDSON

Infineon Technologies

6,776 -
BSF450NE7NH3XUMA2

数据表

OptiMOS™ 3 DirectFET™ Isometric ST Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Ta), 15A (Tc) 7V, 10V 45mOhm @ 8A, 10V Surface Mount 3.8V @ 8µA 6 nC @ 10 V 75 V ±20V 390 pF @ 37.5 V - - MG-WDSON-2 - 2.2W (Ta), 18W (Tc) -40°C ~ 150°C (TJ)
BSF134N10NJ3GXUMA2

BSF134N10NJ3GXUMA2

MOSFET N-CH 100V 9A/40A 2WDSON

Infineon Technologies

3,453 -
BSF134N10NJ3GXUMA2

数据表

OptiMOS™ DirectFET™ Isometric ST Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Ta), 40A (Tc) 6V, 10V 13.4mOhm @ 30A, 10V Surface Mount 3.5V @ 40µA 30 nC @ 10 V 100 V ±20V 2300 pF @ 50 V - - MG-WDSON-2 - 2.2W (Ta), 43W (Tc) -40°C ~ 150°C (TJ)
APT80GA90B2D40

APT80GA90B2D40

MOSFET N-CH 800V 34A T-MAX

Microchip Technology

2,937 -
APT80GA90B2D40

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
SIR5812DP-T1-RE3

SIR5812DP-T1-RE3

MOSFET N-CH 80V 30A PPAK SO-8

Vishay Siliconix

2,326 -
SIR5812DP-T1-RE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 45.3A (Tc) 7.5V, 10V 13.5mOhm @ 10A, 10V Surface Mount 4V @ 250µA 15 nC @ 10 V 80 V ±20V 775 pF @ 40 V - - PowerPAK® SO-8 - 4.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
MSC035SMA070SCT/R

MSC035SMA070SCT/R

MOSFET SIC 700 V 35 MOHM PSMT

Microchip Technology

8,820 -
MSC035SMA070SCT/R

数据表

mSiC™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 71A (Tc) 18V, 20V 44mOhm @ 30A, 20V Surface Mount 5V @ 2mA 93 nC @ 20 V 700 V +23V, -10V 1806 pF @ 700 V - - TO-268 - 276W (Tc) -55°C ~ 175°C (TJ)
MSC020SMB120D/S

MSC020SMB120D/S

MOSFET SIC 1200 V 20 MOHM DIE

Microchip Technology

3,121 -
MSC020SMB120D/S

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
MSC045SMB120D/S

MSC045SMB120D/S

MOSFET SIC 1200 V 45 MOHM DIE

Microchip Technology

3,148 -
MSC045SMB120D/S

数据表

- - Bulk Active - - - - - - - - - - - - - - - - -
MSC025SMA330B4N

MSC025SMA330B4N

MOSFET SIC 3300V 25 MOHM TO-247-

Microchip Technology

4,377 -
MSC025SMA330B4N

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 104A - - Through Hole - - 3300 V - - - - TO-247-4 - - -55°C ~ 150°C (TJ)
ZVN4306GVTC

ZVN4306GVTC

MOSFET N-CH 60V 2.1A SOT223

Diodes Incorporated

5,822 -
ZVN4306GVTC

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.1A (Ta) 5V, 10V 330mOhm @ 3A, 10V Surface Mount 3V @ 1mA - 60 V ±20V 350 pF @ 25 V - - SOT-223-3 - 3W (Ta) -55°C ~ 150°C (TJ)
ZVN4310GTC

ZVN4310GTC

MOSFET N-CH 100V 1.67A SOT223

Diodes Incorporated

6,705 -
ZVN4310GTC

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.67A (Ta) 5V, 10V 540mOhm @ 3.3A, 10V Surface Mount 3V @ 1mA - 100 V ±20V 350 pF @ 25 V - - SOT-223-3 - 3W (Ta) -55°C ~ 150°C (TJ)
AON6298

AON6298

MOSFET N-CH 100V 14.5A/46A 8DFN

Alpha & Omega Semiconductor Inc.

6,059 -
AON6298

数据表

- 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14.5A (Ta), 46A (Tc) 6V, 10V 16.5mOhm @ 20A, 10V Surface Mount 3.4V @ 250µA 23 nC @ 10 V 100 V ±20V 1307 pF @ 50 V - - 8-DFN (5x6) - 7.4W (Ta), 78W (Tc) -55°C ~ 150°C (TJ)
MSC025SMA120SCT/R

MSC025SMA120SCT/R

MOSFET SIC 1200 V 25 MOHM PSMT

Microchip Technology

2,441 -
MSC025SMA120SCT/R

数据表

mSiC™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 108A (Tc) 18V, 20V 31mOhm @ 40A, 20V Surface Mount 3V @ 3mA 232 nC @ 20 V 1200 V +23V, -10V 3633 pF @ 1000 V - - TO-268 - 524W (Tc) -55°C ~ 175°C (TJ)
MSC030SMB120D/S

MSC030SMB120D/S

MOSFET SIC 1200 V 30 MOHM DIE

Microchip Technology

5,073 -
MSC030SMB120D/S

数据表

- - Bulk Active - - - - - - - - - - - - - - - - -
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