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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
CD-MSCSM70XM19CTYZBNMG

CD-MSCSM70XM19CTYZBNMG

ST-MOSFET-SIC-SBD-6HPD

Microchip Technology

5,041 -
CD-MSCSM70XM19CTYZBNMG

数据表

- - Bulk Active - - - - - - - - - - - - - - - - -
NVMFS5C456NLWFET1G

NVMFS5C456NLWFET1G

MOSFET N-CH 40V 5DFN

onsemi

4,837 -
NVMFS5C456NLWFET1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Ta), 87A (Tc) 4.5V, 10V 3.7mOhm @ 20A, 10V Surface Mount, Wettable Flank 2V @ 50µA 18 nC @ 10 V 40 V ±20V 1600 pF @ 25 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.6W (Ta), 55W (Tc) -55°C ~ 175°C (TJ)
NVMFS5832NLWFT1G-UM

NVMFS5832NLWFT1G-UM

MOSFET N-CH 40V 21A 5DFN

onsemi

7,063 -
NVMFS5832NLWFT1G-UM

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21A (Ta) 4.5V, 10V 4.2mOhm @ 20A, 10V Surface Mount, Wettable Flank 2.4V @ 250µA 51 nC @ 10 V 40 V ±20V 2700 pF @ 25 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.7W (Ta) -55°C ~ 175°C (TJ)
NVTFS5826NLWFTWG-UM

NVTFS5826NLWFTWG-UM

MOSFET N-CH 60V 7.6A 8WDFN

onsemi

2,803 -
NVTFS5826NLWFTWG-UM

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.6A (Ta) 4.5V, 10V 24mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 16 nC @ 10 V 60 V ±20V 850 pF @ 25 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 3.2W (Ta) -55°C ~ 175°C (TJ)
AOD510

AOD510

MOSFET N-CH 30V 45A/70A TO252

Alpha & Omega Semiconductor Inc.

4,183 -
AOD510

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 45A (Ta), 70A (Tc) 4.5V, 10V 2.6mOhm @ 20A, 10V Surface Mount 2.2V @ 250µA 60 nC @ 10 V 30 V ±20V 2719 pF @ 15 V - - TO-252 (DPAK) - 7.5W (Ta), 60W (Tc) -55°C ~ 175°C (TJ)
APL602LG-1

APL602LG-1

MOSFET LINEAR 600 V 49 A TO-264

Microchip Technology

6,828 -
APL602LG-1

数据表

- TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 49A (Tc) 12V 125mOhm @ 24.5A, 12V Through Hole 4V @ 2.5mA - 600 V ±30V 9000 pF @ 25 V - - TO-264 (L) - 730W -55°C ~ 150°C (TJ)
CPH3448-TL-W

CPH3448-TL-W

MOSFET N-CH 30V 4A 3CPH

onsemi

7,188 -
CPH3448-TL-W

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4A (Ta) 1.8V, 4.5V 50mOhm @ 2A, 4.5V Surface Mount - 4.7 nC @ 4.5 V 30 V ±12V 430 pF @ 10 V - - 3-CPH - 1W (Ta) 150°C (TJ)
SIHFU024-GE3

SIHFU024-GE3

LOGIC MOSFET N-CHANNEL 60V

Vishay Siliconix

7,731 -
SIHFU024-GE3

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 100mOhm @ 8.4A, 10V Through Hole 4V @ 250µA 25 nC @ 10 V 60 V ±20V 640 pF @ 25 V - - TO-251AA - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
SL10N10A

SL10N10A

100V 1 N-CHANNEL 3.1W10ASOT-223-

Shenzhen Slkormicro Semicon Co., Ltd.

5,392 -
SL10N10A

数据表

- TO-261-4, TO-261AA Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 4.5V, 10V 95mOhm @ 10A, 10V Surface Mount 3V @ 250µA 26 nC @ 10 V 100 V ±20V 1070 pF @ 50 V - - SOT-223 - 3.1W (Tc) 150°C (TJ)
SQ2308FES-T1_GE3

SQ2308FES-T1_GE3

MOSFET N-CH 60V 2.3A SOT23

Vishay Siliconix

8,173 -
SQ2308FES-T1_GE3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.3A (Tc) 4.5V, 10V 150mOhm @ 2.3A, 10V Surface Mount 2.5V @ 250µA 5.3 nC @ 10 V 60 V ±20V 205 pF @ 30 V AEC-Q101 - SOT-23-3 (TO-236) Automotive 2W (Tc) -55°C ~ 175°C (TJ)
RP1A090ZPTR

RP1A090ZPTR

MOSFET P-CH 12V 9A MPT6

Rohm Semiconductor

3,395 -
RP1A090ZPTR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9A (Ta) 1.5V, 4.5V 12mOhm @ 9A, 4.5V Surface Mount 1V @ 1mA 59 nC @ 4.5 V 12 V ±10V 7400 pF @ 6 V - - MPT6 - 2W (Ta) 150°C (TJ)
SQ2319CES-T1_GE3

SQ2319CES-T1_GE3

MOSFET P-CH 40V 4.6A SOT23-3

Vishay Siliconix

7,670 -
SQ2319CES-T1_GE3

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.6A (Tc) 4.5V, 10V 75mOhm @ 3A, 10V Surface Mount 2.5V @ 250µA 16 nC @ 10 V 40 V ±20V 620 pF @ 20 V AEC-Q101 - SOT-23-3 (TO-236) Automotive 3W (Tc) -55°C ~ 175°C (TJ)
ZVN4306GTC

ZVN4306GTC

MOSFET N-CH 60V 2.1A SOT223

Diodes Incorporated

6,801 -
ZVN4306GTC

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.1A (Ta) 5V, 10V 330mOhm @ 3A, 10V Surface Mount 3V @ 1mA - 60 V ±20V 350 pF @ 25 V - - SOT-223-3 - 3W (Ta) -55°C ~ 150°C (TJ)
STP12NK80Z

STP12NK80Z

MOSFET N-CH 800V 10.5A TO220AB

STMicroelectronics

2,626 -
STP12NK80Z

数据表

SuperMESH™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 10.5A (Tc) 10V 750mOhm @ 5.25A, 10V Through Hole 4.5V @ 100µA 87 nC @ 10 V 800 V ±30V 2620 pF @ 25 V - - TO-220 - 190W (Tc) -55°C ~ 150°C (TJ)
NVB190N65S3F

NVB190N65S3F

MOSFET N-CH 650V 20A D2PAK-3

onsemi

622 -
NVB190N65S3F

数据表

SuperFET® III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 190mOhm @ 10A, 10V Surface Mount 5V @ 430µA 34 nC @ 10 V 650 V ±30V 1605 pF @ 400 V AEC-Q101 - TO-263 (D2PAK) Automotive 162W (Tc) -55°C ~ 150°C (TJ)
SIHB105N60EF-GE3

SIHB105N60EF-GE3

MOSFET N-CH 600V 29A D2PAK

Vishay Siliconix

5,591 -
SIHB105N60EF-GE3

数据表

EF TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 102mOhm @ 13A, 10V Surface Mount 5V @ 250µA 53 nC @ 10 V 600 V ±30V 1804 pF @ 100 V - - TO-263 (D2PAK) - 208W (Tc) -55°C ~ 150°C (TJ)
R6015ENXC7G

R6015ENXC7G

600V 15A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

1,000 -
R6015ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 290mOhm @ 6.5A, 10V Through Hole 4V @ 1mA 40 nC @ 10 V 600 V ±20V 910 pF @ 25 V - - TO-220FM - 60W (Tc) 150°C (TJ)
R6515ENXC7G

R6515ENXC7G

650V 15A TO-220FM, LOW-NOISE POW

Rohm Semiconductor

1,000 -
R6515ENXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 315mOhm @ 6.5A, 10V Through Hole 4V @ 430µA 40 nC @ 10 V 650 V ±20V 910 pF @ 25 V - - TO-220FM - 60W (Tc) 150°C (TJ)
SSM3J35FS,LF

SSM3J35FS,LF

SMALL LOW RON PCH MOSFETS VDSS:-

Toshiba Semiconductor and Storage

3,833 -
SSM3J35FS,LF

数据表

- SC-75, SOT-416 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 100mA (Ta) 1.2V, 4V 8Ohm @ 50mA, 4V Surface Mount 1V @ 1mA - 20 V ±10V 12.2 pF @ 3 V - - SSM - 100mW (Ta) 150°C
SSM3K121TU,LF

SSM3K121TU,LF

MOSFET N-CH 20V 3.2A ES6

Toshiba Semiconductor and Storage

2,154 -
SSM3K121TU,LF

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.2A (Ta) 1.5V, 4V 48mOhm @ 2A, 4V Surface Mount 1V @ 1mA 5.9 nC @ 4 V 20 V ±10V 400 pF @ 10 V - - UFM - 500mW (Ta) 150°C
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