Diotec Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 13

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
DI025N20PQ MOSFET N , 200V 25A 48mW Diotec Semiconductor	8,734	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	10V	48mOhm @ 20A, 10V	Surface Mount	4V @ 250µA	28 nC @ 10 V	200 V	±20V	1650 pF @ 100 V	AEC-Q101	-	8-QFN (5x6)	Automotive	135W (Tc)	-55°C ~ 150°C (TJ)
DI110N06D2 MOSFET, D2PAK, 60V, 110A, 150C, Diotec Semiconductor	5,287	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	110A (Tc)	10V	3.2mOhm @ 100A, 10V	Surface Mount	4V @ 250µA	75 nC @ 10 V	60 V	±20V	4597 pF @ 25 V	-	-	TO-263AB	-	62.5W (Tc)	-55°C ~ 150°C (TJ)
DIW065SIC080 SIC MOSFET, TO-247-3L, N, 36A, 6 Diotec Semiconductor	7,072	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	36A (Tc)	18V	80mOhm @ 15A, 18V	Through Hole	4V @ 5mA	75 nC @ 20 V	650 V	+18V, -5V	1480 pF @ 600 V	-	-	TO-247	-	175W (Tc)	-55°C ~ 175°C (TJ)
DIW065SIC049 SIC MOSFET, TO-247-3L, N, 60A, 6 Diotec Semiconductor	6,490	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	60A (Tc)	18V	49mOhm @ 30A, 18V	Through Hole	4V @ 10mA	128 nC @ 20 V	650 V	+18V, -5V	2612 pF @ 600 V	-	-	TO-247	-	550W (Tc)	-55°C ~ 175°C (TJ)
DIF120SIC053 SIC MOSFET, TO-247-4L, N, 65A, 1 Diotec Semiconductor	5,228	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	65A (Tc)	18V	53mOhm @ 33A, 18V	Through Hole	4V @ 9.5mA	121 nC @ 15 V	1200 V	+18V, -4V	2070 pF @ 1000 V	-	-	TO-247-4	-	278W (Tc)	-55°C ~ 175°C (TJ)
DIF065SIC030 SIC MOSFET, TO-247-4L, N, 105A, Diotec Semiconductor	2,722	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	105A (Tc)	18V	30mOhm @ 75A, 18V	Through Hole	4V @ 23.5mA	145 nC @ 18 V	650 V	+18V, -4V	3300 pF @ 600 V	-	-	TO-247-4	-	-	-55°C ~ 175°C (TJ)
DIW170SIC049 SIC MOSFET, TO-247-3L, N, 67A, 1 Diotec Semiconductor	6,892	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	67A (Tc)	18V	49mOhm @ 40A, 18V	Through Hole	4V @ 15mA	179 nC @ 18 V	1700 V	+18V, -4V	3046 pF @ 1000 V	-	-	TO-247	-	357W (Tc)	-55°C ~ 175°C (TJ)
DIW120SIC028 SIC MOSFET, TO-247-3L, N, 118A, Diotec Semiconductor	8,239	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	118A (Tc)	20V	28mOhm @ 80A, 20V	Through Hole	4V @ 25mA	373 nC @ 20 V	1200 V	+20V, -5V	5691 pF @ 1000 V	-	-	TO-247	-	715W (Tc)	-55°C ~ 175°C (TJ)
DIF120SIC022 SIC MOSFET, TO-247-4L, N, 120A, Diotec Semiconductor	3,354	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	120A (Tc)	18V	22.3mOhm @ 75A, 18V	Through Hole	4V @ 23.5mA	269 nC @ 18 V	1200 V	+18V, -4V	4817 pF @ 1000 V	-	-	TO-247-4	-	340W (Tc)	-55°C ~ 175°C (TJ)
DIF120SIC028 SIC MOSFET, TO-247-4L, N, 118A, Diotec Semiconductor	6,054	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	118A (Tc)	20V	28mOhm @ 80A, 20V	Through Hole	4V @ 25mA	373 nC @ 20 V	1200 V	+20V, -5V	5691 pF @ 1000 V	-	-	TO-247-4	-	715W (Tc)	-55°C ~ 175°C (TJ)

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