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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DI114N06PQMOSFET POWERQFN 5X6 N 65V Diotec Semiconductor |
4,566 | - |
|
数据表 |
- | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 114A (Tc) | 10V | 3mOhm @ 30A, 10V | Surface Mount | 3.5V @ 250µA | 78.5 nC @ 10 V | 65 V | ±20V | 4130 pF @ 30 V | - | - | 8-QFN (5x6) | - | 63.8W (Tc) | -55°C ~ 150°C (TJ) |
|
|
DI280N10TLMOSFET TOLL N 100V 0.002OHM 175C Diotec Semiconductor |
1,892 | - |
|
数据表 |
- | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 280A (Tc) | 10V | 2mOhm @ 50A, 10V | Surface Mount | 4.2V @ 250µA | 122 nC @ 10 V | 100 V | ±20V | 8150 pF @ 50 V | - | - | TOLL | - | 425mW (Tc) | -55°C ~ 175°C (TJ) |
|
DIT085N10MOSFET TO-220AB N 100V 85A Diotec Semiconductor |
7,375 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 85A (Tc) | 4.5V, 10V | 4.8mOhm @ 50A, 10V | Through Hole | 2.4V @ 250µA | 75 nC @ 10 V | 100 V | ±20V | 3742 pF @ 50 V | - | - | TO-220AB | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
DI050N06D1-QMOSFET, DPAK, N, 60V, 50A Diotec Semiconductor |
2,792 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 50A (Tc) | 4.5V, 10V | 11mOhm @ 10A, 10V | Surface Mount | 2.5V @ 250µA | 14 nC @ 10 V | 65 V | ±20V | 825 pF @ 30 V | - | - | TO-252-3, DPak | - | 42W (Tc) | -55°C ~ 150°C (TJ) |
|
|
DIW170SIC070SIC MOSFET, TO-247-3L, N, 70A, 1 Diotec Semiconductor |
150 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 70A (Tc) | 20V | 22.3mOhm @ 40A, 20V | Through Hole | 4V @ 10mA | 80 nC @ 18 V | 1700 V | +20V, -5V | 6000 pF @ 1200 V | - | - | TO-247 | - | 416W (Tc) | -55°C ~ 150°C (TJ) |
|
|
DIT080N08-AQMOSFET TO-220AB N 80V 80A Diotec Semiconductor |
4,850 | - |
|
数据表 |
- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 4.5V, 10V | 4.8mOhm @ 50A, 10V | Through Hole | 2.4V @ 250µA | 75 nC @ 10 V | 85 V | ±20V | 3742 pF @ 50 V | AEC-Q101 | - | TO-220AB | Automotive | 62.5W (Tc) | -55°C ~ 150°C (TJ) |
|
|
DIF120SIC053-AQMOSFET TO-247-4L N 65A 1200V Diotec Semiconductor |
433 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 65A (Tc) | 18V | 53mOhm @ 33A, 18V | Through Hole | 4V @ 9.5mA | 121 nC @ 15 V | 1200 V | - | 2070 pF @ 1000 V | AEC-Q101 | - | TO-247-4 | Automotive | 278W (Tc) | -55°C ~ 175°C (TJ) |
|
|
DIW120SIC059-AQMOSFET TO-247-3L N 65A 1200V Diotec Semiconductor |
430 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 65A (Tc) | 18V | 53mOhm @ 33A, 18V | Through Hole | 4V @ 9.5mA | 121 nC @ 15 V | 1200 V | - | 2070 pF @ 1000 V | AEC-Q101 | - | TO-247 | Automotive | 278W (Tc) | -55°C ~ 175°C (TJ) |
|
|
DIW120SIC022-AQSIC MOSFET, TO-247-3L, N, 120A, Diotec Semiconductor |
150 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 120A (Tc) | 18V | 22.3mOhm @ 75A, 18V | Through Hole | 4V @ 23.5mA | 269 nC @ 18 V | 1200 V | +18V, -4V | 4817 pF @ 1000 V | AEC-Q101 | - | TO-247 | Automotive | 340W (Tc) | -55°C ~ 175°C (TJ) |
|
|
DIF120SIC022-AQSIC MOSFET, TO-247-4L, N, 120A, Diotec Semiconductor |
150 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 120A (Tc) | 18V | 22.3mOhm @ 75A, 18V | Through Hole | 4V @ 23.5mA | 269 nC @ 18 V | 1200 V | +18V, -4V | 4817 pF @ 1000 V | AEC-Q101 | - | TO-247-4 | Automotive | 340W (Tc) | -55°C ~ 175°C (TJ) |
