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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
CDMSJ2204.7-650 SL

CDMSJ2204.7-650 SL

SUPER JUNCTION MOSFETS

Central Semiconductor Corp

500 -
CDMSJ2204.7-650 SL

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 4.7A (Tc) 10V 990mOhm @ 2A, 10V Through Hole 4V @ 250µA 9.7 nC @ 10 V 650 V 30V 306 pF @ 400 V - - TO-220FP - 22.5W (Tc) -55°C ~ 150°C (TJ)
CDMSJ2207.3-650 SL

CDMSJ2207.3-650 SL

SUPER JUNCTION MOSFETS

Central Semiconductor Corp

500 -
CDMSJ2207.3-650 SL

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 650 V 30V 554 pF @ 400 V - - TO-220FP - 32W (Tc) -55°C ~ 150°C (TJ)
CDMSJ22010-650 SL

CDMSJ22010-650 SL

SUPER JUNCTION MOSFETS

Central Semiconductor Corp

500 -
CDMSJ22010-650 SL

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 390mOhm @ 5A, 10V Through Hole 4V @ 250µA 19 nC @ 10 V 650 V 30V 726 pF @ 400 V - - TO-220FP - 29.5W (Tc) -55°C ~ 150°C (TJ)
CZDM1003N TR

CZDM1003N TR

MOSFET N-CH 100V 3A SOT-223

Central Semiconductor Corp

8,611 -
CZDM1003N TR

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 150mOhm @ 2A, 10V Surface Mount 4V @ 250µA 15 nC @ 10 V 100 V 20V 975 pF @ 25 V - - SOT-223 - 2W (Ta) -55°C ~ 150°C (TJ)
CDMSJ22013.8-650 SL

CDMSJ22013.8-650 SL

SUPER JUNCTION MOSFETS

Central Semiconductor Corp

493 -
CDMSJ22013.8-650 SL

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 13.8A (Tc) 10V 280mOhm @ 4.4A, 10V Through Hole 4V @ 250µA 30 nC @ 10 V 650 V 30V 1040 pF @ 400 V - - TO-220FP - 35.7W (Tc) -55°C ~ 150°C (TJ)
CDF56G6511N TR13 PBFREE

CDF56G6511N TR13 PBFREE

650V, 11A, N-CHANNEL GAN FET IN

Central Semiconductor Corp

2,325 -
CDF56G6511N TR13 PBFREE

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 11.5A (Tc) 6V 190mOhm @ 3.9A, 6V Surface Mount, Wettable Flank 2.5V @ 12.2mA 2.8 nC @ 6 V 650 V +7V, -1.4V 96 pF @ 400 V - - 8-DFN (5x6) - 1.1W (Ta), 84W (Tc) -55°C ~ 150°C (TJ)
CDM2208-800FP SL PBFREE

CDM2208-800FP SL PBFREE

MOSFET N-CH 800V 8A TO220FP

Central Semiconductor Corp

7,007 -
CDM2208-800FP SL PBFREE

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 1.6Ohm @ 4A, 10V Through Hole 4V @ 250µA 24.45 nC @ 10 V 800 V 30V 1110 pF @ 25 V - - TO-220FP - 57W (Tc) -55°C ~ 150°C (TJ)
CDMSJ22029-650 SL

CDMSJ22029-650 SL

SUPER JUNCTION MOSFETS

Central Semiconductor Corp

497 -
CDMSJ22029-650 SL

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 29A (Tc) 10V 130mOhm @ 10.8A, 10V Through Hole 4V @ 250µA 51 nC @ 10 V 650 V 30V 1920 pF @ 400 V - - TO-220FP - 33W (Tc) -55°C ~ 150°C (TJ)
CCSPG1060N TR PBFREE

CCSPG1060N TR PBFREE

100V, 60A, N-CHANNEL CHIP SCALE

Central Semiconductor Corp

1,442 -
CCSPG1060N TR PBFREE

数据表

* 8-XFLGA, CSP Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 60A (Tc) 5V 5.5mOhm @ 25A, 5V Surface Mount 2.5V @ 9mA 9.2 nC @ 5 V 100 V +6V, -4V 1000 pF @ 50 V - - 8-CSP (3.5x2.13) - 300W (Tc) -40°C ~ 150°C (TJ)
CDF56G6517N TR13 PBFREE

CDF56G6517N TR13 PBFREE

650V, 17A, N-CHANNEL GAN FET IN

Central Semiconductor Corp

2,498 -
CDF56G6517N TR13 PBFREE

数据表

* 8-PowerVDFN Tape & Reel (TR) Active N-Channel - 17A (Tc) - - Surface Mount, Wettable Flank - - 650 V - - - - 8-DFN (5x6) - 1.1W (Ta) -
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