IXYS|场效应晶体管（FETs）、MOSFETs - 页 36

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IXFR24N50 MOSFET N-CH 500V 24A ISOPLUS247 IXYS	5,985	-	询价单	数据表	HiPerFET™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	230mOhm @ 12A, 10V	Through Hole	4V @ 4mA	160 nC @ 10 V	500 V	±20V	4200 pF @ 25 V	-	-	ISOPLUS247™	-	250W (Tc)	-55°C ~ 150°C (TJ)
IRFP470 MOSFET N-CH 500V 24A TO247AD IXYS	5,790	-	询价单	数据表	MegaMOS™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	230mOhm @ 12A, 10V	Through Hole	4V @ 250µA	190 nC @ 10 V	500 V	±20V	4200 pF @ 25 V	-	-	TO-247AD	-	300W (Tc)	-55°C ~ 150°C (TJ)
IXTR90P10P MOSFET P-CH 100V 57A ISOPLUS247 IXYS	4,832	-	询价单	数据表	PolarP™	TO-247-3	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	57A (Tc)	10V	27mOhm @ 45A, 10V	Through Hole	4V @ 250µA	120 nC @ 10 V	100 V	±20V	5800 pF @ 25 V	-	-	ISOPLUS247™	-	190W (Tc)	-55°C ~ 150°C (TJ)
IXFT6N100Q MOSFET N-CH 1000V 6A TO268 IXYS	8,336	-	询价单	数据表	HiPerFET™	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	6A (Tc)	10V	1.9Ohm @ 3A, 10V	Surface Mount	4.5V @ 2.5mA	48 nC @ 10 V	1000 V	±20V	2200 pF @ 25 V	-	-	TO-268AA	-	180W (Tc)	-55°C ~ 150°C (TJ)
IXTF200N10T MOSFET N-CH 100V 90A I4PAC IXYS	8,912	-	询价单	数据表	Trench	i4-Pac™-5	Tube	Active	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	10V	7mOhm @ 50A, 10V	Through Hole	4.5V @ 250µA	152 nC @ 10 V	100 V	±30V	9400 pF @ 25 V	-	-	ISOPLUS i4-PAC™	-	156W (Tc)	-55°C ~ 175°C (TJ)
IXFA4N100Q-TRL MOSFET N-CH 1000V 4A TO263 IXYS	2,879	-	询价单	数据表	HiPerFET™, Q Class	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	4A (Tc)	10V	3Ohm @ 2A, 10V	Surface Mount	4.5V @ 1.5mA	39 nC @ 10 V	1000 V	±20V	1050 pF @ 25 V	-	-	TO-263AA (IXFA)	-	150W (Tc)	-55°C ~ 150°C (TJ)
IXTH32N65X MOSFET N-CH 650V 32A TO247 IXYS	7,496	-	询价单	数据表	Ultra X	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	32A (Tc)	10V	135mOhm @ 16A, 10V	Through Hole	5.5V @ 250µA	54 nC @ 10 V	650 V	±30V	2205 pF @ 25 V	-	-	TO-247 (IXTH)	-	500W (Tc)	-55°C ~ 150°C (TJ)
IXFH15N60 MOSFET N-CH 600V 15A TO-247AD IXYS	5,313	-	询价单	数据表	HiPerFET™	TO-247-3	Tube	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	500mOhm @ 500mA, 10V	Through Hole	4.5V @ 4mA	170 nC @ 10 V	600 V	±20V	4500 pF @ 25 V	-	-	TO-247AD (IXFH)	-	300W (Tc)	-55°C ~ 150°C (TJ)
LSIC1MO120T0160-TU 1200V/160MOHM SIC MOSFET TO-263- IXYS	9,902	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	22A (Tc)	-	-	Surface Mount	-	-	1200 V	-	-	-	-	TO-263-7	-	-	-
IXFR26N50Q MOSFET N-CH 500V 24A ISOPLUS247 IXYS	5,577	-	询价单	数据表	HiPerFET™	TO-247-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	200mOhm @ 13A, 10V	Through Hole	4.5V @ 4mA	95 nC @ 10 V	500 V	±20V	3900 pF @ 25 V	-	-	ISOPLUS247™	-	250W (Tc)	-55°C ~ 150°C (TJ)

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