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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IXTP20N65X

IXTP20N65X

MOSFET N-CH 650V 20A TO220

IXYS

6,405 -
IXTP20N65X

数据表

Ultra X TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 210mOhm @ 10A, 10V Through Hole 5.5V @ 250µA 35 nC @ 10 V 650 V ±30V 1390 pF @ 25 V - - TO-220-3 - 320W (Tc) -55°C ~ 150°C (TJ)
IXTQ32N65X

IXTQ32N65X

MOSFET N-CH 650V 32A TO3P

IXYS

5,790 -
IXTQ32N65X

数据表

Ultra X TO-3P-3, SC-65-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 135mOhm @ 16A, 10V Through Hole 5.5V @ 250µA 54 nC @ 10 V 650 V ±30V 2205 pF @ 25 V - - TO-3P - 500W (Tc) -55°C ~ 150°C (TJ)
IXTH60N25

IXTH60N25

MOSFET N-CH 250V 60A TO247

IXYS

7,548 -
IXTH60N25

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 46mOhm @ 15A, 10V Through Hole 4V @ 250µA 164 nC @ 10 V 250 V ±20V 4400 pF @ 25 V - - TO-247 (IXTH) - 400W (Tc) -55°C ~ 150°C (TJ)
IXFC60N20

IXFC60N20

MOSFET N-CH 200V 60A ISOPLUS220

IXYS

3,204 -
IXFC60N20

数据表

HiPerFET™ ISOPLUS220™ Tube Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 10V 33mOhm @ 30A, 10V Through Hole 4V @ 4mA 155 nC @ 10 V 200 V ±20V 5200 pF @ 25 V - - ISOPLUS220™ - 230W (Tc) -55°C ~ 150°C (TJ)
IXFH76N07-11

IXFH76N07-11

MOSFET N-CH 70V 76A TO247AD

IXYS

6,911 -
IXFH76N07-11

数据表

HiPerFET™ TO-247-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 76A (Tc) 10V 11mOhm @ 40A, 10V Through Hole 3.4V @ 4mA 240 nC @ 10 V 70 V ±20V 4400 pF @ 25 V - - TO-247AD (IXFH) - 360W (Tc) -55°C ~ 175°C (TJ)
IXFT18N90P

IXFT18N90P

MOSFET N-CH 900V 18A TO268

IXYS

7,611 -
IXFT18N90P

数据表

HiPerFET™, Polar TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 600mOhm @ 500mA, 10V Surface Mount 6.5V @ 1mA 97 nC @ 10 V 900 V ±30V 5230 pF @ 25 V - - TO-268AA - 540W (Tc) -55°C ~ 150°C (TJ)
IXFA270N06T3

IXFA270N06T3

MOSFET N-CH 60V 270A TO263AA

IXYS

5,613 -
IXFA270N06T3

数据表

HiperFET™, TrenchT3™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 270A (Tc) 10V 3.1mOhm @ 100A, 10V Surface Mount 4V @ 250µA 200 nC @ 10 V 60 V ±20V 12600 pF @ 25 V - - TO-263AA - 480W (Tc) -55°C ~ 175°C (TJ)
IXFK150N15P

IXFK150N15P

MOSFET N-CH 150V 150A TO264AA

IXYS

2,498 -
IXFK150N15P

数据表

HiPerFET™, Polar TO-264-3, TO-264AA Box Obsolete N-Channel MOSFET (Metal Oxide) 150A (Tc) 10V 13mOhm @ 500mA, 10V Through Hole 5V @ 4mA 190 nC @ 10 V 150 V ±20V 5800 pF @ 25 V - - TO-264AA (IXFK) - 714W (Tc) -55°C ~ 175°C (TJ)
IXTH6N80A

IXTH6N80A

MOSFET N-CH 800V 6A TO247

IXYS

7,591 -
IXTH6N80A

数据表

- TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 1.4Ohm @ 3A, 10V Through Hole 4.5V @ 250µA 130 nC @ 10 V 800 V ±20V 2800 pF @ 25 V - - TO-247 (IXTH) - 180W (Tc) -55°C ~ 150°C (TJ)
IXFT26N50

IXFT26N50

MOSFET N-CH 500V 26A TO268

IXYS

3,679 -
IXFT26N50

数据表

HiPerFET™ TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 26A (Tc) 10V 200mOhm @ 13A, 10V Surface Mount 4V @ 4mA 160 nC @ 10 V 500 V ±20V 4200 pF @ 25 V - - TO-268AA - 300W (Tc) -55°C ~ 150°C (TJ)
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