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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
XP4459YT

XP4459YT

MOSFET P-CH 30V 12.7A PMPAK

YAGEO XSEMI

995 -
XP4459YT

数据表

XP4459 8-PowerDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12.7A (Ta) 4.5V, 10V 13.5mOhm @ 10A, 10V Surface Mount 3V @ 250µA 64 nC @ 10 V 30 V ±20V 3360 pF @ 15 V - - PMPAK® 3 x 3 - 3.13W (Ta) -55°C ~ 150°C (TJ)
XP3P050AM

XP3P050AM

MOSFET P-CH 30V 5.8A 8SO

YAGEO XSEMI

994 -
XP3P050AM

数据表

XP3P050A 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5.8A (Ta) 4.5V, 10V 50mOhm @ 5A, 10V Surface Mount 3V @ 250µA 10.7 nC @ 4.5 V 30 V ±20V 960 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
XP9565GEM

XP9565GEM

MOSFET P-CH 40V 6.5A 8SO

YAGEO XSEMI

1,000 -
XP9565GEM

数据表

XP9565 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6.5A (Ta) 4.5V, 10V 38mOhm @ 6A, 10V Surface Mount 2.5V @ 250µA 20 nC @ 4.5 V 40 V ±16V 1570 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
XP10TN028YT

XP10TN028YT

MOSFET N-CH 100V 7.5A PMPAK

YAGEO XSEMI

998 -
XP10TN028YT

数据表

XP10TN028 8-PowerDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.5A (Ta) 5V, 10V 28mOhm @ 7A, 10V Surface Mount 3V @ 250µA 23 nC @ 4.5 V 100 V ±20V 2160 pF @ 50 V - - PMPAK® 3 x 3 - 3.125W (Ta) -55°C ~ 150°C (TJ)
XP3NA3R4MT

XP3NA3R4MT

MOSFET N-CH 30V 29.2A 73A PMPAK

YAGEO XSEMI

1,000 -
XP3NA3R4MT

数据表

XP3NA3R4 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 29.2A (Ta), 73A (Tc) 4.5V, 10V 3.4mOhm @ 19A, 10V Surface Mount 2.3V @ 250µA 36.8 nC @ 4.5 V 30 V ±20V 3360 pF @ 15 V - - PMPAK® 5 x 6 - 5W (Ta), 31.25W (Tc) -55°C ~ 150°C (TJ)
XP4438GYT

XP4438GYT

MOSFET N CH 30V 13.7A PMPAK3X3

YAGEO XSEMI

4,655 -
XP4438GYT

数据表

XP4438 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13.7A (Ta) 4.5V, 10V 12mOhm @ 11A, 10V Surface Mount 3V @ 250µA 16 nC @ 4.5 V 30 V ±20V 1760 pF @ 15 V - - 8-PMPAK (3x3) - 3.57W (Ta) -55°C ~ 150°C (TJ)
XP10P135YT

XP10P135YT

MOSFET P CH -100V -3.4A PMPAK3X

YAGEO XSEMI

8,008 -
XP10P135YT

数据表

XP10P135 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.4A (Ta), 9.5A (Tc) 4.5V, 10V 135mOhm @ 3A, 10V Surface Mount 3V @ 250µA 46.4 nC @ 10 V 100 V ±20V 2600 pF @ 50 V - - 8-PMPAK (3x3) - 3.13W (Ta) -55°C ~ 150°C (TJ)
XP3N9R5MT

XP3N9R5MT

MOSFET N CH 30V 17.7A PMPAK5X

YAGEO XSEMI

6,846 -
XP3N9R5MT

数据表

XP3N9R5 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17.7A (Ta), 37.8A (Tc) 4.5V, 10V 9.5mOhm @ 9.5A, 10V Surface Mount 2.3V @ 250µA 38.4 nC @ 10 V 30 V ±20V 1600 pF @ 15 V - - 8-PMPAK (5x6) - 5W (Ta), 22.7W (Tc) -55°C ~ 150°C (TJ)
XP3P010H

XP3P010H

MOSFET P CH -30V 18.5A TO-252

YAGEO XSEMI

2,140 -
XP3P010H

数据表

XP3P010 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active P-Channel MOSFET (Metal Oxide) 58A (Tc) 4.5V, 10V 10mOhm @ 30A, 10V Surface Mount 3V @ 250µA 57.6 nC @ 4.5 V 30 V ±20V 5840 pF @ 25 V - - TO-252 - 2W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
XP6P025H

XP6P025H

MOSFET P CH -60V 40A TO-252

YAGEO XSEMI

6,871 -
XP6P025H

数据表

XP6P025 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 25mOhm @ 20A, 10V Surface Mount 3V @ 250µA 59.2 nC @ 4.5 V 60 V ±20V 6400 pF @ 25 V - - TO-252 - 2W (Ta), 62.5W (Tc) -55°C ~ 150°C (TJ)
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