富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
E4M0025075K1

E4M0025075K1

MOSFETS AUTOMOTIVE 262W 3.8V NC

Wolfspeed, Inc.

286 -
E4M0025075K1

数据表

E TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 80A (Tc) 15V 34mOhm @ 33.5A, 15V Through Hole 3.8V @ 9.22mA 119 nC @ 15 V 750 V +19V, -8V 3055 pF @ 500 V AEC-Q101 - TO-247-4L Automotive 262W (Tc) -55°C ~ 175°C (TJ)
C3M0021120K1

C3M0021120K1

MOSFET N-CH 1200V 104A TO247-4L

Wolfspeed, Inc.

869 -
C3M0021120K1

数据表

- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 104A (Tc) 15V 29mOhm @ 62.1A, 15V Through Hole 3.8V @ 17.1mA 177 nC @ 15 V 1200 V +19V, -8V 5100 pF @ 1000 V - - TO-247-4L - 405W (Tc) -55°C ~ 175°C (TJ)
E3M0032120J2-TR

E3M0032120J2-TR

32m, 1200V SiC FET, TO-263-7 XL

Wolfspeed, Inc.

729 -
E3M0032120J2-TR

数据表

E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 74A (Tc) 15V 43mOhm @ 38.9A, 15V Surface Mount 3.8V @ 10.7mA 108 nC @ 15 V 1200 V +19V, -8V 3460 pF @ 1000 V AEC-Q101 - TO-263-7 Automotive 341W (Tc) -55°C ~ 175°C (TJ)
C3M0025065J1-TR

C3M0025065J1-TR

SIC, MOSFET 25 M, 650V TO-263-7X

Wolfspeed, Inc.

780 -
C3M0025065J1-TR

数据表

C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 80A (Tc) 15V 34mOhm @ 33.5A, 15V Surface Mount 3.6V @ 9.22mA 109 nC @ 15 V 650 V +19V, -8V 2980 pF @ 400 V - - TO-263-7 - 271W (Tc) -40°C ~ 150°C (TJ)
E3M0021120J2-TR

E3M0021120J2-TR

21m, 1200V SiC FET, TO-263-7 XL

Wolfspeed, Inc.

488 -
E3M0021120J2-TR

数据表

E TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 114A (Tc) 15V 29mOhm @ 62.12A, 15V Surface Mount 3.8V @ 17.1mA 169 nC @ 15 V 1200 V +19V, -8V 5100 pF @ 1000 V AEC-Q101 - TO-263-7 Automotive 500W (Tc) -55°C ~ 175°C (TJ)
C3M0016120K1

C3M0016120K1

MOSFET N-CH 1200V 125A TO247-4L

Wolfspeed, Inc.

325 -
C3M0016120K1

数据表

- TO-247-4 Bulk Active N-Channel SiCFET (Silicon Carbide) 125A (Tc) 15V 22mOhm @ 80.28A, 15V Through Hole 3.8V @ 22.08mA 223 nC @ 15 V 1200 V +19V, -8V 6922 pF @ 1000 V - - TO-247-4L - 483W (Tc) -55°C ~ 175°C (TJ)
C3M0120065J

C3M0120065J

650V 120M SIC MOSFET

Wolfspeed, Inc.

1,396 -
C3M0120065J

数据表

C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tube Last Time Buy N-Channel SiCFET (Silicon Carbide) 21A (Tc) 15V 157mOhm @ 6.76A, 15V Surface Mount 3.6V @ 1.86mA 26 nC @ 15 V 650 V +19V, -8V 640 pF @ 400 V - - TO-263-7 - 86W (Tc) -40°C ~ 175°C (TJ)
C3M0160120D

C3M0160120D

SICFET N-CH 1200V 17A TO247-3

Wolfspeed, Inc.

1,657 -
C3M0160120D

数据表

C3M™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 17A (Tc) 15V 208mOhm @ 8.5A, 15V Through Hole 3.6V @ 2.33mA 38 nC @ 15 V 1200 V +15V, -4V 632 pF @ 1000 V - - TO-247-3 - 97W (Tc) -55°C ~ 150°C (TJ)
C3M0120100K

C3M0120100K

SICFET N-CH 1000V 22A TO247-4L

Wolfspeed, Inc.

2,476 -
C3M0120100K

数据表

C3M™ TO-247-4 Tube Last Time Buy N-Channel SiCFET (Silicon Carbide) 22A (Tc) 15V 155mOhm @ 15A, 15V Through Hole 3.5V @ 3mA 21.5 nC @ 15 V 1000 V ±15V 350 pF @ 600 V - - TO-247-4L - 83W (Tc) -55°C ~ 150°C (TJ)
C3M0120090J-TR

C3M0120090J-TR

SICFET N-CH 900V 22A D2PAK-7

Wolfspeed, Inc.

1,756 -
C3M0120090J-TR

数据表

C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Last Time Buy N-Channel SiCFET (Silicon Carbide) 22A (Tc) 15V 155mOhm @ 15A, 15V Surface Mount 3.5V @ 3mA 17.3 nC @ 15 V 900 V +18V, -8V 350 pF @ 600 V - - TO-263-7 - 83W (Tc) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户